Patents by Inventor Atm G. Sarwar

Atm G. Sarwar has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Spin orbit torque (SOT) memory devices and their methods of fabrication
    Patent number: 11367749
    Abstract: A spin orbit torque (SOT) memory device includes a magnetic tunnel junction (MTJ) device with one end coupled with a first electrode and an opposite end coupled with a second electrode including a spin orbit torque material. In an embodiment, a second electrode is coupled with the free magnet and coupled between a pair of interconnect line segments. The second electrode and the pair of interconnect line segments include a spin orbit torque material. The second electrode has a conductive path cross-section that is smaller than a cross section of the conductive path in at least one of the interconnect line segments.
    Type: Grant
    Filed: June 28, 2018
    Date of Patent: June 21, 2022
    Assignee: Intel Corporation
    Inventors: Noriyuki Sato, Angeline Smith, Tanay Gosavi, Sasikanth Manipatruni, Kaan Oguz, Kevin O'Brien, Tofizur Rahman, Gary Allen, Atm G. Sarwar, Ian Young, Hui Jae Yoo, Christopher Wiegand, Benjamin Buford
  • SPIN ORBIT TORQUE (SOT) MEMORY DEVICES AND THEIR METHODS OF FABRICATION
    Publication number: 20200006424
    Abstract: A spin orbit torque (SOT) memory device includes a magnetic tunnel junction (MTJ) device with one end coupled with a first electrode and an opposite end coupled with a second electrode including a spin orbit torque material. In an embodiment, a second electrode is coupled with the free magnet and coupled between a pair of interconnect line segments. The second electrode and the pair of interconnect line segments include a spin orbit torque material. The second electrode has a conductive path cross-section that is smaller than a cross section of the conductive path in at least one of the interconnect line segments.
    Type: Application
    Filed: June 28, 2018
    Publication date: January 2, 2020
    Applicant: Intel Corporation
    Inventors: Noriyuki Sato, Angeline Smith, Tanay Gosavi, Sasikanth Manipatruni, Kaan Oguz, Kevin O'Brien, Tofizur Rahman, Gary Allen, Atm G. Sarwar, Ian Young, Hui Jae Yoo, Christopher Weigand, Benjamin Buford