Abstract: A reflectivity of an end surface protective film of a semiconductor laser element is made less than or equal to 1% in a wide wavelength range. Semiconductor laser element includes semiconductor stack body having front end surface and rear end surface, and end surface protective film disposed on front end surface of semiconductor stack body. End surface protective film includes first dielectric layer disposed on front end surface and second dielectric layer stacked outside first dielectric layer. Second dielectric layer includes first layer stacked on first dielectric layer, second layer stacked on first layer, and third layer stacked on second layer. For wavelength ?, of a laser beam, refractive index n2 of second layer is higher than refractive index n1 of first layer and refractive index n3 of third layer, and a film thickness of second layer ranges from ?(8n2) to 3?(4n2) inclusive.

Abstract: A semiconductor laser element includes: a substrate; and a laser array portion that includes a plurality of light emitting portions arranged side by side, and is stacked above the substrate, wherein a stacked body of the substrate and the laser array portion includes a pair of resonator end faces on opposite faces, and a groove portion that extends from the laser array portion into the substrate is provided on at least one of the pair of resonator end faces between two adjacent light emitting portions among the plurality of light emitting portions.

Abstract: A semiconductor laser element includes: a substrate; and a laser array portion that includes a plurality of light emitting portions arranged side by side, and is stacked above the substrate, wherein a stacked body of the substrate and the laser array portion includes a pair of resonator end faces on opposite faces, and a groove portion that extends from the laser array portion into the substrate is provided on at least one of the pair of resonator end faces between two adjacent light emitting portions among the plurality of light emitting portions.

Abstract: Provided is a highly reliable nitride semiconductor laser element having a robust end face protection film not being peeled even in laser operation. The nitride semiconductor laser element includes: a semiconductor multi-layer structure including a group III nitride semiconductor and having a light-emitting end face; and a protection film including a dielectric multi-layer film and covering the light-emitting end face of the semiconductor multi-layer structure. The protection film includes an end face protection layer and an oxygen diffusion suppression layer arranged sequentially in stated order from the light-emitting end face. The end face protection layer includes a crystalline film comprising nitride including aluminum. The oxygen diffusion suppression layer has a structure in which a metal oxide film is between silicon oxide films. The metal oxide film is crystallized by laser light.

Abstract: A nitride semiconductor light-emitting element includes a layered semiconductor body which is made of a group III nitride semiconductor, and includes a light-emitting facet, and a multilayer protective film which is formed to cover the light-emitting facet of the layered semiconductor body, and includes a plurality of insulating films. The multilayer protective film includes a first protective film and a second protective film covering the first protective film. The first protective film is a crystalline film which is made of nitride containing aluminum, and is at least partially crystallized. The second protective film is a crystalline film which is made of oxide containing aluminum, and is at least partially crystallized.

Abstract: Provided is a highly reliable nitride semiconductor laser element having a robust end face protection film not being peeled even in laser operation. The nitride semiconductor laser element includes: a semiconductor multi-layer structure including a group III nitride semiconductor and having a light-emitting end face; and a protection film including a dielectric multi-layer film and covering the light-emitting end face of the semiconductor multi-layer structure. The protection film includes an end face protection layer and an oxygen diffusion suppression layer arranged sequentially in stated order from the light-emitting end face. The end face protection layer includes a crystalline film comprising nitride including aluminum. The oxygen diffusion suppression layer has a structure in which a metal oxide film is between silicon oxide films. The metal oxide film is crystallized by laser light.

Abstract: A nitride semiconductor light-emitting element includes a layered semiconductor body which is made of a group III nitride semiconductor, and includes a light-emitting facet, and a multilayer protective film which is formed to cover the light-emitting facet of the layered semiconductor body, and includes a plurality of insulating films. The multilayer protective film includes a first protective film and a second protective film covering the first protective film. The first protective film is a crystalline film which is made of nitride containing aluminum, and is at least partially crystallized. The second protective film is a crystalline film which is made of oxide containing aluminum, and is at least partially crystallized.

Abstract: A nitride semiconductor device includes a multilayer semiconductor structure made of a group III nitride semiconductor and having a light-emitting facet, and a first coating film formed to cover the light-emitting facet of the multilayer semiconductor structure. The first coating film is a crystalline film made of a nitride containing aluminum. The crystalline film is composed of a group of single domains, and the single domain is comprised of a group of grains whose crystal orientation planes have a same inclination angle and a same rotation angle. A length of a boundary between the domains per unit area is 7 ?m?1 or less.

Abstract: A nitride semiconductor laser device includes a multilayer structure including a plurality of nitride semiconductor layers including a light emitting layer, the multilayer structure having cavity facets facing each other, and a plurality of protective films made of a dielectric material provided on one of the cavity facets. The protective films include a first protective film, a second protective film and a third protective film. The first protective film contacts the cavity facet and is made of aluminum nitride. The second protective film is provided on a surface opposite to the cavity facet of the first protective film and is made of a material different from that of the first protective film. The third protective film is provided on a surface opposite to the first protective film of the second protective film and is made of the same material as that of the first protective film.

Abstract: A nitride semiconductor device includes a multilayer semiconductor structure made of a group III nitride semiconductor and having a light-emitting facet, and a first coating film formed to cover the light-emitting facet of the multilayer semiconductor structure. The first coating film is a crystalline film made of a nitride containing aluminum. The crystalline film is composed of a group of single domains, and the single domain is comprised of a group of grains whose crystal orientation planes have a same inclination angle and a same rotation angle. A length of a boundary between the domains per unit area is 7 ?m?1 or less.

Abstract: A nitride semiconductor light-emitting device includes a laminate structure formed of a plurality of nitride semiconductor layers including a light-emitting layer, and having cavity facets facing each other, a first protection film made of AlN, formed over a light-emitting facet of the cavity facets, and a second protection film made of Al2O3 having a refractive index of n1, formed thereon. The second protection film has a crystallized surface at least in a region facing a light-emitting region on the cavity facets; the thickness (t) of the second protection film satisfies ?/(2·n1)<t<3?/(4·n1) (where ? is a wavelength of the output light); and a second reflectance R(n2) (where n2 is a refractive index of crystallized Al2O3) of the light-emitting region in the cavity facets is lower than a first reflectance R(n1) of a region surrounding the light-emitting region in the cavity facets.

Abstract: A nitride semiconductor light emitting device includes a nitride semiconductor multilayer film. The nitride semiconductor multilayer film is formed on a substrate and made of nitride semiconductor crystals, and includes a light emitting layer. In the nitride semiconductor multilayer film, facets of a cavity are formed, and a protective film made of aluminum nitride crystals is formed on at least one of the facets. The protective film has a crystal plane whose crystal axes form an angle of 90 degrees with crystal axes of a crystal plane of the nitride semiconductor crystals constituting the facet of the cavity having the protective film formed thereon.

Abstract: A nitride semiconductor light emitting device includes: a multilayer structure a plurality of nitride semiconductor layers including a light emitting layer where the multilayer structure has cavity facets facing each other; and a plurality of protective films made of dielectric materials on at least one of the cavity facets. Among the plurality of protective films, a first protective film in contact with the cavity facet is made of a material containing no oxygen. A second protective film on a surface of the first protective film opposite to the cavity facet is made of a material containing aluminum lower in crystallization temperature than the first protective film. A third protective film on a surface of the second protective film opposite to the first protective film has an exposed surface and made of a material higher in crystallization temperature than the second protective film.

Abstract: A nitride semiconductor laser device includes a multilayer structure including a plurality of nitride semiconductor layers including a light emitting layer, the multilayer structure having cavity facets facing each other, and a plurality of protective films made of a dielectric material provided on one of the cavity facets. The protective films include a first protective film, a second protective film and a third protective film. The first protective film contacts the cavity facet and is made of aluminum nitride. The second protective film is provided on a surface opposite to the cavity facet of the first protective film and is made of a material different from that of the first protective film. The third protective film is provided on a surface opposite to the first protective film of the second protective film and is made of the same material as that of the first protective film.

Abstract: A nitride semiconductor light emitting device includes a nitride semiconductor multilayer film. The nitride semiconductor multilayer film is formed on a substrate and made of nitride semiconductor crystals, and includes a light emitting layer. In the nitride semiconductor multilayer film, facets of a cavity are formed, and a protective film made of aluminum nitride crystals is formed on at least one of the facets. The protective film has a crystal plane whose crystal axes form an angle of 90 degrees with crystal axes of a crystal plane of the nitride semiconductor crystals constituting the facet of the cavity having the protective film formed thereon.

Abstract: A semiconductor laser device includes a MQW active layer, a p-type cladding layer formed on the MQW active layer, having a ridge portion and having a smaller refractive index than that of the MQW active layer, a plurality of dielectric films formed at least on part of the p-type cladding layer extending from each side of the ridge portion.

Abstract: The invention provides a semiconductor laser device including an active layer, a semiconductor layer provided with a diffraction grating, an etch-stop layer, a cladding layer provided with a stripe structure, and a current blocking layer arranged at least on a side of said stripe structure, formed in that order on a substrate. In this semiconductor laser device, the etching-stop layer is formed on the semiconductor layer with the diffraction grating, so that damage of the diffraction grating due to etching can be prevented. The invention also provides a distributed Bragg reflection semiconductor laser device, including an active layer, and a current blocking layer having a stripe-shaped window and a diffraction grating formed at least near an end face thereof. This semiconductor laser device can be manufactured with fewer crystal growth processes than conventional semiconductor laser devices.

Abstract: A semiconductor laser device includes a MQW active layer, a p-type cladding layer formed on the MQW active layer, having a ridge portion and having a smaller refractive index than that of the MQW active layer, a plurality of dielectric films formed at least on part of the p-type cladding layer extending from each side of the ridge portion.

Abstract: An object of the present invention is to provide a semiconductor laser device that has a long life character and can improve the yield in manufacturing and its manufacturing method. The semiconductor laser device includes two cleavage planes 70 that form end surfaces of a resonator, a GaN substrate 1, a low temperature growth buffer layer 2 formed on the substrate 1 and a growth layer 3 formed on the low temperature growth buffer layer 2. The growth layer 3 has a ridge part 4 and plural grooves 7 is formed, more specifically, the ridge part 4 is formed on the region 3b of low threading dislocation density in the growth layer 3 and the grooves 7 are formed on the region 3a of high threading dislocation density that is the part except the ridge part 4 on the growth layer 3 so that the grooves extend from one of the cleavage plane to the other cleavage plane.

Abstract: The invention provides a semiconductor laser device including an active layer, a semiconductor layer provided with a diffraction grating, an etch-stop layer, a cladding layer provided with a stripe structure, and a current blocking layer arranged at least on a side of said stripe structure, formed in that order on a substrate. In this semiconductor laser device, the etching-stop layer is formed on the semiconductor layer with the diffraction grating, so that damage of the diffraction grating due to etching can be prevented. The invention also provides a distributed Bragg reflection semiconductor laser device, including an active layer, and a current blocking layer having a stripe-shaped window and a diffraction grating formed at least near an end face thereof. This semiconductor laser device can be manufactured with fewer crystal growth processes than conventional semiconductor laser devices.