Patents by Inventor Atsuki KUSUNOKI

Atsuki KUSUNOKI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240006153
    Abstract: A plasma processing system includes a plasma processing chamber, a substrate support, a matching box, an RF power source, and a controller. The substrate support is disposed in the plasma processing chamber. The matching box is electrically connected to the substrate support. The RF power source is electrically connected to the matching box to generate a periodic RF pulse that includes a first power level, a second power level, and a third power level. The controller calculates the load impedance based on the reflected power of the RF pulse in each of first, second, and third time intervals during which the first, second, and third power levels are supplied, respectively, and controls a matching element included in the matching box based on the load impedance calculated in each of the first, second, and third time intervals.
    Type: Application
    Filed: June 29, 2023
    Publication date: January 4, 2024
    Applicant: Tokyo Electron Limited
    Inventor: Atsuki KUSUNOKI
  • Patent number: 11610762
    Abstract: A plasma processing apparatus includes a process chamber; a mounting stage; first and second electrodes; first and second high frequency power sources, wherein the first power source supplies a waveform of one of a first pulse wave having high and low levels of first high frequency power or a continuous wave in the first period, supplies a waveform of the other in the second period, and stepwise or continuously changes the low level of the first pulse wave in the transition period, wherein the second power source supplies a waveform of one of a second pulse wave having high and low levels of second high frequency power or a continuous wave in the first period, supplies a waveform of the other in the second period, and stepwise or continuously changes the low level of the second pulse wave in the transition period.
    Type: Grant
    Filed: August 5, 2021
    Date of Patent: March 21, 2023
    Assignee: Tokyo Electron Limited
    Inventor: Atsuki Kusunoki
  • Publication number: 20220051874
    Abstract: A plasma processing apparatus includes a process chamber; a mounting stage; first and second electrodes; first and second high frequency power sources;, wherein the first power source supplies a waveform of one of a first pulse wave having high and low levels of first high frequency power or a continuous wave in the first period, supplies a waveform of the other in the second period, and stepwise or continuously changes the low level of the first pulse wave in the transition period, wherein the second power source supplies a waveform of one of a second pulse wave having high and low levels of second high frequency power or a continuous wave in the first period, supplies a waveform of the other in the second period, and stepwise or continuously changes the low level of the second pulse wave in the transition period.
    Type: Application
    Filed: August 5, 2021
    Publication date: February 17, 2022
    Inventor: Atsuki KUSUNOKI