Abstract: Disclosed herein a thin film capacitor that includes a lower electrode layer, an upper electrode layer, and a dielectric layer disposed between the lower electrode layer and the upper electrode layer. The dielectric layer has a through hole. The upper electrode layer has a connection part connected to the lower electrode layer through the through hole and an electrode part insulated from the connection part by a slit. A surface of the lower electrode layer that contacts the connection part through the through hole includes an annular area positioned along an inner wall surface of the through hole and a center area surrounded by the annular area. The annular area is lower in surface roughness than the center area.

Abstract: Disclosed herein a thin film capacitor that includes a lower electrode layer, an upper electrode layer, and a dielectric layer disposed between the lower electrode layer and the upper electrode layer. The dielectric layer has a through hole. The upper electrode layer has a connection part connected to the lower electrode layer through the through hole and an electrode part insulated from the connection part by a slit. A surface of the lower electrode layer that contacts the connection part through the through hole includes an annular area positioned along an inner wall surface of the through hole and a center area surrounded by the annular area. The annular area is lower in surface roughness than the center area.

Abstract: Provided is a thin film capacitor that includes: a first electrode layer having a principal surface in which a plurality of recesses are provided; a dielectric layer laminated on the principal surface of the first electrode layer; and a second electrode layer laminated on the dielectric layer. When a depth of the recess is defined as FL and a thickness of the dielectric layer is defined as T, H/T is 0.05 or more and 0.5 or less.

Abstract: A piezoelectric layer made of potassium sodium niobate which is a perovskite type compound represented by the formula ABO3, wherein, in the Raman spectroscopy measurement of the piezoelectric layer which is performed while the piezoelectric layer is rotated in the in-plane direction, the measured intensity of the lattice vibration region of the perovskite type compound in the Raman spectrum obtained in polarized Raman spectroscopy measurement (yx) has a periodicity of approximately 90°, wherein, the polarized Raman spectroscopy measurement (yx) is performed while the piezoelectric layer is rotated in the in-plane direction and Raman scattering light is polarized in a direction perpendicular to that of the incident light.

Abstract: Provided is a thin film capacitor that includes: a first electrode layer having a principal surface in which a plurality of recesses are provided; a dielectric layer laminated on the principal surface of the first electrode layer; and a second electrode layer laminated on the dielectric layer. When a depth of the recess is defined as FL and a thickness of the dielectric layer is defined as T, H/T is 0.05 or more and 0.5 or less.

Abstract: A piezoelectric layer made of potassium sodium niobate which is a perovskite type compound represented by the formula ABO3, wherein, in the Raman spectroscopy measurement of the piezoelectric layer which is performed while the piezoelectric layer is rotated in the in-plane direction, the measured intensity of the lattice vibration region of the perovskite type compound in the Raman spectrum obtained in polarized Raman spectroscopy measurement (yx) has a periodicity of approximately 90°, wherein, the polarized Raman spectroscopy measurement (yx) is performed while the piezoelectric layer is rotated in the in-plane direction and Raman scattering light is polarized in a direction perpendicular to that of the incident light.