Abstract: A solar cell manufacturing method includes a step of forming a diffusion layer including a first section and a second section on a light-receiving side of a semiconductor substrate, where the first section has a first concentration of impurities, and the second section has a second concentration of the impurities that is higher than the first concentration, a step of irradiating the diffusion layer with detection light that is reflected at a higher reflectivity on the first section than on the second section, and a step of detecting the first section that corresponds to a first reflectivity, and the second section that corresponds to a second reflectivity that is lower than the first reflectivity in the diffusion layer on the basis of a difference in reflectivity of the detection light reflected off the respective sections of the diffusion layer.

Abstract: A solar cell manufacturing method includes a step of forming a diffusion layer including a first section and a second section on a light-receiving side of a semiconductor substrate, where the first section has a first concentration of impurities, and the second section has a second concentration of the impurities that is higher than the first concentration, a step of irradiating the diffusion layer with detection light that is reflected at a higher reflectivity on the first section than on the second section, and a step of detecting the first section that corresponds to a first reflectivity, and the second section that corresponds to a second reflectivity that is lower than the first reflectivity in the diffusion layer on the basis of a difference in reflectivity of the detection light reflected off the respective sections of the diffusion layer.

Abstract: A solar cell includes: a first-conductivity-type semiconductor substrate that includes an impurity diffusion layer on one surface side, which is a light receiving surface side, the impurity diffusion layer having a second-conductivity-type impurity element diffused therein; a plurality of linear light-receiving-surface-side electrodes that are a paste electrode that has a multi-layered structure, is formed by multi-layer printing of an electrode material paste on the one surface side, and is electrically connected to the impurity diffusion layer and that extend in parallel in a specific direction in a plane direction of the semiconductor substrate; and a back-surface-side electrode that is formed on another surface side of the semiconductor substrate. In the light-receiving-surface-side electrodes, the light-receiving-surface-side electrodes get smaller in width as they get closer in a width direction of the light-receiving-surface-side electrodes to a specific reference position.

Abstract: A solar cell includes a p-type impurity diffusion layer formed on one side of an n-type single-crystal silicon substrate, an n-type impurity diffusion layer formed on the opposite side of the substrate with an n-type impurity element at a higher concentration than the substrate, and having a first layer with an n-type impurity element diffused at a first concentration, and a second layer with an n-type impurity element diffused at a second concentration lower than the first concentration, on-p-type-impurity-diffusion-layer electrodes formed on the p-type impurity diffusion layer, and on-n-type-impurity-diffusion-layer electrodes formed on the first layer. The concentration of the n-type impurity element at a surface of the first layer is between 5×1020 atoms/cm3 and 2×1021 atoms/cm3 inclusive, and the concentration of the n-type impurity element at a surface of the second layer is between 5×1019 atoms/cm3 and 2×1020 atoms/cm3 inclusive.

Abstract: A solar cell includes: a first-conductivity-type semiconductor substrate that includes an impurity diffusion layer on one surface side, which is a light receiving surface side, the impurity diffusion layer having a second-conductivity-type impurity element diffused therein; a plurality of linear light-receiving-surface-side electrodes that are a paste electrode that has a multi-layered structure, is formed by multi-layer printing of an electrode material paste on the one surface side, and is electrically connected to the impurity diffusion layer and that extend in parallel in a specific direction in a plane direction of the semiconductor substrate; and a back-surface-side electrode that is formed on another surface side of the semiconductor substrate. In the light-receiving-surface-side electrodes, the light-receiving-surface-side electrodes get smaller in width as they get closer in a width direction of the light-receiving-surface-side electrodes to a specific reference position.

Abstract: An n-type impurity diffusion layer includes a plurality of linear first n-type impurity diffusion layers and a second n-type impurity diffusion layer. The first n-type impurity diffusion layers extend in parallel in a specific direction, are disposed in a lower region under surface silver grid electrodes and a peripheral region that extends from the lower region, and contain an impurity element at a first concentration. The second n-type impurity diffusion layer contains the impurity element at a second concentration, which is lower than the first concentration. In the first n-type impurity diffusion layers, the first n-type impurity diffusion layers get smaller in width as they get closer in a width direction of the first n-type impurity diffusion layers to a specific reference position.

Abstract: A plasma deposition apparatus that includes a high-frequency electrode caused to face a deposition target and a ground electrode connected to the deposition target, and deposits a film on the deposition target by using plasma generated between the high-frequency electrode and the ground electrode, wherein the high-frequency electrode includes a first high-frequency electrode caused to face a first deposition target surface of the deposition target, and a second high-frequency electrode caused to face a second deposition target surface on the opposite side of the first deposition target surface, and the first high-frequency electrode, the second high-frequency electrode, and the ground electrode generate plasma between the first high-frequency electrode and the ground electrode for performing deposition on the first deposition target surface and plasma between the second high-frequency electrode and the ground electrode for performing deposition on the second deposition target surface at the same time.

Abstract: A plasma deposition apparatus that includes a high-frequency electrode caused to face a deposition target and a ground electrode connected to the deposition target, and deposits a film on the deposition target by using plasma generated between the high-frequency electrode and the ground electrode, wherein the high-frequency electrode includes a first high-frequency electrode caused to face a first deposition target surface of the deposition target, and a second high-frequency electrode caused to face a second deposition target surface on the opposite side of the first deposition target surface, and the first high-frequency electrode, the second high-frequency electrode, and the ground electrode generate plasma between the first high-frequency electrode and the ground electrode for performing deposition on the first deposition target surface and plasma between the second high-frequency electrode and the ground electrode for performing deposition on the second deposition target surface at the same time.

Abstract: Forming an impurity diffusion layer of the second conductivity type and an antireflective film on one surface side of a semiconductor substrate of the first conductivity type; applying the first electrode material onto the antireflective film; forming a passivation film on the other surface side of the semiconductor substrate; forming openings in the passivation film to reach the other surface side; applying a second electrode material containing impurity elements of the first conductive type to fill the openings and not to be in contact with the second electrode material of adjacent openings; applying a third electrode material onto the passivation film to be in contact with the entire second electrode material; forming at a time, by heating the semiconductor substrate at a predetermined temperature after applying the first electrode material and the third electrode material, the first electrodes, a high-concentration region, and the second electrodes and third electrode.

Abstract: Forming an impurity diffusion layer of the second conductivity type and an antireflective film on one surface side of a semiconductor substrate of the first conductivity type; applying the first electrode material onto the antireflective film; forming a passivation film on the other surface side of the semiconductor substrate; forming openings in the passivation film to reach the other surface side; applying a second electrode material containing impurity elements of the first conductive type to fill the openings and not to be in contact with the second electrode material of adjacent openings; applying a third electrode material onto the passivation film to be in contact with the entire second electrode material; forming at a time, by heating the semiconductor substrate at a predetermined temperature after applying the first electrode material and the third electrode material, the first electrodes, a high-concentration region, and the second electrodes and third electrode.