Patents by Inventor Atishay Kumar

Atishay Kumar has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method and system for repairing faulty cells of memory device
    Patent number: 12112823
    Abstract: A method for repairing a memory device with faulty memory cells. The method includes defining a RA environment comprising a location of each of the faulty memory cells and a plurality of SR and a plurality of SC. The method further includes repairing the faulty memory cells based on an RA training process using the defined RA environment and mapping of the location of each faulty memory cell with the plurality of SC or SR. The method further includes training, based on a determination that indicates the at least one faulty memory cell among the faulty memory cells is left unrepaired and the at least one SC or SR is remaining, a first NN to perform an action for repairing of the faulty memory cells such that a maximum number of faulty memory cells are reparable and a minimum number of SC and SR are utilized during the repairing.
    Type: Grant
    Filed: July 6, 2022
    Date of Patent: October 8, 2024
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Helik Kanti Thacker, Adrita Barari, Ankit Gupta, Atishay Kumar, Deokgu Yoon, Damini, Keerthi Kiran Jagannathachar
  • METHOD AND SYSTEM FOR REPAIRING FAULTY CELLS OF MEMORY DEVICE
    Publication number: 20230019575
    Abstract: A method for repairing a memory device with faulty memory cells. The method includes defining a RA environment comprising a location of each of the faulty memory cells and a plurality of SR and a plurality of SC. The method further includes repairing the faulty memory cells based on an RA training process using the defined RA environment and mapping of the location of each faulty memory cell with the plurality of SC or SR. The method further includes training, based on a determination that indicates the at least one faulty memory cell among the faulty memory cells is left unrepaired and the at least one SC or SR is remaining, a first NN to perform an action for repairing of the faulty memory cells such that a maximum number of faulty memory cells are reparable and a minimum number of SC and SR are utilized during the repairing.
    Type: Application
    Filed: July 6, 2022
    Publication date: January 19, 2023
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Helik Kanti Thacker, Adrita Barari, Ankit Gupta, Atishay Kumar, Deokgu Yoon, Damini, Keerthi Kiran Jagannathachar