Patents by Inventor Atsuhiro Tani
Atsuhiro Tani has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10134784Abstract: To eliminate electric discharge when an element formation layer including a semiconductor element is peeled from a substrate used for manufacturing the semiconductor element, a substrate over which an element formation layer and a peeling layer are formed and a film are made to go through a gap between pressurization rollers. The film is attached to the element formation layer between the pressurization rollers, bent along a curved surface of the pressurization roller on a side of the pressurization rollers, and collected. Peeling is generated between the element formation layer and the peeling layer and the element formation layer is transferred to the film. Liquid is sequentially supplied by a nozzle to a gap between the element formation layer and the peeling layer, which is generated by peeling, so that electric charge generated on surfaces of the element formation layer and the peeling layer is diffused by the liquid.Type: GrantFiled: February 9, 2017Date of Patent: November 20, 2018Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shingo Eguchi, Yohei Monma, Atsuhiro Tani, Misako Hirosue, Kenichi Hashimoto, Yasuharu Hosaka
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Publication number: 20170154902Abstract: To eliminate electric discharge when an element formation layer including a semiconductor element is peeled from a substrate used for manufacturing the semiconductor element, a substrate over which an element formation layer and a peeling layer are formed and a film are made to go through a gap between pressurization rollers. The film is attached to the element formation layer between the pressurization rollers, bent along a curved surface of the pressurization roller on a side of the pressurization rollers, and collected. Peeling is generated between the element formation layer and the peeling layer and the element formation layer is transferred to the film. Liquid is sequentially supplied by a nozzle to a gap between the element formation layer and the peeling layer, which is generated by peeling, so that electric charge generated on surfaces of the element formation layer and the peeling layer is diffused by the liquid.Type: ApplicationFiled: February 9, 2017Publication date: June 1, 2017Inventors: Shingo EGUCHI, Yohei MONMA, Atsuhiro TANI, Misako HIROSUE, Kenichi HASHIMOTO, Yasuharu HOSAKA
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Patent number: 9570329Abstract: To eliminate electric discharge when an element formation layer including a semiconductor element is peeled from a substrate used for manufacturing the semiconductor element, a substrate over which an element formation layer and a peeling layer are formed and a film are made to go through a gap between pressurization rollers. The film is attached to the element formation layer between the pressurization rollers, bent along a curved surface of the pressurization roller on a side of the pressurization rollers, and collected. Peeling is generated between the element formation layer and the peeling layer and the element formation layer is transferred to the film. Liquid is sequentially supplied by a nozzle to a gap between the element formation layer and the peeling layer, which is generated by peeling, so that electric charge generated on surfaces of the element formation layer and the peeling layer is diffused by the liquid.Type: GrantFiled: July 7, 2016Date of Patent: February 14, 2017Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shingo Eguchi, Yohei Monma, Atsuhiro Tani, Misako Hirosue, Kenichi Hashimoto, Yasuharu Hosaka
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Publication number: 20160314999Abstract: To eliminate electric discharge when an element formation layer including a semiconductor element is peeled from a substrate used for manufacturing the semiconductor element, a substrate over which an element formation layer and a peeling layer are formed and a film are made to go through a gap between pressurization rollers. The film is attached to the element formation layer between the pressurization rollers, bent along a curved surface of the pressurization roller on a side of the pressurization rollers, and collected. Peeling is generated between the element formation layer and the peeling layer and the element formation layer is transferred to the film. Liquid is sequentially supplied by a nozzle to a gap between the element formation layer and the peeling layer, which is generated by peeling, so that electric charge generated on surfaces of the element formation layer and the peeling layer is diffused by the liquid.Type: ApplicationFiled: July 7, 2016Publication date: October 27, 2016Inventors: Shingo EGUCHI, Yohei MONMA, Atsuhiro TANI, Misako HIROSUE, Kenichi HASHIMOTO, Yasuharu HOSAKA
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Patent number: 9472429Abstract: An object is to suppress discharge due to static electricity generated by peeling, when an element formation layer including a semiconductor element is peeled from a substrate. Over the substrate, the release layer and the element formation layer are formed. The support base material which can be peeled later is fixed to the upper surface of the element formation layer. The element formation layer is transformed through the support base material, and peeling is generated at an interface between the element formation layer and the release layer. Peeling is performed while the liquid is being supplied so that the element formation layer and the release layer which appear sequentially by peeling are wetted with the liquid such as pure water. Electric charge generated on the surfaces of the element formation layer and the release layer can be diffused by the liquid, and discharge by peeling electrification can be eliminated.Type: GrantFiled: July 24, 2014Date of Patent: October 18, 2016Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shingo Eguchi, Yohei Monma, Atsuhiro Tani, Misako Hirosue, Kenichi Hashimoto, Yasuharu Hosaka
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Patent number: 9397126Abstract: To eliminate electric discharge when an element formation layer including a semiconductor element is peeled from a substrate used for manufacturing the semiconductor element, a substrate over which an element formation layer and a peeling layer are formed and a film are made to go through a gap between pressurization rollers. The film is attached to the element formation layer between the pressurization rollers, bent along a curved surface of the pressurization roller on a side of the pressurization rollers, and collected. Peeling is generated between the element formation layer and the peeling layer and the element formation layer is transferred to the film. Liquid is sequentially supplied by a nozzle to a gap between the element formation layer and the peeling layer, which is generated by peeling, so that electric charge generated on surfaces of the element formation layer and the peeling layer is diffused by the liquid.Type: GrantFiled: July 16, 2015Date of Patent: July 19, 2016Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shingo Eguchi, Yohei Monma, Atsuhiro Tani, Misako Hirosue, Kenichi Hashimoto, Yasuharu Hosaka
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Publication number: 20160013221Abstract: To eliminate electric discharge when an element formation layer including a semiconductor element is peeled from a substrate used for manufacturing the semiconductor element, a substrate over which an element formation layer and a peeling layer are formed and a film are made to go through a gap between pressurization rollers. The film is attached to the element formation layer between the pressurization rollers, bent along a curved surface of the pressurization roller on a side of the pressurization rollers, and collected. Peeling is generated between the element formation layer and the peeling layer and the element formation layer is transferred to the film. Liquid is sequentially supplied by a nozzle to a gap between the element formation layer and the peeling layer, which is generated by peeling, so that electric charge generated on surfaces of the element formation layer and the peeling layer is diffused by the liquid.Type: ApplicationFiled: July 16, 2015Publication date: January 14, 2016Inventors: Shingo EGUCHI, Yohei MONMA, Atsuhiro TANI, Misako HIROSUE, Kenichi HASHIMOTO, Yasuharu HOSAKA
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Patent number: 9087931Abstract: To eliminate electric discharge when an element formation layer including a semiconductor element is peeled from a substrate used for manufacturing the semiconductor element, a substrate over which an element formation layer and a peeling layer are formed and a film are made to go through a gap between pressurization rollers. The film is attached to the element formation layer between the pressurization rollers, bent along a curved surface of the pressurization roller on a side of the pressurization rollers, and collected. Peeling is generated between the element formation layer and the peeling layer and the element formation layer is transferred to the film. Liquid is sequentially supplied by a nozzle to a gap between the element formation layer and the peeling layer, which is generated by peeling, so that electric charge generated on surfaces of the element formation layer and the peeling layer is diffused by the liquid.Type: GrantFiled: November 13, 2014Date of Patent: July 21, 2015Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shingo Eguchi, Yohei Monma, Atsuhiro Tani, Misako Hirosue, Kenichi Hashimoto, Yasuharu Hosaka
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Patent number: 9054141Abstract: An object is to suppress discharge due to static electricity generated by peeling, when an element formation layer including a semiconductor element is peeled from a substrate. Over the substrate, the release layer and the element formation layer are formed. The support base material which can be peeled later is fixed to the upper surface of the element formation layer. The element formation layer is transformed through the support base material, and peeling is generated at an interface between the element formation layer and the release layer. Peeling is performed while the liquid is being supplied so that the element formation layer and the release layer which appear sequentially by peeling are wetted with the liquid such as pure water. Electric charge generated on the surfaces of the element formation layer and the release layer can be diffused by the liquid, and discharge by peeling electrification can be eliminated.Type: GrantFiled: October 31, 2011Date of Patent: June 9, 2015Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shingo Eguchi, Yohei Monma, Atsuhiro Tani, Misako Hirosue, Kenichi Hashimoto, Yasuharu Hosaka
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Publication number: 20150140713Abstract: To eliminate electric discharge when an element formation layer including a semiconductor element is peeled from a substrate used for manufacturing the semiconductor element, a substrate over which an element formation layer and a peeling layer are formed and a film are made to go through a gap between pressurization rollers. The film is attached to the element formation layer between the pressurization rollers, bent along a curved surface of the pressurization roller on a side of the pressurization rollers, and collected. Peeling is generated between the element formation layer and the peeling layer and the element formation layer is transferred to the film. Liquid is sequentially supplied by a nozzle to a gap between the element formation layer and the peeling layer, which is generated by peeling, so that electric charge generated on surfaces of the element formation layer and the peeling layer is diffused by the liquid.Type: ApplicationFiled: November 13, 2014Publication date: May 21, 2015Inventors: Shingo EGUCHI, Yohei MONMA, Atsuhiro TANI, Misako HIROSUE, Kenichi HASHIMOTO, Yasuharu HOSAKA
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Publication number: 20150017751Abstract: An object is to suppress discharge due to static electricity generated by peeling, when an element formation layer including a semiconductor element is peeled from a substrate. Over the substrate, the release layer and the element formation layer are formed. The support base material which can be peeled later is fixed to the upper surface of the element formation layer. The element formation layer is transformed through the support base material, and peeling is generated at an interface between the element formation layer and the release layer. Peeling is performed while the liquid is being supplied so that the element formation layer and the release layer which appear sequentially by peeling are wetted with the liquid such as pure water. Electric charge generated on the surfaces of the element formation layer and the release layer can be diffused by the liquid, and discharge by peeling electrification can be eliminated.Type: ApplicationFiled: July 24, 2014Publication date: January 15, 2015Inventors: Shingo EGUCHI, Yohei MONMA, Atsuhiro TANI, Misako HIROSUE, Kenichi HASHIMOTO, Yasuharu HOSAKA
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Patent number: 8889438Abstract: To eliminate electric discharge when an element formation layer including a semiconductor element is peeled from a substrate used for manufacturing the semiconductor element, a substrate over which an element formation layer and a peeling layer are formed and a film are made to go through a gap between pressurization rollers. The film is attached to the element formation layer between the pressurization rollers, bent along a curved surface of the pressurization roller on a side of the pressurization rollers, and collected. Peeling is generated between the element formation layer and the peeling layer and the element formation layer is transferred to the film. Liquid is sequentially supplied by a nozzle to a gap between the element formation layer and the peeling layer, which is generated by peeling, so that electric charge generated on surfaces of the element formation layer and the peeling layer is diffused by the liquid.Type: GrantFiled: February 28, 2012Date of Patent: November 18, 2014Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shingo Eguchi, Yohei Monma, Atsuhiro Tani, Misako Hirosue, Kenichi Hashimoto, Yasuharu Hosaka
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Publication number: 20120168066Abstract: To eliminate electric discharge when an element formation layer including a semiconductor element is peeled from a substrate used for manufacturing the semiconductor element, a substrate over which an element formation layer and a peeling layer are formed and a film are made to go through a gap between pressurization rollers. The film is attached to the element formation layer between the pressurization rollers, bent along a curved surface of the pressurization roller on a side of the pressurization rollers, and collected. Peeling is generated between the element formation layer and the peeling layer and the element formation layer is transferred to the film. Liquid is sequentially supplied by a nozzle to a gap between the element formation layer and the peeling layer, which is generated by peeling, so that electric charge generated on surfaces of the element formation layer and the peeling layer is diffused by the liquid.Type: ApplicationFiled: February 28, 2012Publication date: July 5, 2012Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Shingo EGUCHI, Yohei MONMA, Atsuhiro TANI, Misako HIROSUE, Kenichi HASHIMOTO, Yasuharu HOSAKA
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Patent number: 8137417Abstract: An object is to eliminate electric discharge due to static electricity generated by peeling when an element formation layer including a semiconductor element is peeled from a substrate used for manufacturing the semiconductor element. A substrate over which an element formation layer and a peeling layer are formed and a film are made to go through a gap between pressurization rollers. The film is attached to the element formation layer between the pressurization rollers. The film is bent along a curved surface of the pressurization roller on a side of the pressurization rollers, where the film is collected, and accordingly, peeling is generated between the element formation layer and the peeling layer and the element formation layer is transferred to the film.Type: GrantFiled: September 21, 2007Date of Patent: March 20, 2012Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shingo Eguchi, Yohei Monma, Atsuhiro Tani, Misako Hirosue, Kenichi Hashimoto, Yasuharu Hosaka
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Publication number: 20120045861Abstract: An object is to suppress discharge due to static electricity generated by peeling, when an element formation layer including a semiconductor element is peeled from a substrate. Over the substrate, the release layer and the element formation layer are formed. The support base material which can be peeled later is fixed to the upper surface of the element formation layer. The element formation layer is transformed through the support base material, and peeling is generated at an interface between the element formation layer and the release layer. Peeling is performed while the liquid is being supplied so that the element formation layer and the release layer which appear sequentially by peeling are wetted with the liquid such as pure water. Electric charge generated on the surfaces of the element formation layer and the release layer can be diffused by the liquid, and discharge by peeling electrification can be eliminated.Type: ApplicationFiled: October 31, 2011Publication date: February 23, 2012Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shingo EGUCHI, Yohei MONMA, Atsuhiro TANI, Misako HIROSUE, Kenichi HASHIMOTO, Yasuharu HOSAKA
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Patent number: 8048777Abstract: An object is to suppress discharge due to static electricity generated by peeling, when an element formation layer including a semiconductor element is peeled from a substrate. Over the substrate, the release layer and the element formation layer are formed. The support base material which can be peeled later is fixed to the upper surface of the element formation layer. The element formation layer is transformed through the support base material, and peeling is generated at an interface between the element formation layer and the release layer. Peeling is performed while the liquid is being supplied so that the element formation layer and the release layer which appear sequentially by peeling are wetted with the liquid such as pure water. Electric charge generated on the surfaces of the element formation layer and the release layer can be diffused by the liquid, and discharge by peeling electrification can be eliminated.Type: GrantFiled: September 21, 2007Date of Patent: November 1, 2011Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shingo Eguchi, Yohei Monma, Atsuhiro Tani, Misako Hirosue, Kenichi Hashimoto, Yasuharu Hosaka
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Patent number: 8048770Abstract: An object is to suppress discharge due to static electricity generated by peeling, when an element formation layer including a semiconductor element is peeled from a substrate. Over the substrate, the release layer and the element formation layer are formed. The support base material which can be peeled later is fixed to the upper surface of the element formation layer. The element formation layer is transformed through the support base material, and peeling is generated at an interface between the element formation layer and the release layer. Peeling is performed while the liquid is being supplied so that the element formation layer and the release layer which appear sequentially by peeling are wetted with the liquid such as pure water. Electric charge generated on the surfaces of the element formation layer and the release layer can be diffused by the liquid, and discharge by peeling electrification can be eliminated.Type: GrantFiled: September 10, 2008Date of Patent: November 1, 2011Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shingo Eguchi, Yohei Monma, Atsuhiro Tani, Misako Hirosue, Kenichi Hashimoto, Yasuharu Hosaka
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Patent number: 8043936Abstract: An object is to suppress discharge due to static electricity generated by peeling, when an element formation layer including a semiconductor element is peeled from a substrate. Over the substrate, the release layer and the element formation layer are formed. The support base material which can be peeled later is fixed to the upper surface of the element formation layer. The element formation layer is transformed through the support base material, and peeling is generated at an interface between the element formation layer and the release layer. Peeling is performed while the liquid is being supplied so that the element formation layer and the release layer which appear sequentially by peeling are wetted with the liquid such as pure water. Electric charge generated on the surfaces of the element formation layer and the release layer can be diffused by the liquid, and discharge by peeling electrification can be eliminated.Type: GrantFiled: September 10, 2008Date of Patent: October 25, 2011Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shingo Eguchi, Yohei Monma, Atsuhiro Tani, Misako Hirosue, Kenichi Hashimoto, Yasuharu Hosaka
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Publication number: 20090023251Abstract: An object is to suppress discharge due to static electricity generated by peeling, when an element formation layer including a semiconductor element is peeled from a substrate. Over the substrate, the release layer and the element formation layer are formed. The support base material which can be peeled later is fixed to the upper surface of the element formation layer. The element formation layer is transformed through the support base material, and peeling is generated at an interface between the element formation layer and the release layer. Peeling is performed while the liquid is being supplied so that the element formation layer and the release layer which appear sequentially by peeling are wetted with the liquid such as pure water. Electric charge generated on the surfaces of the element formation layer and the release layer can be diffused by the liquid, and discharge by peeling electrification can be eliminated.Type: ApplicationFiled: September 10, 2008Publication date: January 22, 2009Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shingo Eguchi, Yohei Monma, Atsuhiro Tani, Misako Hirosue, Kenichi Hashimoto, Yasuharu Hosaka
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Publication number: 20090017567Abstract: An object is to suppress discharge due to static electricity generated by peeling, when an element formation layer including a semiconductor element is peeled from a substrate. Over the substrate, the release layer and the element formation layer are formed. The support base material which can be peeled later is fixed to the upper surface of the element formation layer. The element formation layer is transformed through the support base material, and peeling is generated at an interface between the element formation layer and the release layer. Peeling is performed while the liquid is being supplied so that the element formation layer and the release layer which appear sequentially by peeling are wetted with the liquid such as pure water. Electric charge generated on the surfaces of the element formation layer and the release layer can be diffused by the liquid, and discharge by peeling electrification can be eliminated.Type: ApplicationFiled: September 10, 2008Publication date: January 15, 2009Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shingo Eguchi, Yohei Monma, Atsuhiro Tani, Misako Hirosue, Kenichi Hashimoto, Yasuharu Hosaka