Abstract: A semiconductor module includes: an insulating resin layer; a wiring layer which is provided on one main surface of the insulating resin layer and which includes an external connection region; bump electrodes which are electrically connected to the wiring layer and each of which is formed such that it protrudes from the wiring layer toward the insulating resin layer; a semiconductor device which is provided on the other main surface of the insulating resin layer and which includes device electrodes connected to the bump electrode; and a wiring protection layer provided on the wiring layer and the insulating resin layer so as to expose the external connection region. In the semiconductor module, the outer edge portion of the wiring protection layer is in contact with the external edge portion of the semiconductor device such that it shields at least a part of the semiconductor resin layer at the side edge.

Abstract: A first circuit element and a second element are mounted with their electrode forming surfaces facing a wiring layer. A first bump electrode formed integrally with the wiring layer on one face substantially penetrates a first insulating resin layer. A gold plating layer covering an element electrode of the first circuit element and a gold plating layer disposed on top of the first bump electrode are bonded together by Au—Au bonding. A second bump electrode formed integrally with the wiring layer on one face substantially penetrates the first and the second insulating resin layer. A gold plating layer covering an element electrode of the second circuit element and a gold plating layer disposed on top of the second bump electrode are bonded together by Au—Au bonding.

Abstract: A semiconductor module includes: an insulating resin layer; a wiring layer which is provided on one main surface of the insulating resin layer and which includes an external connection region; bump electrodes which are electrically connected to the wiring layer and each of which is formed such that it protrudes from the wiring layer toward the insulating resin layer; a semiconductor device which is provided on the other main surface of the insulating resin layer and which includes device electrodes connected to the bump electrode; and a wiring protection layer provided on the wiring layer and the insulating resin layer so as to expose the external connection region. In the semiconductor module, the outer edge portion of the wiring protection layer is in contact with the external edge portion of the semiconductor device such that it shields at least a part of the semiconductor resin layer at the side edge.

Abstract: A first circuit element and a second element are mounted with their electrode forming surfaces facing a wiring layer. A first bump electrode formed integrally with the wiring layer on one face substantially penetrates a first insulating resin layer. A gold plating layer covering an element electrode of the first circuit element and a gold plating layer disposed on top of the first bump electrode are bonded together by Au—Au bonding. A second bump electrode formed integrally with the wiring layer on one face substantially penetrates the first and the second insulating resin layer. A gold plating layer covering an element electrode of the second circuit element and a gold plating layer disposed on top of the second bump electrode are bonded together by Au—Au bonding.

Abstract: A semiconductor module includes: an insulating resin layer; a wiring layer which is provided on one main surface of the insulating resin layer and which includes an external connection region; bump electrodes which are electrically connected to the wiring layer and each of which is formed such that it protrudes from the wiring layer toward the insulating resin layer; a semiconductor device which is provided on the other main surface of the insulating resin layer and which includes device electrodes connected to the bump electrode; and a wiring protection layer provided on the wiring layer and the insulating resin layer so as to expose the external connection region. In the semiconductor module, the outer edge portion of the wiring protection layer is in contact with the external edge portion of the semiconductor device such that it shields at least a part of the semiconductor resin layer at the side edge.