Abstract: A first light-receiving element of an embodiment of the disclosure includes: a semiconductor substrate including a photoelectric conversion region; a first first electrically-conductive region provided at a first surface interface of the semiconductor substrate and coupled to a first electrode; a second first electrically-conductive region provided around the first first electrically-conductive region and coupled to a second electrode, at the first surface interface; a third first electrically-conductive region in an electrically floating state provided around the second first electrically-conductive region, at the first surface interface; a first second electrically-conductive region having a different electrically-conductive type between the first first electrically-conductive region and the second first electrically-conductive region, at the first surface interface; and a fourth first electrically-conductive region provided at least between the first first electrically conductive region and the first secon

Abstract: A first light-receiving device of an embodiment of the disclosure includes: a first semiconductor substrate having first and second surfaces opposed to each other, receiving application of a first potential, and including light-receiving elements arranged two-dimensionally in matrix; a second semiconductor substrate having third and fourth surfaces opposed to each other, with the first surface and the third surface being disposed to be opposed to each other, receiving application of a second potential lower than the first potential, and including a logic circuit that processes a light-receiving signal based on electric charge outputted from the plurality of light-receiving elements; and an interlayer insulating layer provided between the first and second semiconductor substrates, in which the second semiconductor substrate has a side surface recessed more inward than a side surface of the first semiconductor substrate, and the side surface of the second semiconductor substrate is coated with a protective film

Abstract: A light-receiving element according to an embodiment of the present disclosure includes: a semiconductor substrate including a photoelectric conversion region; a first first electrically-conductive region provided at an interface of a first surface of the semiconductor substrate and coupled to a first electrode; a second first electrically-conductive region provided at the interface of the first surface and around the first first electrically-conductive region and coupled to a second electrode; a third first electrically-conductive region provided at the interface of the first surface and around the second first electrically-conductive region and being in an electrically floating state; and an electrically-conductive film provided above the first surface at least between the first first electrically-conductive region and the second first electrically-conductive region.

Abstract: The present disclosure relates to an image pickup device and an electronic apparatus that enable warping of a substrate to be suppressed. A first structural body including a pixel array unit is layered with a second structural body including an input/output circuit unit and outputting a pixel signal output from the pixel to the outside of the device, and a signal processing circuit; and a signal output external terminal and a signal input external terminal are arranged below the pixel array unit, the signal output external terminal being connected to the outside via a first through-via penetrating through a semiconductor substrate in the second structural body, the signal input external terminal being connected to the outside via a second through-via connected to an input circuit unit and penetrating through the semiconductor substrate. The present disclosure can be applied to, for example, the image pickup device, and the like.

Abstract: The present disclosure relates to an image pickup device and an electronic apparatus that enable warping of a substrate to be suppressed. A first structural body including a pixel array unit is layered with a second structural body including an input/output circuit unit and outputting a pixel signal output from the pixel to the outside of the device, and a signal processing circuit; and a signal output external terminal and a signal input external terminal are arranged below the pixel array unit, the signal output external terminal being connected to the outside via a first through-via penetrating through a semiconductor substrate in the second structural body, the signal input external terminal being connected to the outside via a second through-via connected to an input circuit unit and penetrating through the semiconductor substrate. The present disclosure can be applied to, for example, the image pickup device, and the like.

Abstract: The present disclosure relates to an image pickup device and an electronic apparatus that enable warping of a substrate to be suppressed. A first structural body including a pixel array unit is layered with second structural body including an input/output circuit unit and outputting a pixel signal output from the pixel to the outside of the device, and a signal processing circuit; and a signal output external terminal and a signal input external terminal are arranged below the pixel array unit, the signal output external terminal being connected to the outside via a first through-via penetrating through a semiconductor substrate in the second structural body, the signal input external terminal being connected to the outside via a second through-via connected to an input circuit unit and penetrating through the semiconductor substrate.

Abstract: The present disclosure relates to an image pickup device and an electronic apparatus that enable warping of a substrate to be suppressed. A first structural body including a pixel array unit is layered with second structural body including an input/output circuit unit and outputting a pixel signal output from the pixel to the outside of the device, and a signal processing circuit; and a signal output external terminal and a signal input external terminal are arranged below the pixel array unit, the signal output external terminal being connected to the outside via a first through-via penetrating through a semiconductor substrate in the second structural body, the signal input external terminal being connected to the outside via a second through-via connected to an input circuit unit and penetrating through the semiconductor substrate.

Abstract: The present disclosure relates to an image pickup device and an electronic apparatus that enable warping of a substrate to be suppressed. A first structural body including a pixel array unit is layered with a second structural body including an input/output circuit unit and outputting a pixel signal output from the pixel to the outside of the device, and a signal processing circuit; and a signal output external terminal and a signal input external terminal are arranged below the pixel array unit, the signal output external terminal being connected to the outside via a first through-via penetrating through a semiconductor substrate in the second structural body, the signal input external terminal being connected to the outside via a second through-via connected to an input circuit unit and penetrating through the semiconductor substrate.

Abstract: The present disclosure relates to an imaging device, a manufacturing method, and an electronic apparatus. An imaging device includes: a sensor substrate with an effective pixel area; a transparent sealing member that seals a surface of the sensor substrate; a sealing resin that bonds the sensor substrate and the sealing member; and a reinforcing resin that bonds the sensor substrate and the sealing member. A product of adhesive strength per unit area of the sealing resin and the reinforcing resin in the outer peripheral region and an area of a part bonded in the outer peripheral region is set to be larger than a product of adhesive strength per unit area of the sealing resin in the effective pixel area and an area of a part bonded in the effective pixel area. The present technology can be applied to, for example, a CMOS image sensor of WCSP.

Abstract: The present disclosure relates to an image pickup device and an electronic apparatus that enable warping of a substrate to be suppressed. A first structural body including a pixel array unit is layered with a second structural body including an input/output circuit unit and outputting a pixel signal output from the pixel to the outside of the device, and a signal processing circuit; and a signal output external terminal and a signal input external terminal are arranged below the pixel array unit, the signal output external terminal being connected to the outside via a first through-via penetrating through a semiconductor substrate in the second structural body, the signal input external terminal being connected to the outside via a second through-via connected to an input circuit unit and penetrating through the semiconductor substrate.

Abstract: The present disclosure relates to an image pickup device and an electronic apparatus that enable warping of a substrate to be suppressed. A first structural body including a pixel array unit is layered with a second structural body including an input/output circuit unit and outputting a pixel signal output from the pixel to the outside of the device, and a signal processing circuit; and a signal output external terminal and a signal input external terminal are arranged below the pixel array unit, the signal output external terminal being connected to the outside via a first through-via penetrating through a semiconductor substrate in the second structural body, the signal input external terminal being connected to the outside via a second through-via connected to an input circuit unit and penetrating through the semiconductor substrate.

Abstract: The present disclosure relates to an imaging device, a manufacturing method, and an electronic apparatus—An imaging device includes: a sensor substrate with an effective pixel area; a transparent sealing member that seals a surface of the sensor substrate; a sealing resin that bonds the sensor substrate and the sealing member; and a reinforcing resin that bonds the sensor substrate and the sealing member. A product of adhesive strength per unit area of the sealing resin and the reinforcing resin in the outer peripheral region and an area of a part bonded in the outer peripheral region is set to be larger than a product of adhesive strength per unit area of the sealing resin in the effective pixel area and an area of a part bonded in the effective pixel area. The present technology can be applied to, for example, a CMOS image sensor of WCSP.

Abstract: The present technology relates to a solid-state imaging element and an electronic device capable of improving image quality of the solid-state imaging element. The solid-state imaging element includes a photoelectric conversion unit adapted to photoelectrically convert incident light incident from a predetermined incident surface. Also, the solid-state imaging element includes a wire arranged on a bottom surface side that is an opposite surface of the incident surface of the photoelectric conversion unit, and formed with a protruding pattern on a surface facing the photoelectric conversion unit. The present technology can be applied to, for example, a solid-state imaging element such as a CMOS image sensor, and an electronic device including the solid-state imaging element.

Abstract: The present disclosure relates to an image pickup device and an electronic apparatus that enable warping of a substrate to be suppressed. A first structural body including a pixel array unit is layered with a second structural body including an input/output circuit unit and outputting a pixel signal output from the pixel to the outside of the device, and a signal processing circuit; and a signal output external terminal and a signal input external terminal are arranged below the pixel array unit, the signal output external terminal being connected to the outside via a first through-via penetrating through a semiconductor substrate in the second structural body, the signal input external terminal being connected to the outside via a second through-via connected to an input circuit unit and penetrating through the semiconductor substrate.

Abstract: The present technology relates to a solid-state imaging element and an electronic device capable of improving image quality of the solid-state imaging element. The solid-state imaging element includes a photoelectric conversion unit adapted to photoelectrically convert incident light incident from a predetermined incident surface. Also, the solid-state imaging element includes a wire arranged on a bottom surface side that is an opposite surface of the incident surface of the photoelectric conversion unit, and formed with a protruding pattern on a surface facing the photoelectric conversion unit. The present technology can be applied to, for example, a solid-state imaging element such as a CMOS image sensor, and an electronic device including the solid-state imaging element.

Abstract: A solid-state imaging device includes a photoelectric conversion portion, a charge-receiving portion to which charges are transferred from the photoelectric conversion portion, and a light control film having a reverse tapered opening over the photoelectric conversion portion to reduce the intensity of diffracted light diffusing to regions other than the photoelectric conversion portion.

Abstract: A solid-state imaging device includes a photoelectric conversion portion, a charge-receiving portion to which charges are transferred from the photoelectric conversion portion, and a light control film having a reverse tapered opening over the photoelectric conversion portion to reduce the intensity of diffracted light diffusing to regions other than the photoelectric conversion portion.

Abstract: A semiconductor device includes a side wall spacer formed on the side surface of a gate electrode formed on the upper side of a semiconductor substrate with a gate insulation film therebetween, extension regions built up on the semiconductor substrate, and source/drain regions formed on the extension regions, wherein a first epitaxial layer is formed so as to fill up portions, cut out at the time of forming the side wall spacer, of the semiconductor substrate, and the extension regions are formed on the first epitaxial layer from a second epitaxial layer of a conduction type opposite to that of the first epitaxial layer.

Abstract: A semiconductor device includes a side wall spacer formed on the side surface of a gate electrode formed on the upper side of a semiconductor substrate with a gate insulation film therebetween, extension regions built up on the semiconductor substrate, and source/drain regions formed on the extension regions, wherein a first epitaxial layer is formed so as to fill up portions, cut out at the time of forming the side wall spacer, of the semiconductor substrate, and the extension regions are formed on the first epitaxial layer from a second epitaxial layer of a conduction type opposite to that of the first epitaxial layer.

Abstract: A semiconductor device includes a side wall spacer formed on the side surface of a gate electrode formed on the upper side of a semiconductor substrate with a gate insulation film therebetween, extension regions built up on the semiconductor substrate, and source/drain regions formed on the extension regions, wherein a first epitaxial layer is formed so as to fill up portions, cut out at the time of forming the side wall spacer, of the semiconductor substrate, and the extension regions are formed on the first epitaxial layer from a second epitaxial layer of a conduction type opposite to that of the first epitaxial layer.