Abstract: An etching processing apparatus 1 has a transfer chamber 2, a plurality of processing chambers 3 and 4, and a plurality of cassette chambers 7 and 8. Inside the transfer chamber 2, a transfer mechanism 14 is provided. A control device 17 pauses the operation of the vacuum pump 16 after closing an opening/closing valve 15 of a vacuum evacuating mechanism, which vacuum evacuates the transfer chamber 2 in which the transfer mechanism 14 is provided, when the operation of the transfer mechanism 14 is paused for a predetermined time or longer. Accordingly, conservation of energy becomes possible without causing decrease of productivity.

Abstract: An etching processing apparatus 1 has a transfer chamber 2, a plurality of processing chambers 3 and 4, and a plurality of cassette chambers 7 and 8. Inside the transfer chamber 2, a transfer mechanism 14 is provided. A control device 17 pauses the operation of the vacuum pump 16 after closing an opening/closing valve 15 of a vacuum evacuating mechanism, which vacuum evacuates the transfer chamber 2 in which the transfer mechanism 14 is provided, when the operation of the transfer mechanism 14 is paused for a predetermined time or longer. Accordingly, conservation of energy becomes possible without causing decrease of productivity.

Abstract: An etching processing apparatus 1 has a transfer chamber 2, a plurality of processing chambers 3 and 4, and a plurality of cassette chambers 7 and 8. Inside the transfer chamber 2, a transfer mechanism 14 is provided. A control device 17 pauses the operation of the vacuum pump 16 after closing an opening/closing valve 15 of a vacuum evacuating mechanism, which vacuum evacuates the transfer chamber 2 in which the transfer mechanism 14 is provided, when the operation of the transfer mechanism 14 is paused for a predetermined time or longer. Accordingly, conservation of energy becomes possible without causing decrease of productivity.

Abstract: An etching processing apparatus 1 has a transfer chamber 2, a plurality of processing chambers 3 and 4, and a plurality of cassette chambers 7 and 8. Inside the transfer chamber 2, a transfer mechanism 14 is provided. A control device 17 pauses the operation of the vacuum pump 16 after closing an opening/closing valve 15 of a vacuum evacuating mechanism, which vacuum evacuates the transfer chamber 2 in which the transfer mechanism 14 is provided, when the operation of the transfer mechanism 14 is paused for a predetermined time or longer. Accordingly, conservation of energy becomes possible without causing decrease of productivity.

Abstract: A semiconductor device includes a semiconductor substrate, a trench including a narrowed portion and a main part, a diameter of the narrowed portion being coaxially smaller than a diameter of the trench at the main part, a first capacitor electrode provided in the semiconductor substrate so as to surround the trench inclusive of the narrowed portion, a capacitor insulating film provided along a surface of the first capacitor electrode, a second capacitor electrode provided inside the trench.

Abstract: Disclosed herein are a dry etching method and a dry etching apparatus. The method comprises a step of applying an etching inhibiting gas to that portion of a workpiece where etching speed is high, while the workpiece is being etched with reactive-gas plasma. The apparatus comprises functions for holding a reactive etching gas, a first electrode located within the gas-holding functions, for supporting a workpiece, a second electrode located within the gas-holding functions and spaced apart from the first electrode by a predetermined distance, functions for supplying high-frequency power, thereby to convert the reactive etching gas into a plasma in the space between the first and second electrodes, and functions for supplying an etching inhibiting gas to that portion of the workpiece where etching speed is high.

Abstract: A plasma etching apparatus has a first load-lock chamber, a process chamber connected to the first load-lock chamber through a gate valve, and a second load-lock chamber connected to the process chamber through another gate valve. A first processing section is provided to the process chamber to etch a wafer. A second processing section is provided to the second load-lock chamber to remove a reaction product generated during etching from the wafer. In the second processing section, an ultrasonic wave is applied to the wafer, thereby removing the reaction product from the wafer.

Abstract: Disclosed herein are a dry etching method and a dry etching apparatus. The method comprises a step of applying an etching inhibiting gas to that portion of a workpiece where etching speed is high, while the workpiece is being etched with reactive-gas plasma. The apparatus comprises functions for holding a reactive etching gas, a first electrode located within the gas-holding functions, for supporting a workpiece, a second electrode located within the gas-holding functions and spaced apart from the first electrode by a predetermined distance, functions for supplying high-frequency power, thereby to convert the reactive etching gas into a plasma in the space between the first and second electrodes, and functions for supplying an etching inhibiting gas to that portion of the workpiece where etching speed is high.