Patents by Inventor Atsuo Fukumoto

Atsuo Fukumoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Boron-doped p-type single crystal silicon carbide semiconductor and process for preparing same
    Patent number: 6133120
    Abstract: A p-type silicon carbide semiconductor having a high carrier concentration and activation rate is provided by doping boron as an acceptor impurity in a single crystal silicon carbide. The boron occupies silicon sites in a crystal lattice of the single crystal silicon carbide.
    Type: Grant
    Filed: August 28, 1996
    Date of Patent: October 17, 2000
    Assignee: Nippondenso Co., Ltd.
    Inventors: Takeshi Miyajima, Norihito Tokura, Atsuo Fukumoto, Hidemitsu Hayashi