Patents by Inventor Atsuko Ando

Atsuko Ando has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Graphite member for beam-line internal member of ion implantation apparatus
    Patent number: 8673450
    Abstract: The problem of the present invention is to provide, in high current-low energy type ion implantation apparatuses, a graphite member for a beam line inner member of an ion implantation apparatus, which graphite member can markedly reduce particles incorporated in a wafer surface. This problem can be solved by the graphite member of the present invention, which is a graphite member for a beam line inner member of an ion implantation apparatus, which member having a bulk density of not less than 1.80 Mg/m3 and an electric resistivity of not more than 9.5 ??·m. Preferably, the R value obtained by dividing D band intensity at 1370 cm?1 by G band intensity at 1570 cm?1 in the Raman spectrum of a spontaneous fracture surface of the graphite member is not more than 0.20.
    Type: Grant
    Filed: October 12, 2006
    Date of Patent: March 18, 2014
    Assignee: Toyo Tanso Co., Ltd.
    Inventors: Kiyoshi Saito, Fumiaki Yokoyama, Hitoshi Suzuki, Atsuko Ando, Tetsuro Tojo, Seiji Shinohara
  • Graphite Member for Beam-Line Internal Member of Ion Implantation Apparatus
    Publication number: 20090181527
    Abstract: The problem of the present invention is to provide, in high current-low energy type ion implantation apparatuses, a graphite member for a beam line inner member of an ion implantation apparatus, which graphite member can markedly reduce particles incorporated in a wafer surface. This problem can be solved by the graphite member of the present invention, which is a graphite member for a beam line inner member of an ion implantation apparatus, which member having a bulk density of not less than 1.80 Mg/m3 and an electric resistivity of not more than 9.5 ??·m. Preferably, the R value obtained by dividing D band intensity at 1370 cm?1 by G band intensity at 1570 cm?1 in the Raman spectrum of a spontaneous fracture surface of the graphite member is not more than 0.20.
    Type: Application
    Filed: October 12, 2006
    Publication date: July 16, 2009
    Inventors: Kiyoshi Saito, Fumiaki Yokoyama, Hitoshi Suzuki, Atsuko Ando, Tetsuro Tojo, Seiji Shinohara