Patents by Inventor Atsuhito Sawabe
Atsuhito Sawabe has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20220127719Abstract: Provided are a structure for producing a high-quality single crystal diamond, and a method for manufacturing the structure for producing diamond. A structure for producing a diamond is composed of a base substrate and an Ir thin film formed on the base substrate. The thermal expansion coefficient of the base substrate is 5 times or less of the thermal expansion coefficient of diamond and the melting point of the base substrate is 700° C. or higher. The peak angle in the X-ray diffraction pattern of the Ir thin film is different from the peak angle in the X-ray diffraction pattern of the base substrate.Type: ApplicationFiled: October 21, 2021Publication date: April 28, 2022Inventors: Hideo Aida, Atsuhito Sawabe, Yutaka Kimura, Jun Mizuno, Ryuji Oshima
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Patent number: 9353458Abstract: The present invention provides a base substrate for epitaxial diamond film capable of epitaxially growing a large area of high quality diamond, having a diameter of 1 inch (2.5 cm) or more, on an iridium base by using the CVD method, a method for producing the base substrate for epitaxial diamond film, an epitaxial diamond film produced with the base substrate for epitaxial diamond film and a method for producing the epitaxial diamond film. An iridium (Ir) film is formed by epitaxial growth on a single crystal magnesium oxide (MgO) substrate or a single crystal sapphire (?-Al2O3) substrate by means of a vacuum deposition method or a sputtering method, and a bias nucleus generation process of forming epitaxial diamond nuclei is applied to the surface of the iridium (Ir) base formed as a film by exposing an ion-containing direct current plasma to the surface of the iridium (Ir) base formed as a film.Type: GrantFiled: February 5, 2007Date of Patent: May 31, 2016Assignee: ATSUHITO SAWABEInventors: Atsuhito Sawabe, Hitoshi Noguchi, Shintaro Maeda
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Patent number: 7628856Abstract: There is disclosed a method for producing a substrate for single crystal diamond growth, comprising at least a step of preliminarily subjecting a substrate before single crystal diamond growth to a bias treatment for forming a diamond nucleus thereon by a direct-current discharge in which an electrode in a substrate side is a cathode, and wherein in the treatment, at least, a temperature of the substrate from 40 sec after an initiation of the bias treatment to an end of the bias treatment is held in a range of 800° C.±60° C. There can be provided a method for producing a substrate for single crystal diamond growth, by which a single crystal diamond can be grown more certainly.Type: GrantFiled: March 2, 2007Date of Patent: December 8, 2009Assignees: Shin-Etsu Chemical Co., Ltd., AGD Material Co.Inventors: Atsuhito Sawabe, Hitoshi Noguchi, Shintaro Maeda
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Publication number: 20090176114Abstract: The present invention provides a base substrate for epitaxial diamond film capable of epitaxially growing a large area of high quality diamond, having a diameter of 1 inch (2.5 cm) or more, on an iridium base by using the CVD method, a method for producing the base substrate for epitaxial diamond film, an epitaxial diamond film produced with the base substrate for epitaxial diamond film and a method for producing the epitaxial diamond film. An iridium (Ir) film is formed by epitaxial growth on a single crystal magnesium oxide (MgO) substrate or a single crystal sapphire (?-Al2O3) substrate by means of a vacuum deposition method or a sputtering method, and a bias nucleus generation process of forming epitaxial diamond nuclei is applied to the surface of the iridium (Ir) base formed as a film by exposing an ion-containing direct current plasma to the surface of the iridium (Ir) base formed as a film.Type: ApplicationFiled: February 5, 2007Publication date: July 9, 2009Inventors: Atsuhito Sawabe, Shintaro Maeda
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Patent number: 7514146Abstract: There is provided a multilayer substrate comprising, at least, a single crystal MgO substrate, an iridium (Ir) film heteroepitaxially grown on the MgO substrate, a diamond film vapor-deposited on the Ir film, wherein crystallinity of the Ir film is that a full width at half maximum (FWHM) of a diffracted intensity peak in 2 ?=46.5° or 2?=47.3° attributed to Ir (200) analyzed by X-ray diffraction method with a wavelength of ?=1.54 ? is 0.40° or less. Thereby, there is provided a multilayer substrate that is delamination-proof at the respective interfaces between the MgO substrate and the Ir film and between the Ir film and the diamond film, and, particularly, that has a single crystal diamond film of a large area as a continuous film.Type: GrantFiled: March 7, 2006Date of Patent: April 7, 2009Assignees: Shin-Etsu Chemical Co., Ltd.Inventors: Hitoshi Noguchi, Atsuhito Sawabe
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Publication number: 20060203346Abstract: There is provided a multilayer substrate comprising, at least, a single crystal MgO substrate, an iridium (Ir) film heteroepitaxially grown on the MgO substrate, a diamond film vapor-deposited on the Ir film, wherein crystallinity of the Ir film is that a full width at half maximum (FWHM) of a diffracted intensity peak in 2 ?=46.5° or 2?=47.3° attributed to Ir (200) analyzed by X-ray diffraction method with a wavelength of ?=1.54 ? is 0.40° or less. Thereby, there is provided a multilayer substrate that is delamination-proof at the respective interfaces between the MgO substrate and the Ir film and between the Ir film and the diamond film, and, particularly, that has a single crystal diamond film of a large area as a continuous film.Type: ApplicationFiled: March 7, 2006Publication date: September 14, 2006Applicants: SHIN-ETSU CHEMICAL CO., LTD., ATSUHITO SAWABEInventors: Hitoshi Noguchi, Atsuhito Sawabe
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Patent number: 6593841Abstract: Disclosed herein is a planar magnetic element comprising a substrate, a first magnetic layer arranged over the substrate, a first insulation layer arranged over the first magnetic layer, a planer coil formed of a conductor, having a plurality of turns, arranged over the first insulation layer and having a gap aspect ratio of at least 1, the gap aspect ratio being the ratio of the thickness of the conductor to the gap between any adjacent two of the turns, a second insulation layer arranged over the planar coil, and a second magnetic layer arranged over the second insulation layer. When used as an inductor, the planar magnetic element has a great quality coefficient Q. When used as a transformer, it has a large gain and a high voltage ratio. Since the element is small and thin, it is suitable for use in an integrated circuit, and can greatly contribute to miniaturization of electronic devices.Type: GrantFiled: August 23, 1996Date of Patent: July 15, 2003Assignee: Kabushiki Kaisha ToshibaInventors: Tetsuhiko Mizoguchi, Toshiro Sato, Masashi Sahashi, Michio Hasegawa, Hiroshi Tomita, Atsuhito Sawabe
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Patent number: 6404317Abstract: Disclosed herein is a planar magnetic element comprising a substrate, a first magnetic layer arranged over the substrate, a first insulation layer arranged over the first magnetic layer, a planer coil formed of a conductor, having a plurality of turns, arranged over the first insulation layer and having a gap aspect ratio of at least 1, the gap aspect ratio being the ratio of the thickness of the conductor to the gap between any adjacent two of the turns, a second insulation layer arranged over the planar coil, and a second magnetic layer arranged over the second insulation layer. When used as an inductor, the planar magnetic element has a great quality coefficient Q. When used as a transformer, it has a large gain and a high voltage ratio. Since the element is small and thin, it is suitable for use in an integrated circuit, and can greatly contribute to miniaturization of electronic devices.Type: GrantFiled: August 23, 1996Date of Patent: June 11, 2002Assignee: Kabushiki Kaisha ToshibaInventors: Tetsuhiko Mizoguchi, Toshiro Sato, Masashi Sahashi, Michio Hasegawa, Hiroshi Tomita, Atsuhito Sawabe
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Patent number: 6395388Abstract: The present invention provides an exchange coupling film having a stacked-film-structure consisting of a ferromagnetic film made of at least one material of Fe, Co and Ni, and an antiferromagnetic film, wherein the exchange coupling film made of a ferromagnetic material to which an element is added, is provided at the interface between the ferromagnetic film and the antiferromagnetic film so as to improve the lattice matching, which results in the enhancement of the exchange coupling force, and a magnetoresistance effect element including such an exchange coupling film as described above, and an electrode for supplying a current to the ferromagnetic film which constitutes the exchange coupling film.Type: GrantFiled: November 17, 1999Date of Patent: May 28, 2002Assignee: Kabushiki Kaisha ToshibaInventors: Hitoshi Iwasaki, Yuichi Ohsawa, Reiko Kondoh, Susumu Hashimoto, Atsuhito Sawabe, Yuzo Kamiguchi, Masashi Sahashi, Hiromi Fuke
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Patent number: 6369992Abstract: A magneto-resistance effect head records and reproduces recorded magnetic material. The magneto-resistance effect head has a magneto-resistance effect film connected to a pair of leads. Additionally, a magnetic yoke, with a first and second magnetic yoke member, directs a signal magnetic field from a recording medium to the magneto-resistance effect film. The magneto-resistance effect head is constructed such that the first and second magnetic yoke members have surfaces that face the recording medium. The surfaces of the first and second magnetic yoke members have a magnetic gap between them. Additionally, the magneto-resistance effect film is recessed from the medium facing surfaces by a predetermined distance. Moreover, the first and second magnetic yoke members are aligned almost in parallel with the magnetic flux flow from the recording medium to the first magnetic yoke member, the magneto-resistance effect film, and the second magnetic yoke member.Type: GrantFiled: August 12, 1997Date of Patent: April 9, 2002Assignee: Kabushiki Kaisha ToshibaInventors: Hiroaki Yoda, Atsuhito Sawabe, Hitoshi Iwasaki, Yuichi Ohsawa, Masashi Sahashi, Tadahiko Kobayashi
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Patent number: 6368706Abstract: The present invention provides an exchange coupling film having a stacked-film-structure consisting of a ferromagnetic film made of at least one material of Fe, Co and Ni, and an antiferromagnetic film, wherein the exchange coupling film made of a ferromagnetic material to which an element is added, is provided at the interface between the ferromagnetic film and the antiferromagnetic film so as to improve the lattice matching, which results in the enhancement of the exchange coupling force, and a magnetoresistance effect element including such an exchange coupling film as described above, and an electrode for supplying a current to the ferromagnetic film which constitutes the exchange coupling film.Type: GrantFiled: July 8, 1998Date of Patent: April 9, 2002Assignee: Kabushiki Kaisha ToshibaInventors: Hitoshi Iwasaki, Yuichi Ohsawa, Reiko Kondoh, Susumu Hashimoto, Atsuhito Sawabe, Yuzo Kamiguchi, Masashi Sahashi, Hiromi Fuke
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Patent number: 6362940Abstract: A recording-reproducing magnetic head comprising a magnetoresistance effect reproducing head and an inductive recording head. The magnetoresistance effect reproducing head having a magnetoresistance effect element and the inductive recording head having a lower magnetic core, an upper magnetic core, coils sandwiched between the lower and upper magnetic cores at their mid-parts, and a recording magnetic cores at leading end parts. The leading end parts of the lower and upper magnetic cores having a protruding part protruding to the recording magnetic gap layer and the upper magnetic core having a continuous magnetic body which extends from the protruding part to the mid-part. A center line of the protruding part of the lower magnetic core, which extends in a track length direction on a surface opposite a medium, intersecting the protruding part of the upper magnetic core.Type: GrantFiled: March 7, 2000Date of Patent: March 26, 2002Assignee: Kabushiki Kaisha ToshibaInventors: Hiroaki Yoda, Atsuhito Sawabe, Hitoshi Iwasaki, Naoyuki Inoue, Akio Hori
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Patent number: 6198597Abstract: A thin-film magnetic head comprises a magnetic gap disposed to be positioned on an air bearing surface of the magnetic head, a pair of magnetic poles disposed to hold the magnetic gap therebetween, and a coil positioned between the pair of the magnetic poles to intersect the magnetic poles, wherein at least one of the magnetic poles being composed of a T-shaped magnetic pole, the T-shaped magnetic pole comprising a front part of a magnetic pole contacting with the magnetic gap, an intermediate part of a magnetic pole lying on the front part, and a rear part of a magnetic pole lying on the intermediate part, wherein a width of the front part roughly defines a track width, the rear part has a wider width in a direction of track width than a width of the front part, and the intermediate part contacts with the rear part at an entire width of the rear part at the air bearing surface and has a narrower width at a contacting face with the front part than the width of the rear part.Type: GrantFiled: September 16, 1998Date of Patent: March 6, 2001Assignee: Kabushiki Kaisha ToshibaInventors: Kohichi Tateyama, Hiroaki Yoda, Atsuhito Sawabe, Naoyuki Inoue, Akio Hori, Tadahiko Kobayashi, Hiromi Sakata, Michiko Hara, Takasi Koizumi, Tomohiko Nagata, Takeo Sakakubo, Kei Sakoda
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Patent number: 6159593Abstract: The present invention provides an exchange coupling film having a stacked-film-structure consisting of a ferromagnetic film made of at least one material of Fe, Co and Ni, and an antiferromagnetic film, wherein the exchange coupling film made of a ferromagnetic material to which an element is added, is provided at the interface between the ferromagnetic film and the antiferromagnetic film so as to improve the lattice matching, which results in the enhancement of the exchange coupling force, and a magnetoresistance effect element including such an exchange coupling film as described above, and an electrode for supplying a current to the ferromagnetic film which constitutes the exchange coupling film.Type: GrantFiled: April 16, 1998Date of Patent: December 12, 2000Assignee: Kabushiki Kaisha ToshibaInventors: Hitoshi Iwasaki, Yuichi Ohsawa, Reiko Kondoh, Susumu Hashimoto, Atsuhito Sawabe, Yuzo Kamiguchi, Masashi Sahashi, Hiromi Fuke
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Patent number: 6115216Abstract: A magnetoresistance effect type head comprises a magnetoresistance effect film having a pair of leads connected thereto and possessing a magnetic field responding part and a pair of upper and lower shield layers having a magnetoresistance effect film nipped therebetween through the medium of a magnetic gap-forming insulating film. This magnetoresistance effect type head satisfies the relations, W.sub.s <W.sub.r and T.sub.r <W.sub.r, wherein W.sub.s stands for the width of the surface of the upper shield layer facing the magnetoresistance effect film, W.sub.r for the distance between the pair of leads, and T.sub.r for the width of the magnetic field responding part of the magnetoresistance effect film. The magnetic field responding part of the magnetoresistance effect film is formed as of the remainder of the MR film region whose magnetic moment is fixed outside the end part of the upper shield layer facing the MA film.Type: GrantFiled: January 8, 1997Date of Patent: September 5, 2000Assignee: Kabushiki Kaisha ToshibaInventors: Hiroaki Yoda, Atsuhito Sawabe, Hitoshi Iwasaki, Naoyuki Inoue, Akio Hori
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Patent number: 6056996Abstract: A magnetoresistance effect type head comprises a magnetoresistance effect film having a pair of leads connected thereto and possessing a magnetic field responding part and a pair of upper and lower shield layers having a magnetoresistance effect film nipped therebetween through the medium of a magnetic gap-forming insulating film. This magnetoresistance effect type head satisfies the relations, W.sub.s <W.sub.r and T.sub.r <W.sub.r, wherein W.sub.s stands for the width of the surface of the upper shield layer facing the magnetoresistance effect film, W.sub.r for the distance between the pair of leads, and T.sub.r for the width of the magnetic field responding part of the magnetoresistance effect film. The magnetic field responding part of the magnetoresistance effect film is formed as of the remainder of the MR film region whose magnetic moment is fixed outside the end part of the upper shield layer facing the MA film.Type: GrantFiled: July 22, 1999Date of Patent: May 2, 2000Assignee: Kabushiki Kaisha ToshibaInventors: Hiroaki Yoda, Atsuhito Sawabe, Hitoshi Iwasaki, Naoyuki Inoue, Akio Hori
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Patent number: 5872693Abstract: A thin-film magnetic head comprising a lower magnetic core formed on a substrate, an upper magnetic core formed on the lower magnetic core with a magnetic gap therebetween, and a coil interposed between the lower magnetic core and the upper magnetic core as insulated from the lower magnetic core and the upper magnetic core, characterized in that at least either of the lower magnetic core and the upper magnetic core comprises a front body of a magnetic pole facing a magnetic recording medium and a rear body of a magnetic pole having part thereof superposed on the front body of the magnetic pole, the rear body of the magnetic pole is disposed as recessed from the head surface facing the medium and held in contact with the front body of the magnetic pole in a plane, the plane is terminated at a rear of the end of the front body of the magnetic pole, and the rear body of the magnetic pole has a shape curved or bent in the direction opposite to the magnetic gap, and further the front body of the magnetic pole is cType: GrantFiled: March 24, 1997Date of Patent: February 16, 1999Assignee: Kabushiki Kaisha ToshibaInventors: Hiroaki Yoda, Atsuhito Sawabe, Naoyuki Inoue, Akio Hori
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Patent number: 5801521Abstract: Disclosed herein is a planar magnetic element comprising a substrate, a first magnetic layer arranged over the substrate, a first insulation layer arranged over the first magnetic layer, a planer coil formed of a conductor, having a plurality of turns, arranged over the first insulation layer and having a gap aspect ratio of at least 1, the gap aspect ratio being the ratio of the thickness of the conductor to the gap between any adjacent two of the turns, a second insulation layer arranged over the planar coil, and a second magnetic layer arranged over the second insulation layer. When used as an inductor, the planar magnetic element has a great quality coefficient Q. When used as a transformer, it has a large gain and a high voltage ratio. Since the element is small and thin, it is suitable for use in an integrated circuit, and can greatly contribute to miniaturization of electronic devices.Type: GrantFiled: September 3, 1996Date of Patent: September 1, 1998Assignee: Kabushiki Kaisha ToshibaInventors: Tetsuhiko Mizoguchi, Toshiro Sato, Masashi Sahashi, Michio Hasegawa, Hiroshi Tomita, Atsuhito Sawabe
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Patent number: 5780176Abstract: The present invention provides an exchange coupling film having a stacked-film-structure consisting of a ferromagnetic film made of at least one material of Fe, Co and Ni, and an antiferromagnetic film, wherein the exchange coupling film made of a ferromagnetic material to which an element is added, is provided at the interface between the ferromagnetic film and the antiferromagnetic film so as to improve the lattice matching, which results in the enhancement of the exchange coupling force, and a magnetoresistance effect element including such an exchange coupling film as described above, and an electrode for supplying a current to the ferromagnetic film which constitutes the exchange coupling film.Type: GrantFiled: June 28, 1996Date of Patent: July 14, 1998Assignee: Kabushiki Kaisha ToshibaInventors: Hitoshi Iwasaki, Yuichi Ohsawa, Reiko Kondoh, Susumu Hashimoto, Atsuhito Sawabe, Yuzo Kamiguchi, Masashi Sahashi, Hiromi Fuke
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Patent number: 5738946Abstract: It is an object of the present invention to provide a magnetoresistance effect element which has a film with a spin valve structure or an artificial lattice film having good soft magnetic characteristics, and which can be applied to a high-sensitivity magnetic head. The present invention provides a magneto-resistance effect element including a stacked film formed on a substrate by sequentially stacking a ferromagnetic film containing as its main constituents at least one elements selected from the group consisting of Co, Fe, and Ni, a nonmagnetic film, and the ferromagnetic film, wherein the two ferromagnetic films are not coupled with each other, and the closest packed plane of each ferromagnetic film is oriented in a direction perpendicular to the film surface.Type: GrantFiled: May 23, 1996Date of Patent: April 14, 1998Assignee: Kabushiki Kaisha ToshibaInventors: Hitoshi Iwasaki, Yuichi Ohsawa, Reiko Kondoh, Susumu Hashimoto, Atsuhito Sawabe, Yuzo Kamiguchi, Masashi Sahashi