Patents by Inventor Atsuko Ogura

Atsuko Ogura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5319220
    Abstract: A silicon carbide semiconductor device is provided which includes at least one heterojunction composed of two different polytypes of silicon carbide. The two polytypes of silicon carbide in the heterojunction include a .beta.-type silicon carbide layer having an .alpha.-type silicon carbide layer disposed thereon.
    Type: Grant
    Filed: June 8, 1992
    Date of Patent: June 7, 1994
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Akira Suzuki, Katsuki Furukawa, Mitsuhiro Shigeta, Yoshihisa Fujii, Atsuko Ogura
  • Patent number: 5049950
    Abstract: A MIS structure is provided which uses a photoconductive amorphous silicon carbide layer as an insulator layer in the MIS structure. The insulator layer is disposed on an n-type layer of single crystal silicon carbide and a translucent metal layer is disposed thereon. The metal layer is biased with a negative voltage so that the capacitance between the metal layer and the semiconductor layer changes in response to whether on the metal layer is illuminated with light.
    Type: Grant
    Filed: August 9, 1990
    Date of Patent: September 17, 1991
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Yoshihisa Fujii, Mitsuhiro Shigeta, Katsuki Furukawa, Kenji Nakanishi, Atsuko Ogura