Patents by Inventor Atsushi Hasuike

Atsushi Hasuike has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device
    Patent number: 9070707
    Abstract: A semiconductor device includes: a substrate; a semiconductor layer composed of GaN-based compound semiconductor on the substrate; a source electrode, a gate electrode, and a drain electrode on the substrate; and an additive substance added to the semiconductor layer. The additive substance serves as a luminescent center within the semiconductor layer. Charge trapped at an energy level in the semiconductor layer is released and recombined by light generated from the luminescent center.
    Type: Grant
    Filed: September 18, 2013
    Date of Patent: June 30, 2015
    Assignee: MITSUBISHI ELECTRIC CORPORATION
    Inventor: Atsushi Hasuike
  • SEMICONDUCTOR DEVICE
    Publication number: 20140167081
    Abstract: A semiconductor device includes: a substrate; a semiconductor layer composed of GaN-based compound semiconductor on the substrate; a source electrode, a gate electrode, and a drain electrode on the substrate; and an additive substance added to the semiconductor layer. The additive substance serves as a luminescent center within the semiconductor layer. Charge trapped at an energy level in the semiconductor layer is released and recombined by light generated from the luminescent center.
    Type: Application
    Filed: September 18, 2013
    Publication date: June 19, 2014
    Applicant: Mitsubishi Electric Corporation
    Inventor: Atsushi Hasuike
  • Method of manufacturing semiconductor device
    Publication number: 20050282320
    Abstract: A method of manufacturing a semiconductor device includes forming a gate electrode on a semiconductor substrate, forming a resist on the semiconductor substrate so that the resist contacts only one side face of the gate electrode, and tilting the gate electrode by shrinking or expanding the resist.
    Type: Application
    Filed: November 12, 2004
    Publication date: December 22, 2005
    Applicant: Mitsubishi Denki Kabushiki Kaisha
    Inventor: Atsushi Hasuike