Patents by Inventor Atsuro Seino

Atsuro Seino has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200335328
    Abstract: There is provided a process of forming a film containing a metal element, an additional element different from the metal element and at least one of nitrogen and carbon on a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (a) supplying a first precursor gas containing the metal element and a second precursor gas containing the additional element to the substrate so that supply periods of the first precursor gas and the second precursor gas at least partially overlap with each other; and (b) supplying a reaction gas containing the at least one of nitrogen and carbon to the substrate.
    Type: Application
    Filed: July 1, 2020
    Publication date: October 22, 2020
    Applicant: KOKUSAI ELECTRIC CORPORATION
    Inventors: Arito OGAWA, Atsuro SEINO
  • Patent number: 10734218
    Abstract: There is provided a process of forming a film containing a metal element, an additional element different from the metal element and at least one of nitrogen and carbon on a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (a) supplying a first precursor gas containing the metal element and a second precursor gas containing the additional element to the substrate so that supply periods of the first precursor gas and the second precursor gas at least partially overlap with each other; and (b) supplying a reaction gas containing the at least one of nitrogen and carbon to the substrate.
    Type: Grant
    Filed: September 18, 2018
    Date of Patent: August 4, 2020
    Assignee: KOKUSAI ELECTRIC CORPORATION
    Inventors: Arito Ogawa, Atsuro Seino
  • Publication number: 20200194269
    Abstract: There is provided a method of manufacturing a semiconductor device, including forming a metal nitride film substantially not containing a silicon atom on a substrate by sequentially repeating: (a) supplying a metal-containing gas and a reducing gas, which contains silicon and hydrogen and does not contain a halogen, to the substrate in a process chamber by setting an internal pressure of the process chamber to a value which falls within a range of 130 Pa to less than 3,990 Pa during at least the supply of the reducing gas, wherein (a) includes a timing of simultaneously supplying the metal-containing gas and the reducing gas; (b) removing the metal-containing gas and the reducing gas that remain in the process chamber; (c) supplying a nitrogen-containing gas to the substrate; and (d) removing the nitrogen-containing gas remaining in the process chamber.
    Type: Application
    Filed: February 25, 2020
    Publication date: June 18, 2020
    Applicant: KOKUSAI ELECTRIC CORPORATION
    Inventors: Arito OGAWA, Atsuro SEINO
  • Patent number: 10410870
    Abstract: A technique capable of controlling in-plane uniformity of a film formed on a substrate includes a step of forming a film on a substrate by performing a predetermined number of cycles in which a step of supplying a metal-containing gas to the substrate and a step of supplying a reducing gas containing an element that becomes a solid by itself to the substrate are performed in a time-division manner. The reducing gas has a property of changing a deposition rate of the film from an increasing rate to a decreasing rate in accordance with the exposure amount of the reducing gas with respect to the substrate. In the step of supplying the reducing gas, the exposure amount of the reducing gas with respect to the substrate is adjusted in accordance with the property of the reducing gas.
    Type: Grant
    Filed: March 19, 2018
    Date of Patent: September 10, 2019
    Assignee: KOKUSA ELECTRIC CORPORATION
    Inventors: Atsuro Seino, Arito Ogawa
  • Publication number: 20190019673
    Abstract: There is provided a process of forming a film containing a metal element, an additional element different from the metal element and at least one of nitrogen and carbon on a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (a) supplying a first precursor gas containing the metal element and a second precursor gas containing the additional element to the substrate so that supply periods of the first precursor gas and the second precursor gas at least partially overlap with each other; and (b) supplying a reaction gas containing the at least one of nitrogen and carbon to the substrate.
    Type: Application
    Filed: September 18, 2018
    Publication date: January 17, 2019
    Applicant: KOKUSAI ELECTRIC CORPORATION
    Inventors: Arito OGAWA, Atsuro SEINO
  • Publication number: 20180211843
    Abstract: A technique capable of controlling in-plane uniformity of a film formed on a substrate includes a step of forming a film on a substrate by performing a predetermined number of cycles in which a step of supplying a metal-containing gas to the substrate and a step of supplying a reducing gas containing an element that becomes a solid by itself to the substrate are performed in a time-division manner. The reducing gas has a property of changing a deposition rate of the film from an increasing rate to a decreasing rate in accordance with the exposure amount of the reducing gas with respect to the substrate. In the step of supplying the reducing gas, the exposure amount of the reducing gas with respect to the substrate is adjusted in accordance with the property of the reducing gas.
    Type: Application
    Filed: March 19, 2018
    Publication date: July 26, 2018
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Atsuro SEINO, Arito OGAWA
  • Patent number: 9970107
    Abstract: A technique for forming a metal film having a high work function while suppressing an increase in EOT is provided. According to the technique, there is provided a method of manufacturing a semiconductor device, including: (a) performing a first cycle a first number of times to form a first metal layer containing a first metal element; and (b) performing a second cycle to form a second metal layer containing a second metal element directly on the first metal layer, wherein a binding energy of second metal element with oxygen is higher than that of the first metal element with oxygen, wherein a cycle including (a) and (b) is performed a second number of times to form a conductive film containing the first metal element and the second metal element on a substrate, the conductive film having: a work function higher than the first metal layer; and a binding energy with oxygen higher than that of the first metal element with oxygen.
    Type: Grant
    Filed: August 9, 2017
    Date of Patent: May 15, 2018
    Assignee: Hitachi Kokusai Electric Inc.
    Inventors: Arito Ogawa, Atsuro Seino
  • Patent number: 9972500
    Abstract: The present invention is provided to improve quality or manufacturing throughput of a semiconductor device. A method includes supplying a source gas to a substrate in a process chamber; exhausting an inside of the process chamber; supplying a reaction gas to the substrate; and exhausting the inside of the process chamber, wherein the source gas and/or the reaction gas is supplied in temporally separated pulses in the supply of the source gas and/or in the supply of the reaction gas. Then, the source gas and/or the reaction gas is supplied in temporally separated pulses to form a film during a gas supply time determined by a concentration distribution of by-products formed on a surface of the substrate.
    Type: Grant
    Filed: October 26, 2016
    Date of Patent: May 15, 2018
    Assignee: Hitachi Kokusai Electric, Inc.
    Inventors: Yukinao Kaga, Arito Ogawa, Atsuro Seino, Atsuhiko Ashitani, Ryohei Maeno, Masanori Sakai
  • Patent number: 9966268
    Abstract: Provided are a method of manufacturing a semiconductor device capable of forming a high-quality film having low roughness and resistivity and a substrate processing apparatus and program. The method includes (a) forming an amorphous metal film on a substrate while maintaining the substrate by performing steps (a-1) and (a-2) in a time-divisional manner wherein the step (a-1) includes supplying in the time-divisional manner a metal-containing gas and a first reducing gas to the substrate a predetermined number of times to form a first amorphous metal film on the substrate, and the step (a-2) includes simultaneously supplying the metal-containing gas and a second reducing gas to the substrate having the first amorphous metal film formed thereon to form a second amorphous metal film on the first amorphous metal film; and (b) heating the substrate having the amorphous metal film formed thereon to.
    Type: Grant
    Filed: September 30, 2014
    Date of Patent: May 8, 2018
    Assignee: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Arito Ogawa, Atsuro Seino
  • Publication number: 20180080122
    Abstract: A technique for forming a metal film having a high work function while suppressing an increase in EOT is provided. According to the technique, there is provided a method of manufacturing a semiconductor device, including: (a) performing a first cycle a first number of times to form a first metal layer containing a first metal element; and (b) performing a second cycle to form a second metal layer containing a second metal element directly on the first metal layer, wherein a binding energy of second metal element with oxygen is higher than that of the first metal element with oxygen, wherein a cycle including (a) and (b) is performed a second number of times to form a conductive film containing the first metal element and the second metal element on a substrate, the conductive film having: a work function higher than the first metal layer; and a binding energy with oxygen higher than that of the first metal element with oxygen.
    Type: Application
    Filed: August 9, 2017
    Publication date: March 22, 2018
    Inventors: Arito OGAWA, Atsuro SEINO
  • Patent number: 9653351
    Abstract: A method of manufacturing a semiconductor device may include: (a) loading a substrate into a process chamber, the substrate having: a process surface provided with a first metal film containing at least a first metal element; (b) forming a second metal film on the substrate loaded in the process chamber by alternately supplying a metal compound and a first reactive gas reactive with the metal compound to the substrate a plurality of times; (c) alternately performing steps (c-1) and (c-2) a plurality of times wherein the step (c-1) includes: forming an amorphous third metal film on the second metal film, and the step (c-2) includes: forming a fourth metal film on the third metal film; and (d) forming an amorphous fifth metal film on the fourth metal film by supplying the metal compound mixed with the second reactive gas to the substrate.
    Type: Grant
    Filed: September 22, 2016
    Date of Patent: May 16, 2017
    Assignee: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Arito Ogawa, Atsuro Seino
  • Publication number: 20170047227
    Abstract: The present invention is provided to improve quality or manufacturing throughput of a semiconductor device. A method includes supplying a source gas to a substrate in a process chamber; exhausting an inside of the process chamber; supplying a reaction gas to the substrate; and exhausting the inside of the process chamber, wherein the source gas and/or the reaction gas is supplied in temporally separated pulses in the supply of the source gas and/or in the supply of the reaction gas. Then, the source gas and/or the reaction gas is supplied in temporally separated pulses to form a film during a gas supply time determined by a concentration distribution of by-products formed on a surface of the substrate.
    Type: Application
    Filed: October 26, 2016
    Publication date: February 16, 2017
    Inventors: Yukinao KAGA, Arito OGAWA, Atsuro SEINO, Atsuhiko ASHITANI, Ryohei MAENO, Masanori SAKAI
  • Publication number: 20170011958
    Abstract: A method of manufacturing a semiconductor device may include: (a) loading a substrate into a process chamber, the substrate having: a process surface provided with a first metal film containing at least a first metal element; (b) forming a second metal film on the substrate loaded in the process chamber by alternately supplying a metal compound and a first reactive gas reactive with the metal compound to the substrate a plurality of times; (c) alternately performing steps (c-1) and (c-2) a plurality of times wherein the step (c-1) includes: forming an amorphous third metal film on the second metal film, and the step (c-2) includes: forming a fourth metal film on the third metal film; and (d) forming an amorphous fifth metal film on the fourth metal film by supplying the metal compound mixed with the second reactive gas to the substrate.
    Type: Application
    Filed: September 22, 2016
    Publication date: January 12, 2017
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Arito OGAWA, Atsuro SEINO
  • Patent number: 9508555
    Abstract: To improve quality or manufacturing throughput of a semiconductor device, a method includes supplying a source gas to a substrate in a process chamber; exhausting an inside of the process chamber; supplying a reaction gas to the substrate; and exhausting the inside of the process chamber, wherein the source gas and/or the reaction gas is supplied in temporally separated pulses in the supply of the source gas and/or in the supply of the reaction gas. Then, the source gas and/or the reaction gas is supplied in temporally separated pulses to form a film during a gas supply time determined by a concentration distribution of by-products formed on a surface of the substrate.
    Type: Grant
    Filed: March 26, 2014
    Date of Patent: November 29, 2016
    Assignee: Hitachi Kokusai Electric, Inc.
    Inventors: Yukinao Kaga, Arito Ogawa, Atsuro Seino, Atsuhiko Ashitani, Ryohei Maeno, Masanori Sakai
  • Publication number: 20150111378
    Abstract: [PROBLEMS TO BE SOLVED] The present invention provides a method of manufacturing a semiconductor device, which is capable of forming a film having low roughness and resistivity by suppressing a void from being generated during the forming of the film, a substrate processing apparatus and a program.
    Type: Application
    Filed: September 30, 2014
    Publication date: April 23, 2015
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Arito OGAWA, Atsuro SEINO
  • Publication number: 20140295667
    Abstract: To improve quality or manufacturing throughput of a semiconductor device, a method includes supplying a source gas to a substrate in a process chamber; exhausting an inside of the process chamber; supplying a reaction gas to the substrate; and exhausting the inside of the process chamber, wherein the source gas and/or the reaction gas is supplied in temporally separated pulses in the supply of the source gas and/or in the supply of the reaction gas. Then, the source gas and/or the reaction gas is supplied in temporally separated pulses to form a film during a gas supply time determined by a concentration distribution of by-products formed on a surface of the substrate.
    Type: Application
    Filed: March 26, 2014
    Publication date: October 2, 2014
    Applicant: Hitachi Kokusai Electric Inc.
    Inventors: Yukinao Kaga, Arito Ogawa, Atsuro Seino, Atsuhiko Ashitani, Ryohei Maeno, Masanori Sakai