Patents by Inventor Atsuko Akiyama

Atsuko Akiyama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for making semiconductor device utilizing molecular beam epitaxy to form the emitter layers
    Patent number: 4563807
    Abstract: Semiconductor device, such as bipolar transistor, is made by molecular beam epitaxy, wherein a emitter layer (27) and overriding contact regions (28) of polycrystalline silicon are grown continuously on a silicon substrate (23+26) without breaking high vacuum, thus eliminating the adverse interface of natural oxide film under the polycrystalline silicon layer (28) and the adverse donor-acceptor compensation while attaining a well controlled h.sub.FE and enabling a shallow emitter junction.
    Type: Grant
    Filed: April 4, 1984
    Date of Patent: January 14, 1986
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Hiroyuki Sakai, Toyoki Takemoto, Kenji Kawakita, Tsutomu Fujita, Atsuko Akiyama