Abstract: An output driver (12), including: a first supply rail (13A) configured to receive a high supply electrical voltage (Vdd); a second supply rail (13B) configured to receive a low supply electrical voltage (Vss); a pad terminal (15) configured to output an output electrical voltage (V_pad_out); an output stage (14) connected to the pad terminal (15) and to the first and second supply rails (13A, 13B). The output stage (14) has an electrical clamping circuit (18A, 18B) including a semiconductor electronic switching component (Q3, Q6) made of a first type of semiconductors and a semiconductor electronic switching component (Q4, Q7) made of a second type of semiconductors. A resistor (R3, R0) is connected between the first or second supply rail and the semiconductor electronic switching component (Q3, Q6) of the first type, at an intermediate terminal (20, 24).

Abstract: According to an aspect of the disclosure a ring-oscillator control circuit includes a voltage reference, a ring oscillator, a power supply and a supply controller. The supply controller may be configured to select the power supply among an energy storage and an energy source such as to supply the ring oscillator in function of the voltage reference.

Abstract: A ring-oscillator control circuit (100) including voltage reference (110), a ring oscillator (120), a power supply (130, 140) and a supply controller (150). The supply controller (150) is configured to select the power supply (130, 140) among an energy storage (130) and an energy source (140) such as to supply the ring oscillator (120) in function of the voltage reference (110).

Abstract: An apparatus includes a sense module configured to be coupled to at least one power supply, where the sense module has a first leg. The apparatus also includes a replica module having a second leg, where the first and second legs have a common structure. The apparatus further includes a feedback loop configured to cause an output voltage across terminals of the replica module to at least substantially equal an input voltage across terminals of the sense module based on sense currents in the first and second legs. At least one cascode stage coupled to the sense module can be configured to reduce a voltage at which one or more signals from the sense module are referenced. One or more trim units can be used to reduce a gain error and/or an offset error between the input voltage and the output voltage.

Abstract: Capacitive liquid level measurement uses differential out-of-phase (OoP) channel drive to counteract human body capacitance. In an example embodiment, a container assembly includes a capacitive sensor with symmetrical CHx and CHy capacitor electrodes, corresponding in height to a liquid level measurement range. A CHx driver provides a CHx excitation/drive to the CHx electrode, and a CHy driver provides OoP CHy excitation/drive to the CHy electrode that is substantially 180 degrees out-of-phase with the CHx drive. Capacitance associated with the liquid level is measured by acquiring capacitance measurements through the CHx channel (such as based on capacitive charge transfer), and converting the capacitance measurements to an analog voltage corresponding to liquid-level capacitance (which can then be converted to digital data). The capacitive sensor can be configured with SHLDx/SHLDy shields disposed behind, and driven in phase with, respective CHx/CHy electrodes.

Abstract: An apparatus includes a sense module configured to be coupled to at least one power supply, where the sense module has a first leg. The apparatus also includes a replica module having a second leg, where the first and second legs have a common structure. The apparatus further includes a feedback loop configured to cause an output voltage across terminals of the replica module to at least substantially equal an input voltage across terminals of the sense module based on sense currents in the first and second legs. At least one cascode stage coupled to the sense module can be configured to reduce a voltage at which one or more signals from the sense module are referenced. One or more trim units can be used to reduce a gain error and/or an offset error between the input voltage and the output voltage.

Abstract: A circuit for driving a voice coil motor used to position the heads of a disk drive is disclosed. The circuit consists of a an H-bridge circuit, a controller, and a feedback loop. The feedback loop prevents the BEMF from driving a voltage on the voice coil motor above the supply voltage.

Abstract: A control circuit for providing a stable, adjustable, time constant for use as a master time constant is presented. Used as a master time-constant circuit, this control circuit can ensure multiple slave circuits are precisely calibrated. The circuit includes a charging section that receives a series of calibrating pulses. The reference cell's voltage is compared to a reference voltage equal of Vcc/e. If the cell's voltage is below the reference voltage, a current source charges a capacitor, lowering the resistance of the transistor in the cell to correct the time circuit inaccuracy. Conversely, if the cell's voltage is above the reference voltage, a current sink discharges the capacitor, raising the transistor's resistance. This also corrects the time circuit inaccuracy. Thus, this circuit includes a method to correct time-constants which are too large or too small. This circuit is used in various applications where extreme accuracy and precision is needed, such as media drive read/write heads.

Abstract: A motor drive control circuit for operation in both linear and PWM modes includes a switchably connected compensation network. The compensation network has a capacitor that provides control loop compensation. To avoid transient effects during the settling time upon transitions from one mode to the other, the switch connecting the compensation network in the circuit is closed only during linear operation and not during PWM mode operation. When the switch is open, the capacitor holds a previously attained potential that is reapplied to the circuit when the switch is again closed.

Abstract: A charge pump circuit with negative current feed back is disclosed. The charge pump circuit consists of charge pump stages, switch circuits in between the stages, and a feedback loop to control the conductivity of the switch circuit. The conductivity of the switch circuits is controlled by modulating the bias current of the switch circuit which modulates its conductivity. By using the feedback loop to control the conductivity, the output voltage of the charge pump circuit can be regulated.

Abstract: A circuit for driving a voice coil motor used to position the heads of a disk drive is disclosed. The circuit consists of a an H-bridge circuit, a controller, and a feedback loop. The feedback loop prevents the BEMF from driving a voltage on the voice coil motor above the supply voltage.

Abstract: A switch circuit for a charge pump circuit is disclosed. The switch circuit has a first transistor for conducting current and is controlled by a second, third, and fourth transistor. The second transistor protects the first transistor for excessive gate-to-drain voltage. The third transistor receives the signal for switching the switch circuit and also serves as a cascoding transistor for protecting the fourth transistor from excessive gate-to-drain voltage. Consequently, the switch circuit can withstand high gate-to-drain voltages and has increased reliability. The switch also has a turn-off circuit to facilitate the depletion of charge on the control element of the first transistor. The switch circuit also has a zener diode to insure that excessive voltage is not applied across the gate-to drain of the first transistor.

Abstract: In an anti-ESD protective structure, especially designed for pins destined to reach below ground and/or above supply voltages, includes a pair of Zener diodes or lateral NPN structures with a resistive connection between base and emitter, connected in opposition among each other between the pin to be protected and a grounded substrate of the integrated circuit. An amplifying effect on the leakage current which is drawn/injected through the pin by the protective structure caused by the triggering of an intrinsic parasitic transistor is effectively eliminated by connecting a biasing element, such as a forward biased junction, between the node of interconnection between the two Zener orlateral NPN structures and a node of the integrated circuit biased with a voltage sufficiently high as to ensure, under any condition, a reverse biasing of the base-emitter junction of the parasitic transistor.

Abstract: An isolation structure is provided to give improved protection from below ground current injection. A first epitaxial region is provided between a power field effect device and nearby control circuitry. The first epitaxial region is tied to the substrate, and the ties are located between the first epitaxial region and the power field effect device. On the opposite side of the power device, preferably adjacent an edge of the integrated circuit chip, a second epitaxial region is formed. This epitaxial region is connected to the first epitaxial region, preferably by a metal interconnect line. A second set of substrate contacts is located between the power device and the second epitaxial region, and is tied to ground. The second epitaxial region encourages injection of current at a location spaced away from the control circuitry.

Abstract: An integrated protective structure provides protection from electrostatic discharges of structures to an integrated circuit functionally connected to a certain external pin. The protective structure is formed in a single epitaxial tub and includes a triggering Zener diode and a vertical bipolar transistor. The collector region of the vertical bipolar transistor is connected to the pin and constitutes also one of the two terminal regions of the triggering Zener. Around the emitter region and separated therefrom by the smallest distance feasible, is an annular region, having a heavier doping than the base region of the transistor formed with the purpose of intercepting the avalanche current of the Zener junction and distributing it in a uniform manner into the base region of the vertical transistor as well as acting as a shield for eventual electrons moving from the emitter region toward the breakdown junction.

Abstract: A circuit for protection from overvoltages of an external electrical connection pad of a circuit integrated in an n type conductivity epitaxial layer formed on a monocrystal semiconductor substrate, comprises a lateral integrated transistor having an emitter connected to said pad, a collector connected to ground and a base connected to said pad across a resistor, and an integrated Zener diode functionally connected between the base and the collector of said transistor.