Abstract: In order to miniaturize a piezoelectric body module, in which a rhombus-shaped electronic part 4 and a polygonal-shaped electronic part 5 are arranged on a rectangular substrate 2: the rhombus-shaped electronic part 4 is arranged on the substrate 2 such that a side 105 of the substrate 2 and a side 101 of the rhombus-shaped electronic part 4 are parallel to each other; and the polygonal-shaped electronic part 5 is arranged on the substrate 2 such that a side 104 of the rhombus-shaped electronic part 4 and a side 109 of the polygonal-shaped electronic part 5 are parallel to each other.

Abstract: An aluminum wire is bonded to a silicon electrode by a wedge tool pressing the aluminum wire against the silicon electrode. In this way, a firmly bonded structure is obtained by sequentially stacking aluminum, aluminum oxide, silicon oxide, and silicon.

Abstract: In order to miniaturize a piezoelectric body module, in which a rhombus-shaped electronic part 4 and a polygonal-shaped electronic part 5 are arranged on a rectangular substrate 2: the rhombus-shaped electronic part 4 is arranged on the substrate 2 such that a side 105 of the substrate 2 and a side 101 of the rhombus-shaped electronic part 4 are parallel to each other; and the polygonal-shaped electronic part 5 is arranged on the substrate 2 such that a side 104 of the rhombus-shaped electronic part 4 and a side 109 of the polygonal-shaped electronic part 5 are parallel to each other.

Abstract: An aluminum wire is bonded to a silicon electrode by a wedge tool pressing the aluminum wire against the silicon electrode. In this way, a firmly bonded structure is obtained by sequentially stacking aluminum, aluminum oxide, silicon oxide, and silicon.

Abstract: An aluminum wire is bonded to a silicon electrode by a wedge tool pressing the aluminum wire against the silicon electrode. In this way, a firmly bonded structure is obtained by sequentially stacking aluminum, aluminum oxide, silicon oxide, and silicon.

Abstract: A junction structure and a method of manufacturing the same are provided which can achieve stable wire bonding between a Poly-Si film bonding pad and an Al wire. The junction structure is made up of a SiO2 film 5 formed on Si 4, a BPSG film 6 formed on the SiO2 film 5, a SiN film 7 formed on the BPSG film 6, a Poly-Si film bonding pad 1 formed on the SiN film 7, and an Al wire 2 bonded on the Poly-Si film bonding pad 1. A pad surface average roughness 8 of the Poly-Si film bonding pad 1 can be reduced. Thus it is possible to reduce gaps between bonding surfaces of the Al wire 2 and the Poly-Si film bonding pad 1 and increase a bonding area, thereby improving wire bonding characteristics.

Abstract: There is provided a connection structure between a Si electrode (Si member) and an Al wire (Al member). Between the Si electrode and the Al wire, a first part and second parts are present in interposed relation. Each of the first and second parts is in contact with the Si electrode and with the Al wire. In the first part, a Si oxide layer and an Al oxide layer are present. The Si oxide layer is in contact with the Si electrode. The Al oxide layer is interposed between the Si oxide layer and the Al wire. In some of the second parts, Al is present. In the others of the second parts, a Si portion and an Al portion are present.

Abstract: There is provided a connection structure between a Si electrode (Si member) and an Al wire (Al member). Between the Si electrode and the Al wire, a first part and second parts are present in interposed relation. Each of the first and second parts is in contact with the Si electrode and with the Al wire. In the first part, a Si oxide layer and an Al oxide layer are present. The Si oxide layer is in contact with the Si electrode. The Al oxide layer is interposed between the Si oxide layer and the Al wire. In some of the second parts, Al is present. In the others of the second parts, a Si portion and an Al portion are present.

Abstract: An aluminum wire is bonded to a silicon electrode by a wedge tool pressing the aluminum wire against the silicon electrode. In this way, a firmly bonded structure is obtained by sequentially stacking aluminum, aluminum oxide, silicon oxide, and silicon.