Abstract: A semiconductor element and a passive element are embedded in an insulating resin film by thermocompression bonding. After formation of a interconnection, a layered film which contains a film insulating between elements and is provided with a recess or penetrated portion is pressure-bonded followed by formation of a member with a high resistance or a high dielectric constant by embedding a material of a member constituting an element such as a resistor and a capacitor in the recess. Furthermore, after formation of the upper layer insulating resin film, a photoimageable solder resist layer containing the cardo type polymer is formed, and interconnection formation and solder electrode formation are performed.

Abstract: A semiconductor apparatus includes a substrate and elements or semiconductor chips provided on the substrate. The elements are sealed by being brought into contact with a sealing compound. The surface of contact on the elements or the sealing compound is plasma treated. The semiconductor chip is adhesively attached to another semiconductor chip via an adhesive compound. The surface of the semiconductor chip in contact with the adhesive compound is plasma treated.

Abstract: A semiconductor element and a passive element are embedded in an insulating resin film by thermocompression bonding. After formation of a interconnection, a layered film which contains a film insulating between elements and is provided with a recess or penetrated portion is pressure-bonded followed by formation of a member with a high resistance or a high dielectric constant by embedding a material of a member constituting an element such as a resistor and a capacitor in the recess. Furthermore, after formation of the upper layer insulating resin film, a photoimageable solder resist layer containing the cardo type polymer is formed, and interconnection formation and solder electrode formation are performed.

Abstract: A semiconductor apparatus includes a substrate and elements or semiconductor chips provided on the substrate. The elements are sealed by being brought into contact with a sealing compound. The surface of contact on the elements or the sealing compound is plasma treated. The semiconductor chip is adhesively attached to another semiconductor chip via an adhesive compound. The surface of the semiconductor chip in contact with the adhesive compound is plasma treated.

Abstract: A semiconductor device capable of easily setting the sheet resistance of a resistive element or the like to an arbitrary value is obtained. This semiconductor device comprises a first silicide film formed on a first silicon region and a second silicide film, formed on a second silicon region, consisting of the same silicide material as the first silicide film and differing from the first silicide film in film quality to have a sheet resistance value different from that of the first silicide film. When an impurity is introduced into the second silicide film itself so that the second silicide film differs from the first silicide film in film quality in this case, for example, a second silicide film having an arbitrary high sheet resistance value can be obtained by controlling the type of and an introduction condition for the impurity.

Abstract: A semiconductor device superior in reliability and suitable for microminiaturization is provided. An organic SOG film is formed on a silicon oxide film. Boron ions are implanted into the organic SOG film. By introducing boron ions into the organic SOG film, the organic components in the film are decomposed. Also, the moisture and hydroxyl group included in the film are reduced. After a metal interconnection is embedded in a modified SOG film by the Damascene method, a modified SOG film is formed thereon. Then, contact holes are formed. After a contact hole interconnection is embedded in the contact holes, a modified SOG film and an upper metal interconnection are formed by the Damascene method.

Abstract: A semiconductor device capable of easily setting the sheet resistance of a resistive element or the like to an arbitrary value is obtained. This semiconductor device comprises a first silicide film formed on a first silicon region and a second silicide film, formed on a second silicon region, consisting of the same silicide material as the first silicide film and differing from the first silicide film in film quality to have a sheet resistance value different from that of the first silicide film. When an impurity is introduced into the second silicide film itself so that the second silicide film differs from the first silicide film in film quality in this case, for example, a second silicide film having an arbitrary high sheet resistance value can be obtained by controlling the type of and an introduction condition for the impurity.

Abstract: A method of manufacturing a semiconductor device capable of suppressing increase of a leakage current resulting from a high-temperature heat treatment is obtained. In this manufacturing method, an impurity region is formed by selectively ion-implanting an impurity into the main surface of a semiconductor substrate. The impurity region is activated by performing a high-temperature heat treatment. The semiconductor device is recovered from crystal defects resulting from the high-temperature heat treatment by performing a low-temperature heat treatment after performing the high-temperature heat treatment. According to this manufacturing method, the semiconductor device is recovered from the crystal defects resulting from the ion implantation by the high-temperature heat treatment, and recovered from the crystal defects resulting from the high-temperature heat treatment by the low-temperature heat treatment.

Abstract: A semiconductor device superior in reliability and suitable for microminiaturization is provided. An organic SOG film is formed on a silicon oxide film. Boron ions are implanted into the organic SOG film. By introducing boron ions into the organic SOG film, the organic components in the film are decomposed. Also, the moisture and hydroxyl group included in the film are reduced. After a metal interconnection is embedded in a modified SOG film by the Damascene method, a modified SOG film is formed thereon. Then, contact holes are formed. After a contact hole interconnection is embedded in the contact holes, a modified SOG film and an upper metal interconnection are formed by the Damascene method.

Abstract: A pair of source/drain regions are formed on a semiconductor substrate at a predetermined interval. A gate insulator film is formed on the semiconductor substrate between the source/drain regions of the pair. A gate electrode is formed on the gate insulator film. A film for covering the gate electrode and the source/drain regions has a low permeability against water and a hydroxide group, and has a thickness greater than 3 nm and less than 5 nm.