Abstract: Optically active &bgr;-type tris-(2,3-epoxypropyl)-isocyanurate is obtained by a method of reacting isocyanuric acid with an optically active epihalohydrin, or a method of optically resolving a racemic modification of tris-(2,3-epoxypropyl)-isocyanurate by using an amylose or cellulose derivative. It is a method for producing a high melting point type tris-(2,3-epoxypropyl)-isocyanurate obtained by mixing two enantiomers of optically active &bgr;-type tris-(2,3-epoxypropyl)-isocyanurate.

Abstract: Optically active &bgr;-type tris-(2,3-epoxypropyl)-isocyanurate is obtained by a method of reacting isocyanuric acid with an optically active epihalohydrin, or a method of optically resolving a racemic modification of tris-(2,3-epoxypropyl)-isocyanurate by using an amylose or cellulose derivative. It is a method for producing a high melting point type tris-(2,3-epoxypropyl)-isocyanurate obtained by mixing two enantiomers of optically active &bgr;-type tris-(2,3-epoxypropyl)-isocyanurate.

Abstract: Optically active &bgr;-type tris-(2,3-epoxypropyl)-isocyanurate is obtained by a method of reacting isocyanuric acid with an optically active epihalohydrin, or a method of optically resolving a racemic modification of tris-(2,3-epoxypropyl)-isocyanurate by using an amylose or cellulose derivative. It is a method for producing a high melting point type tris-(2,3-epoxypropyl)-isocyanurate obtained by mixing two enantiomers of optically active &bgr;-type tris-(2,3-epoxypropyl)-isocyanurate.

Abstract: .beta.-form tris-(2,3-epoxypropyl)-isocyanurate crystals containing from 2 to 15 wt % of .alpha.-form tris-(2,3-epoxypropyl)-isocyanurate in the interior of the crystals.

Abstract: A method for reducing an organic solvent remaining in tris-(2,3-epoxypropyl)-isocyanurate crystals, which comprises pulverizing crystal particles of tris-(2,3-epoxypropyl)-isocyanurate while evaporating a volatile component from the surface of the particles.

Abstract: A flame retardant thermoplastic resin composition which comprises 100 parts by weight of a thermoplastic resin, from 1 to 30 parts by weight of (A) at least one of polyhydric alcohol-boric acid metal complexes, from 15 to 30 parts by weight of (B) at least one of ammonium polyphosphate and melamine-modified ammonium polyphosphate, and from 3 to 30 parts by weight of (C) at least one of melamine and melamine derivatives.

Abstract: In forming a MISFET having a salicide structure, a polysilicon film forming a gate electrode in the MISFET is constructed of a first silicon film having a high n-type impurity concentration on the side of a gate insulating film and a second silicon film having a low n-type impurity concentration on the surface side of the gate electrode. Further, a Ti film is deposited on the second silicon film. The Ti film and the second silicon film are annealed twice at proper different temperatures to thereby promote a silicide reaction and form a low-resistance silicide layer in the second silicon film.

Abstract: Herein disclosed is an improved bipolar transistor manufacturing method which adopts an EBT (Epitaxial Base Transistor) structure using an SPESG (Selective Poly-and-Epitaxial-Silicon Growth) technique. Specifically, the method of manufacturing a bipolar transistor according to the present invention comprises the steps of: forming an isolation oxide layer to enclose an active region of a single crystal semiconductor substrate and to have a lower surface than that of the substrate of said active region; simultaneously forming a single crystal silicon layer over the substrate surface of said active region and a polycrystal silicon layer to become integral with said single crystal silicon layer over the surface of said isolation oxide layer by simultaneously growing silicon films over the substrate surface of said active region and the surface of said isolation oxide layer; and forming an active region of a semiconductor element in said single crystal silicon layer.