Abstract: A wheel cleaning system for an autonomous driving apparatus includes the autonomous driving apparatus with wheels, capable of driving autonomously based on peripheral information, and a cleaning area for cleaning the wheels. The cleaning area has a cleaning mat for cleaning the wheels as the wheels turn to rub against the mat. The autonomous driving apparatus has a controller for controlling an operation of the autonomous driving apparatus so as to perform a cleaning process of the wheels in the cleaning area.

Abstract: A semiconductor laser device includes, on an n-type GaAs substrate, an n-type GaAs contact layer, an n-type first quantum well heterobarrier layer, an n-type AlGaInP cladding layer, a strained quantum well active layer (a first guide layer, GaInP well layers, AlGaInP barrier layers, and a second guide layer), a p-type AlGaInP cladding layer, a p-type GaInP intermediate layer, and a p-type GaAs contact layer, which are formed in this stated order. The semiconductor laser device can perform high-temperature and high-power operation at a lower operating voltage.

Abstract: A semiconductor light emitting device includes a first cladding layer 112, an active layer 113, a second cladding layer 114, and a contact layer 117 all of which are formed above a substrate. Between the second cladding layer 114 and the contact layer 117, there is formed a quantum well hetero barrier layer 116 including contact barrier layers 116b and contact well layers 116w. The contact well layers 116w are a first contact well layer 116w formed closer to the contact layer and a second contact well layer 116w3 formed closer to the second cladding layer.

Abstract: A semiconductor laser device includes a semiconductor layer including an active layer. The active layer includes: a gain region; an end face window region formed in a region of the active layer including an end face of the semiconductor layer, and having a larger band gap energy than the gain region; and a transition region formed between the gain region and the end face window region. The band gap energy of the transition region continuously changes from the band gap energy of the gain region to that of the end face window region. The gain region and a portion of the transition region located near the gain region form a current injection portion into which current is injected. The end face window region and a portion of the transition region located near the end face window region form a current non-injection portion into which current is prevented from being injected.

Abstract: The copolymer latex for non-contact coating of the present invention is obtained by emulsion polymerization of a monomer containing from 23 to 58% by mass of an aliphatic conjugated diene monomer, from 0.1 to 7% by mass of an ethylenic unsaturated carboxylic acid monomer, from 5 to 40% by mass of a vinyl cyanide compound, and from 0 to 71.9% by mass of other monomer capable of being copolymerized with the other monomers (provided that the total amount of the monomers is 100% by mass), and polymer particles contained in the latex have an average particle diameter of from 50 to 150 nm. A coating composition for paper containing the latex, a pigment and the like is suitable for a non-contact coating method, such as a curtain coater and a spray, to obtain coated paper excellent in surface strength, printing gloss and the like with good runnability.

Abstract: The switching circuitry topology is arranged so that the transistors operate in a 1E mode, that is, the voltage across the switching transistors is no greater than the input voltage (E) and at the same time the noise voltage normally generated in regulating circuit arrangements employing transistor switching is greatly reduced. A filter inductor in the primary switching circuit protects the switching transistors from sudden current changes during overload and enables operation of the transistors below the 2E mode. Power is regulated by pulse width control of the switching transistors. One pair of switching transistors is arranged to control the direction of current through the transformer primary winding. Another pair of transistors is arranged for controlling the current in accordance with the width of applied switching pulses.

Abstract: Standard configuration a.c. power transformer core sections are combined with standard configuration solenoid winding sections to provide a saturable core transformer which is arranged to be driven into saturation by applied alternating and direct current energy with the control of variations in flux changes up to saturation exercised by the direct current flow. A center tapped primary winding is arranged on an I-shaped stack of transformer iron laminations for full-wave excitation. A C-shaped stack of laminations is arranged adjacent to the I-shaped stack and separated by an air gap whereby the primary winding also serves as an input filter choke. The core structure is completed by an E-shaped stack of laminations arranged adjacent to the I-shaped stack and separated by another air gap. Two solenoid windings are arranged on the outer legs of the E-shaped stack and connected to a capacitor for resonating the overall ferroresonant transformer circuit arrangement.