Abstract: There is provided a technique capable of forming a low resistance film. The technique includes sequentially repeating: a first step including a first process of supplying a reducing gas containing silicon and hydrogen and not containing halogen, in parallel with supply of a metal-containing gas, to a substrate in a process chamber; a second step including: a second process of stopping the supply of the metal-containing gas, and maintaining the supply of the reducing gas; and a third process of supplying an inert gas into the process chamber with the supply of the reducing gas stopped, and maintaining a pressure in the third process equal to a pressure in the second process or adjusting the pressure in the third process to a pressure different from the pressure in the second process; and a third step of supplying a nitrogen-containing gas to the substrate.

Abstract: There is provided a technique capable of detoxifying a process gas even when the detoxification apparatus is stopped. According to one aspect thereof, there is provided a substrate processing apparatus including: a reaction tube; a process gas supplier; an exhauster; an exhaust gas process chamber in which the exhausted process gas is subject to a process; a first inert gas supplier; a second inert gas supplier; an exhaust pipe; and a controller controlling the first and the second inert gas supplier such that the first inert gas is supplied to the exhaust gas process chamber through the first inert gas supplier while the process gas is subject to the process in the exhaust gas process chamber and the second inert gas is supplied to the exhaust gas process chamber through the second inert gas supplier when the process in the exhaust gas process chamber is stopped.

Abstract: A film having film continuity can be formed. There is provided a technique including: preparing a substrate having a metal-containing film formed on a surface thereof; and slimming the metal-containing film by pulse-supplying a halogen-containing gas to the substrate.

Abstract: There is provided a technique capable of forming a low resistance film. The technique includes sequentially repeating: a first step including a first process of supplying a reducing gas containing silicon and hydrogen and not containing halogen, in parallel with supply of a metal-containing gas, to a substrate in a process chamber; a second step including: a second process of stopping the supply of the metal-containing gas, and maintaining the supply of the reducing gas; and a third process of supplying an inert gas into the process chamber with the supply of the reducing gas stopped, and maintaining a pressure in the third process equal to a pressure in the second process or adjusting the pressure in the third process to a pressure different from the pressure in the second process; and a third step of supplying a nitrogen-containing gas to the substrate.

Abstract: The present invention is provided to improve quality or manufacturing throughput of a semiconductor device. A method includes supplying a source gas to a substrate in a process chamber; exhausting an inside of the process chamber; supplying a reaction gas to the substrate; and exhausting the inside of the process chamber, wherein the source gas and/or the reaction gas is supplied in temporally separated pulses in the supply of the source gas and/or in the supply of the reaction gas. Then, the source gas and/or the reaction gas is supplied in temporally separated pulses to form a film during a gas supply time determined by a concentration distribution of by-products formed on a surface of the substrate.

Abstract: The present invention is provided to improve quality or manufacturing throughput of a semiconductor device. A method includes supplying a source gas to a substrate in a process chamber; exhausting an inside of the process chamber; supplying a reaction gas to the substrate; and exhausting the inside of the process chamber, wherein the source gas and/or the reaction gas is supplied in temporally separated pulses in the supply of the source gas and/or in the supply of the reaction gas. Then, the source gas and/or the reaction gas is supplied in temporally separated pulses to form a film during a gas supply time determined by a concentration distribution of by-products formed on a surface of the substrate.

Abstract: To improve quality or manufacturing throughput of a semiconductor device, a method includes supplying a source gas to a substrate in a process chamber; exhausting an inside of the process chamber; supplying a reaction gas to the substrate; and exhausting the inside of the process chamber, wherein the source gas and/or the reaction gas is supplied in temporally separated pulses in the supply of the source gas and/or in the supply of the reaction gas. Then, the source gas and/or the reaction gas is supplied in temporally separated pulses to form a film during a gas supply time determined by a concentration distribution of by-products formed on a surface of the substrate.

Abstract: To improve quality or manufacturing throughput of a semiconductor device, a method includes supplying a source gas to a substrate in a process chamber; exhausting an inside of the process chamber; supplying a reaction gas to the substrate; and exhausting the inside of the process chamber, wherein the source gas and/or the reaction gas is supplied in temporally separated pulses in the supply of the source gas and/or in the supply of the reaction gas. Then, the source gas and/or the reaction gas is supplied in temporally separated pulses to form a film during a gas supply time determined by a concentration distribution of by-products formed on a surface of the substrate.

Abstract: There are provided an inner tube in which a substrate is stored; an outer tube surrounding the inner tube; a gas nozzle disposed in the inner tube; a gas ejection hole opened on the gas nozzle; a gas supply unit supplying gas into the inner tube through the gas nozzle; a gas exhausts hole opened on the side wall of the inner tube; and an exhaust unit exhausting a space between the outer tube and the inner tube and generating a gas flow in the inner tube toward the gas exhaust hole from the gas ejection hole, wherein the side wall of the inner tube is constituted, so that a distance between an outer edge of the substrate and the gas exhaust hole is set to be longer than a distance between the outer edge of the substrate and the gas ejection hole.