Patents by Inventor Atiye Bayman
Atiye Bayman has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7217658Abstract: High density plasma chemical vapor deposition and etch back processes fill high aspect ratio gaps without liner erosion or further underlying structure attack. The characteristics of the deposition process are modulated such that the deposition component of the process initially dominates the sputter component of the process. For example, reactive gasses are introduced in a gradient fashion into the HDP reactor and introduction of bias power onto the substrate is delayed and gradually increased or reactor pressure is decreased. In the case of a multi-step etch enhanced gap fill process, the invention may involve gradually modulating deposition and etch components during transitions between process steps. By carefully controlling the transitions between process steps, including the introduction of reactive species into the HDP reactor and the application of source and bias power onto the substrate, structure erosion is prevented.Type: GrantFiled: September 7, 2004Date of Patent: May 15, 2007Assignee: Novellus Systems, Inc.Inventors: Atiye Bayman, George D. Papasouliotis, Yong Ling, Weijie Zhang, Vishal Gauri, Mayasari Lim
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Patent number: 7176039Abstract: A method for process optimization to extend the utility of the HDP CVD gap fill technique modifies the characteristics of the HDP process (deposition and sputter components) in a dynamic mode in the course of filling a trench with dielectric material. As a result, the amount of dielectric deposited on the sidewall of the trench relative to that deposited at its bottom can be reduced and optimally minimized, thus improving the gap fill capability of the process. The dynamic modification of process characteristics provides enhanced process performance, since the optimization of these characteristics depends upon structure geometry, which is constantly changing during a gap fill operation. During the course of the gap fill operation, either at one or more discrete points or continuously, the evolution of the feature geometry is determined, either by direct measurement or in accordance with a growth model.Type: GrantFiled: September 21, 2004Date of Patent: February 13, 2007Assignee: Novellus Systems, Inc.Inventors: George D. Papasouliotis, Atiye Bayman
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Patent number: 7067440Abstract: Chemical vapor deposition processes are employed to fill high aspect ratio (typically at least 3:1), narrow width (typically 1.5 microns or less and even sub 0.15 micron) gaps with significantly reduced incidence of voids or weak spots. This deposition process involves the use of hydrogen as a process gas in the reactive mixture of a plasma containing CVD reactor. The process gas also includes dielectric forming precursor molecules such as silicon and oxygen containing molecules.Type: GrantFiled: July 13, 2004Date of Patent: June 27, 2006Assignee: Novellus Systems, Inc.Inventors: Atiye Bayman, Md Sazzadur Rahman, Weijie Zhang, Bart van Schravendijk, Vishal Gauri, George D. Papasouliotis, Vikram Singh
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Patent number: 6787483Abstract: Chemical vapor deposition processes are employed to fill high aspect ratio (typically at least 3:1), narrow width (typically 1.5 microns or less and even sub 0.15 micron) gaps with significantly reduced incidence of voids or weak spots. This deposition process involves the use of hydrogen as a process gas in the reactive mixture of a plasma containing CVD reactor. The process gas also includes dielectric forming precursor molecules such as silicon and oxygen containing molecules.Type: GrantFiled: May 20, 2003Date of Patent: September 7, 2004Assignee: Novellus Systems, Inc.Inventors: Atiye Bayman, Md Sazzadur Rahman, Weijie Zhang, Bart van Schravendijk, Vishal Gauri, George D. Papasoulitotis, Vikram Singh
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Patent number: 6596654Abstract: Chemical vapor deposition processes are employed to fill high aspect ratio (typically at least 3:1), narrow width (typically 1.5 microns or less and even sub 0.15 micron) gaps with significantly reduced incidence of voids or weak spots. This deposition process involves the use of hydrogen as a process gas in the reactive mixture of a plasma containing CVD reactor. The process gas also includes dielectric forming precursor molecules such as silicon and oxygen containing molecules.Type: GrantFiled: November 28, 2001Date of Patent: July 22, 2003Assignee: Novellus Systems, Inc.Inventors: Atiye Bayman, Md Sazzadur Rahman, Weijie Zhang, Bart van Schravendijk, Vishal Gauri, George D. Papasoulitotis, Vikram Singh
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Patent number: 5188971Abstract: Bipolar devices on a common substrate are formed in tubs defined by a sinker that is self-aligning with the isolating trench and provides a relatively low vertical resistance contact from a surface contact to the underlying buried layer. In a first embodiment, the isolating trench initially is defined only down to the top surface of the buried layer. The trench walls are then doped, and the dopant allowed to diffuse laterally through the trench sidewalls. The resultant sinker is self-aligned with the isolating trench. The trench depth is then further increased to a desired depth preferably penetrating into the substrate. Thereafter, a bipolar device is formed in the tub, preferably with the device collector adjacent the trench and thus aligned with the sinker. In a second embodiment, an opening is formed in the surface oxide defining the area where the trench (when formed) will be cut.Type: GrantFiled: December 27, 1990Date of Patent: February 23, 1993Assignee: Synergy Semiconductor CorporationInventors: Larry J. Pollock, Atiye Bayman
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Patent number: 5001538Abstract: A sinker which is self-aligned with the oxide isolating trench which is used to define the tub in which the complete bipolar device is located. In a preferred approach to the process for forming the sinker of this invention, little additional diffusion of the sinker occurs during subsequent processing, whereby an effective sinker, aligned with the collector of the bipolar device, is achieved without additional masking steps.Type: GrantFiled: December 28, 1988Date of Patent: March 19, 1991Assignee: Synergy Semiconductor CorporationInventors: Larry J. Pollock, Atiye Bayman
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Patent number: 4468285Abstract: A plasma etching composition is set forth which comprises chlorine in an amount from about 40% to about 90%, a shape modifier species in an amount from about 10% to about 60%, and an etching selectivity enhancer in an amount sufficient to render the composition at least about 10 times as effective for etching a wafer as for etching a masking layer, the above percents being by mole. The composition is useful for plasma etching of a semiconductor wafer masked with a masking layer having an opening therethrough exposing a portion of the wafer which is to be etched in order to form a depression of a desired depth. This allows depressions of increased depth to be formed in wafers without increasing the thickness of the masking layer.Type: GrantFiled: December 22, 1983Date of Patent: August 28, 1984Assignee: Advanced Micro Devices, Inc.Inventors: Atiye Bayman, Mammen Thomas
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Patent number: 4456501Abstract: A semiconductor wafer masked with a masking layer having an opening therethrough exposing a portion of the wafer which is to be etched to form a depression of a desired depth is etched via a first plasma etching step under high bias voltage-high energy conditions with a plasma which includes chlorine and a shape modifier species, e.g., argon, to a first depth which is less than the desired depth. Thereafter, the depression is treated by a second plasma etching step under low bias voltage-low energy plasma etching conditions with a plasma which includes chlorine and is substantially free of the shape modifier species. A wet chemical etch follows to remove damaged silicon and impurities. The resulting depression has relatively straight walls and is relatively free of cusps and apexes. The depression is formed quickly and has a desired shape while only a minimal amount of damage and impurities are introduced into the wafer.Type: GrantFiled: December 22, 1983Date of Patent: June 26, 1984Assignee: Advanced Micro Devices, Inc.Inventors: Atiye Bayman, Mammen Thomas