Abstract: A test device 1 for analyzing a specific component in a test solution with a reagent by allowing the solution introduced via a feed opening 4 to react with the reagent maintained in a predetermined position in a capillary tube 3 having the opening 4 and an air outlet 5. The tube is provided with two hydrophilic regions 31, 33 and a hydrophobic region 32. The region 31 transfers the solution from the opening 4 to the reagent. The region 33 is delimited to a predetermined area maintaining the reagent. The region 32 separates the region 31 from the region 33. The reagent and the solution are applied in predetermined amounts to the region 33. A measuring device need not previously measure the solution. The device is useful as an analytical device for rapid and easy analysis, and can be produced in a less number of steps because the reagent can be fixed by merely applying it onto a predetermined position.

Abstract: A method of measuring an analyte, comprising a step of measuring a detectable substance by using a reaction system including a formation reaction of the detectable substance based on a chemical reaction of the analyte contained in a sample, wherein a layered inorganic compound is caused to exist in the reaction system including the formation reaction of the detectable substance, whereby high-sensitivity measurement is made possible, the detectable substance can be stabilized to improve accuracy of the measurement, a rate of a chemical reaction is increased to enable quick measurement, and high-sensitivity measurement is made possible even in a reaction system which forms an insoluble substance.

Abstract: A method of measuring an analyte, comprising a step of measuring a detectable substance by using a reaction system including a formation reaction of the detectable substance based on a chemical reaction of the analyte contained in a sample, wherein a layered inorganic compound is caused to exist in the reaction system including the formation reaction of the detectable substance, whereby high-sensitivity measurement is made possible, the detectable substance can be stabilized to improve accuracy of the measurement, a rate of a chemical reaction is increased to enable quick measurement, and high-sensitivity measurement is made possible even in a reaction system which forms an insoluble substance.

Abstract: A method of measuring an analyte, comprising a step of measuring a detectable substance by using a reaction system including a formation reaction of the detectable substance based on a chemical reaction of the analyte contained in a sample, wherein a layered inorganic compound is caused to exist in the reaction system including the formation reaction of the detectable substance, whereby high-sensitivity measurement is made possible, the detectable substance can be stabilized to improve accuracy of the measurement, a rate of a chemical reaction is increased to enable quick measurement, and high-sensitivity measurement is made possible even in a reaction system which forms an insoluble substance.

Abstract: Described is a semiconductor device having a silicon oxide (SiO2) film into which nitrogen atoms, in a range between approximately 2×1020 atoms/cm3 or more and 2×1021 atoms/cm3 or less, are introduced, used as an insulator film in the semiconductor device. For example, the device can be a nonvolatile memory device, and the silicon oxide film can be used as an insulator film between, e.g., a floating gate electrode and control gate electrode of the nonvolatile memory device. Stable operations and a retention capability of a nonvolatile memory device are obtained even if the nonvolatile memory device is scaled. Moreover, a programming voltage can be lowered. Also described are methods of fabricating the semiconductor device.

Abstract: Described is a semiconductor device having a silicon oxide (SiO2) film into which nitrogen atoms, in a range between approximately 2×1020 atoms/cm3 or more and 2×1021 atoms/cm3 or less, are introduced, used as an insulator film in the semiconductor device. For example, the device can be a nonvolatile memory device, and the silicon oxide film can be used as an insulator film between, e.g., a floating gate electrode and control gate electrode of the nonvolatile memory device. Stable operations and a retention capability of a nonvolatile memory device are obtained even if the nonvolatile memory device is scaled. Moreover, a programming voltage can be lowered. Also described are methods of fabricating the semiconductor device.

Abstract: A method of measuring an analyte, comprising a step of measuring a detectable substance by using a reaction system including a formation reaction of the detectable substance based on a chemical reaction of the analyte contained in a sample, wherein a layered inorganic compound is caused to exist in the reaction system including the formation reaction of the detectable substance, whereby high-sensitivity measurement is made possible, the detectable substance can be stabilized to improve accuracy of the measurement, a rate of a chemical reaction is increased to enable quick measurement, and high-sensitivity measurement is made possible even in a reaction system which forms an insoluble substance.

Abstract: Described is a semiconductor device having a silicon oxide (SiO2) film into which nitrogen atoms, in a range between approximately 2×1020 atoms/cm3 or more and 2×1021 atoms/cm3 or less, are introduced, used as an insulator film in the semiconductor device. For example, the device can be a nonvolatile memory device, and the silicon oxide film can be used as an insulator film between, e.g., a floating gate electrode and control gate electrode of the nonvolatile memory device. Stable operations and a retention capability of a nonvolatile memory device are obtained even if the nonvolatile memory device is scaled. Moreover, a programming voltage can be lowered. Also described are methods of fabricating the semiconductor device.

Abstract: A method of measuring an analyte, comprising a step of measuring a detectable substance by using a reaction system including a formation reaction of the detectable substance based on a chemical reaction of the analyte contained in a sample, wherein a layered inorganic compound is caused to exist in the reaction system including the formation reaction of the detectable substance, whereby high-sensitivity measurement is made possible, the detectable substance can be stabilized to improve accuracy of the measurement, a rate of a chemical reaction is increased to enable quick measurement, and high-sensitivity measurement is made possible even in a reaction system which forms an insoluble substance.

Abstract: A method of measuring an analyte, comprising a step of measuring a detectable substance by using a reaction system including a formation reaction of the detectable substance based on a chemical reaction of the analyte contained in a sample, wherein a layered inorganic compound is caused to exist in the reaction system including the formation reaction of the detectable substance, whereby high-sensitivity measurement is made possible, the detectable substance can be stabilized to improve accuracy of the measurement, a rate of a chemical reaction is increased to enable quick measurement, and high-sensitivity measurement is made possible even in a reaction system which forms an insoluble substance.

Abstract: A method of measuring an analyte, comprising a step of measuring a detectable substance by using a reaction system including a formation reaction of the detectable substance based on a chemical reaction of the analyte contained in a sample, wherein a layered inorganic compound is caused to exist in the reaction system including the formation reaction of the detectable substance, whereby high-sensitivity measurement is made possible, the detectable substance can be stabilized to improve accuracy of the measurement, a rate of a chemical reaction is increased to enable quick measurement, and high-sensitivity measurement is made possible even in a reaction system which forms an insoluble substance.

Abstract: A method of measuring an analyte, comprising a step of measuring a detectable substance by using a reaction system including a formation reaction of the detectable substance based on a chemical reaction of the analyte contained in a sample, wherein a layered inorganic compound is caused to exist in the reaction system including the formation reaction of the detectable substance, whereby high-sensitivity measurement is made possible, the detectable substance can be stabilized to improve accuracy of the measurement, a rate of a chemical reaction is increased to enable quick measurement, and high-sensitivity measurement is made possible even in a reaction system which forms an insoluble substance.

Abstract: Described is a semiconductor device having a silicon oxide (SiO2) film into which nitrogen atoms, in a range between approximately 2×1020 atoms/cm3 or more and 2×1021 atoms/cm3 or less, are introduced, used as an insulator film in the semiconductor device. For example, the device can be a nonvolatile memory device, and the silicon oxide film can be used as an insulator film between, e.g., a floating gate electrode and control gate electrode of the nonvolatile memory device. Stable operations and a retention capability of a nonvolatile memory device are obtained even if the nonvolatile memory device is scaled. Moreover, a programming voltage can be lowered. Also described are methods of fabricating the semiconductor device.

Abstract: A method of measuring an analyte, comprising a step of measuring a detectable substance by using a reaction system including a formation reaction of the detectable substance based on a chemical reaction of the analyte contained in a sample, wherein a layered inorganic compound is caused to exist in the reaction system including the formation reaction of the detectable substance, whereby high-sensitivity measurement is made possible, the detectable substance can be stabilized to improve accuracy of the measurement, a rate of a chemical reaction is increased to enable quick measurement, and high-sensitivity measurement is made possible even in a reaction system which forms an insoluble substance.

Abstract: Described is a semiconductor device having a silicon oxide (SiO2) film into which nitrogen atoms, in a range between approximately 2×1020 atoms/cm3 or more and 2×1021 atoms/cm3 or less, are introduced, used as an insulator film in the semiconductor device. For example, the device can be a nonvolatile memory device, and the silicon oxide film can be used as an insulator film between, e.g., a floating gate electrode and control gate electrode of the nonvolatile memory device. Stable operations and a retention capability of a nonvolatile memory device are obtained even if the nonvolatile memory device is scaled. Moreover, a programming voltage can be lowered. Also described are methods of fabricating the semiconductor device.

Abstract: A test device 1 for analyzing a specific component in a test solution with a reagent by allowing the solution introduced via a feed opening 4 to react with the reagent maintained in a predetermined position in a capillary tube 3 having the opening 4 and an air outlet 5. The tube is provided with two hydrophilic regions 31,33 and a hydrophobic region 32. The region 31 transfers the solution from the opening 4 to the reagent. The region 33 is delimited to a predetermined area maintaining the reagent. The region 32 separates the region 31 from the region 33. The reagent and the solution are applied in predetermined amounts to the region 33. A measuring device need not previously measure the solution. The device is useful as an analytical device for rapid and easy analysis, and can be produced in a less number of steps because the reagent can be fixed by merely applying it onto a predetermined position.

Abstract: A test device 1 for analyzing a specific component in a test solution with a reagent by allowing the solution introduced via a feed opening 4 to react with the reagent maintained in a predetermined position in a capillary tube 3 having the opening 4 and an air outlet 5. The tube is provided with two hydrophilic regions 31, 33 and a hydrophobic region 32. The region 31 transfers the solution from the opening 4 to the reagent. The region 33 is delimited to a predetermined area maintaining the reagent. The region 32 separates the region 31 from the region 33. The reagent and the solution are applied in predetermined amounts to the region 33. A measuring device need not previously measure the solution. The device is useful as an analytical device for rapid and easy analysis, and can be produced in a less number of steps because the reagent can be fixed by merely applying it onto a predetermined position.

Abstract: Described is a semiconductor device having a silicon oxide (SiO2) film into which nitrogen atoms, in a range between approximately 2×1020 atoms/cm3 or more and 2×1021 atoms/cm3 or less, are introduced, used as an insulator film in the semiconductor device. For example, the device can be a nonvolatile memory device, and the silicon oxide film can be used as an insulator film between, e.g., a floating gate electrode and control gate electrode of the nonvolatile memory device. Stable operations and a retention capability of a nonvolatile memory device are obtained even if the nonvolatile memory device is scaled. Moreover, a programming voltage can be lowered. Also described are methods of fabricating the semiconductor device.

Abstract: Described is a semiconductor device having a silicon oxide (SiO2) film into which nitrogen atoms, in a range between approximately 2×1020 atoms/cm3 or more and 2×1021 atoms/cm3 or less, are introduced, used as an insulator film in the semiconductor device. For example, the device can be a nonvolatile memory device, and the silicon oxide film can be used as an insulator film between, e.g., a floating gate electrode and control gate electrode of the nonvolatile memory device. Stable operations and a retention capability of a nonvolatile memory device are obtained even if the nonvolatile memory device is scaled. Moreover, a programming voltage can be lowered. Also described are methods of fabricating the semiconductor device.

Abstract: Described is a semiconductor device having a silicon oxide (Sio2) film into which nitrogen atoms, in a range between approximately 2×1020 atoms/cm3 or more and 2×1021 atoms/cm3 or less, are introduced, used as an insulator film in the semiconductor device. For example, the device can be a nonvolatile memory device, and the silicon oxide film can be used as an insulator film between, e.g., a floating gate electrode and control gate electrode of the nonvolatile memory device. Stable operations and a retention capability of a nonvolatile memory device are obtained even if the nonvolatile memory device is scaled. Moreover, a programming voltage can be lowered. Also described are methods of fabricating the semiconductor device.