Abstract: Provided is a semiconductor device including: a base plate; a thermally conductive resin layer formed on an upper surface of the base plate; an integrated layer which is formed on an upper surface of the thermally conductive resin layer, and includes an electrode and an insulating resin layer covering all side surfaces of the electrode; and a semiconductor element formed on an upper surface of the electrode, in which the integrated layer is thermocompression bonded to the base plate through the thermally conductive resin layer. This semiconductor device excels in insulating properties and reliability.

Abstract: Provided is a heat conductive sheet obtained by dispersing an inorganic filler in a thermosetting resin, in which the inorganic filler contains secondary aggregation particles formed by isotropically aggregating scaly boron nitride primary particles having an average length of 15 ?m or less, and the inorganic filler contains more than 20 vol % of the secondary aggregation particles each having a particle diameter of 50 ?m or more. The heat conductive sheet is advantageous in terms of productivity and cost and excellent in heat conductivity and electrical insulating properties.

Abstract: Provided is a heat conductive sheet obtained by dispersing an inorganic filler in a thermosetting resin, in which the inorganic filler contains secondary aggregation particles formed by isotropically aggregating scaly boron nitride primary particles having an average length of 15 ?m or less, and the inorganic filler contains more than 20 vol % of the secondary aggregation particles each having a particle diameter of 50 ?m or more. The heat conductive sheet is advantageous in terms of productivity and cost and excellent in heat conductivity and electrical insulating properties.

Abstract: Provided is a semiconductor device including: a base plate; a thermally conductive resin layer formed on an upper surface of the base plate; an integrated layer which is formed on an upper surface of the thermally conductive resin layer, and includes an electrode and an insulating resin layer covering all side surfaces of the electrode; and a semiconductor element formed on an upper surface of the electrode, in which the integrated layer is thermocompression bonded to the base plate through the thermally conductive resin layer. This semiconductor device excels in insulating properties and reliability.

Abstract: An objective is to provide a reliability-improved semiconductor device in which heat radiation characteristics are superior, and warpage of the semiconductor device occurring due to heat generation of a semiconductor chip or to varying of the usage environment is also suppressed. The semiconductor device is provided that includes a thermal-conductive sheet 3 formed on a base board 4, including thermal-conductive resin 6, a heat sink 2 provided on the base board 4 through the thermal-conductive sheet 3, a semiconductor chip 1 mounted on the heat sink 2, and a ceramic-embedded region 31 selectively provided in a region of the thermal-conductive sheet 3 under the semiconductor chip 1, including a ceramic component 5. In this semiconductor device, superior thermal conductivity can be ensured, and warpage and peeling in the semiconductor device occurring due to heat generation of the semiconductor chip or to varying of the usage environment can also be reduced.

Abstract: An objective is to provide a reliability-improved semiconductor device in which heat radiation characteristics are superior, and warpage of the semiconductor device occurring due to heat generation of a semiconductor chip or to varying of the usage environment is also suppressed. The semiconductor device is provided that includes a thermal-conductive sheet 3 formed on a base board 4, including thermal-conductive resin 6, a heat sink 2 provided on the base board 4 through the thermal-conductive sheet 3, a semiconductor chip 1 mounted on the heat sink 2, and a ceramic-embedded region 31 selectively provided in a region of the thermal-conductive sheet 3 under the semiconductor chip 1, including a ceramic component 5. In this semiconductor device, superior thermal conductivity can be ensured, and warpage and peeling in the semiconductor device occurring due to heat generation of the semiconductor chip or to varying of the usage environment can also be reduced.

Abstract: A light-block film is formed on a substrate, and a chemically amplified resist film is then formed on the light-block film. The chemically amplified resist film includes a photosensitive acid generator which generates an acid upon irradiation with activating light or radiation, and mainly contains a first resin that becomes soluble in bases by action of the acid. Next, a protective film is formed on the chemically amplified resist film and thereby yields a mask blank. The protective film is formed by dissolving a second resin and the photosensitive acid generator in a solvent that does not substantially dissolve the chemically amplified resist film to prepare a solution, and applying the solution to the chemically amplified resist film.

Abstract: A light-block film is formed on a substrate, and a chemically amplified resist film is then formed on the light-block film. The chemically amplified resist film includes a photosensitive acid generator which generates an acid upon irradiation with active light or radiant ray, and mainly contains a first resin that becomes soluble in bases by action of an acid. Next, a protective film is formed on the chemically amplified resist film and thereby yields a mask blank. The protective film is formed by dissolving a second resin and the photosensitive acid generator in a solvent that does not substantially dissolve the chemically amplified resist film, and applying the solution onto the chemically amplified resist film.

Abstract: By using a developer consisting essentially of one organic solvent selected from the group consisting of a ketone having 3 to 8 carbon atoms, a carboxylate ester having 3 to 8 carbon atoms, which may have an alkoxy group, and a dicarboxylate ester having 3 to 8 carbon atoms for developing a positive-type radiation resist containing a copolymer of an &agr;-methyl styrene compound and an &agr;-chloroacrylate ester compound as a base resin, there is provided a developing process and a process for forming a pattern (according to GHOST method in particular) which are used for preparing an excellent resist pattern profile, a process for preparing a photomask and a process for preparing a semiconductor device.

Abstract: An exposure method, an exposure apparatus, an X-ray mask and a resist for achieving enhanced resolution and throughput compared with those having been accomplished are provided and further a semiconductor device and a microstructure manufactured by using them are provided. According to the exposure method, X rays emitted from an X-ray source are radiated to a resist film via an X-ray mask. A material constituting the resist film is selected to have an average wavelength of X rays absorbed by the resist film that is equal to or smaller than an average wavelength of X rays radiated to the resist film.

Abstract: By using a developer consisting essentially of one organic solvent selected from the group consisting of a ketone having 3 to 8 carbon atoms, a carboxylate ester having 3 to 8 carbon atoms, which may have an alkoxy group, and a dicarboxylate ester having 3 to 8 carbon atoms for developing a positive-type radiation resist containing a copolymer of an &agr;-methyl styrene compound and an &agr;-chloroacrylate ester compound as a base resin, there is provided a developing process and a process for forming a pattern (according to GHOST method in particular) which are used for preparing an excellent resist pattern profile, a process for preparing a photomask and a process for preparing a semiconductor device.