Patents by Inventor Atsufumui Hirohata

Atsufumui Hirohata has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METHOD OF PINNING DOMAIN WALLS IN A NANOWIRE MAGNETIC MEMORY DEVICE
    Publication number: 20140355337
    Abstract: There is provided a method of pinning domain walls in a magnetic memory device (10) comprising using an antiferromagnetic material to create domain wall pinning sites. Junctions (22) where arrays of ferromagnetic nanowires (16) and antiferromagnetic nanowires (20) cross exhibit a permanent exchange bias interaction between the ferromagnetic material and the antiferromagnetic material which creates domain wall pinning sites. The exchange bias field is between 30 to 3600 Oe and the anisotropy direction of the ferromagnetic elements is between 15 to 75° to an anisotropy direction of the antiferromagnetic elements.
    Type: Application
    Filed: October 8, 2012
    Publication date: December 4, 2014
    Applicant: University of York
    Inventors: Kevin O'Grady, Gonzalo Vallejo Fernandez, Atsufumui Hirohata