Patents by Inventor Atsushi Ikari
Atsushi Ikari has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 11551915Abstract: Provided are a method of manufacturing a ring-shaped member and the ring-shaped member. A method of manufacturing a ring-shaped member to be placed in a process chamber of a substrate processing apparatus includes arranging one silicon member and another silicon member to cause one abutting surface of the one silicon member and another abutting surface of the other silicon member to abut on each other, heating the one abutting surface and the other abutting surface through optical heating to melt silicon on a surface of the one abutting surface and silicon on a surface of the other abutting surface such that silicon melt is caused to flow into a gap between the one abutting surface and the other abutting surface, and cooling the one abutting surface and the other abutting surface to crystallize the silicon melt forming a silicon adhesion part.Type: GrantFiled: March 21, 2021Date of Patent: January 10, 2023Assignee: THINKON NEW TECHNOLOGY JAPAN CORPORATIONInventors: Atsushi Ikari, Satoshi Fujii
-
Patent number: 11545345Abstract: Provided is a protective material ring in which a plurality of silicon members are joined. A protective material ring is to be installed in a treatment chamber of a substrate treatment apparatus performing plasma treatment on a substrate, and the substrate is accommodated in the treatment chamber. The protective material ring includes: three or more silicon members; and a joining part joining the silicon members. The joining part contains boron oxide.Type: GrantFiled: March 7, 2018Date of Patent: January 3, 2023Assignee: THINKON NEW TECHNOLOGY JAPAN CORPORATIONInventors: Atsushi Ikari, Satoshi Fujii
-
Patent number: 11380525Abstract: A ring for an electrode includes three or more silicon members having an arc shape and a joining part joining the silicon members. The joining part contains boron oxide. A clean copy of the amended abstract is provided in Exhibit A of this preliminary amendment.Type: GrantFiled: July 28, 2017Date of Patent: July 5, 2022Assignee: THINKON NEW TECHNOLOGY JAPAN CORPORATIONInventors: Atsushi Ikari, Satoshi Fujii
-
Patent number: 11348764Abstract: Provided is a ring for an electrode in which a plurality of silicon members is joined. The ring for the electrode includes a plurality of first silicon members abutted in one direction, an embedded silicon member that is embedded at a position across the plurality of first silicon members abutted, and a joining part joining the plurality of first silicon members and the embedded silicon member, the joining part provided between the plurality of first silicon members and the embedded silicon member.Type: GrantFiled: February 16, 2018Date of Patent: May 31, 2022Assignee: THINKON NEW TECHNOLOGY JAPAN CORPORATIONInventors: Atsushi Ikari, Satoshi Fujii
-
Publication number: 20210225617Abstract: Provided are a method of manufacturing a ring-shaped member and the ring-shaped member. A method of manufacturing a ring-shaped member to be placed in a process chamber of a substrate processing apparatus includes arranging one silicon member and another silicon member to cause one abutting surface of the one silicon member and another abutting surface of the other silicon member to abut on each other, heating the one abutting surface and the other abutting surface through optical heating to melt silicon on a surface of the one abutting surface and silicon on a surface of the other abutting surface such that silicon melt is caused to flow into a gap between the one abutting surface and the other abutting surface, and cooling the one abutting surface and the other abutting surface to crystallize the silicon melt forming a silicon adhesion part.Type: ApplicationFiled: March 21, 2021Publication date: July 22, 2021Inventors: Atsushi Ikari, Satoshi Fujii
-
Patent number: 10984988Abstract: Provided are a method of manufacturing a ring-shaped member and the ring-shaped member. A method of manufacturing a ring-shaped member to be placed in a process chamber of a substrate processing apparatus includes arranging one silicon member and another silicon member to cause one abutting surface of the one silicon member and another abutting surface of the other silicon member to abut on each other, heating the one abutting surface and the other abutting surface through optical heating to melt silicon on a surface of the one abutting surface and silicon on a surface of the other abutting surface such that silicon melt is caused to flow into a gap between the one abutting surface and the other abutting surface, and cooling the one abutting surface and the other abutting surface to crystallize the silicon melt forming a silicon adhesion part.Type: GrantFiled: March 7, 2018Date of Patent: April 20, 2021Assignee: THINKON NEW TECHNOLOGY JAPAN CORPORATIONInventors: Atsushi Ikari, Satoshi Fujii
-
Publication number: 20200365376Abstract: Provided is a protective material ring in which a plurality of silicon members are joined. A protective material ring is to be installed in a treatment chamber of a substrate treatment apparatus performing plasma treatment on a substrate, and the substrate is accommodated in the treatment chamber. The protective material ring includes: three or more silicon members; and a joining part joining the silicon members. The joining part contains boron oxide.Type: ApplicationFiled: March 7, 2018Publication date: November 19, 2020Inventors: Atsushi Ikari, Satoshi Fujii
-
Publication number: 20200194237Abstract: Provided is a ring for an electrode in which a plurality of silicon members is joined. The ring for the electrode includes a plurality of first silicon members abutted in one direction, an embedded silicon member that is embedded at a position across the plurality of first silicon members abutted, and a joining part joining the plurality of first silicon members and the embedded silicon member, the joining part provided between the plurality of first silicon members and the embedded silicon member.Type: ApplicationFiled: February 16, 2018Publication date: June 18, 2020Inventors: Atsushi Ikari, Satoshi Fujii
-
Patent number: 10580621Abstract: An electrode plate includes: a plurality of plate-like electrode members; and a joining part joining the electrode members to each other in a thickness direction. The joining part has a heat resistance to withstand a temperature of at least 150° C., melts at 700° C. or below.Type: GrantFiled: July 28, 2017Date of Patent: March 3, 2020Assignee: THINKON NEW TECHNOLOGY JAPAN CORPORATIONInventors: Atsushi Ikari, Satoshi Fujii
-
Patent number: 10553405Abstract: A ring-shaped electrode includes a silicon ring body, and a cover body joined to at least a part of a surface of the ring body via a joining part, and having a better plasma resistance than silicon. The joining part has a heat resistance to withstand a temperature of at least 150° C., melts at 700° C. or below, and contains boron oxide.Type: GrantFiled: July 28, 2017Date of Patent: February 4, 2020Assignee: THINKON NEW TECHNOLOGY JAPAN CORPORATIONInventors: Atsushi Ikari, Satoshi Fujii
-
Publication number: 20190259581Abstract: Provided are a method of manufacturing a ring-shaped member and the ring-shaped member. A method of manufacturing a ring-shaped member to be placed in a process chamber of a substrate processing apparatus includes arranging one silicon member and another silicon member to cause one abutting surface of the one silicon member and another abutting surface of the other silicon member to abut on each other, heating the one abutting surface and the other abutting surface through optical heating to melt silicon on a surface of the one abutting surface and silicon on a surface of the other abutting surface such that silicon melt is caused to flow into a gap between the one abutting surface and the other abutting surface, and cooling the one abutting surface and the other abutting surface to crystallize the silicon melt forming a silicon adhesion part.Type: ApplicationFiled: March 7, 2018Publication date: August 22, 2019Inventors: Atsushi Ikari, Satoshi Fujii
-
Publication number: 20190172687Abstract: A ring-shaped electrode includes a silicon ring body, and a cover body joined to at least a part of a surface of the ring body via a joining part, and having a better plasma resistance than silicon. The joining part has a heat resistance to withstand a temperature of at least 150° C., melts at 700° C. or below, and contains boron oxide.Type: ApplicationFiled: July 28, 2017Publication date: June 6, 2019Inventors: Atsushi Ikari, Satoshi Fujii
-
Publication number: 20190172682Abstract: An electrode plate includes: a plurality of plate-like electrode members; and a joining part joining the electrode members to each other in a thickness direction. The joining part has a heat resistance to withstand a temperature of at least 150° C., melts at 700° C. or below.Type: ApplicationFiled: July 28, 2017Publication date: June 6, 2019Inventors: Atsushi Ikari, Satoshi Fujii
-
Publication number: 20190164728Abstract: A ring for an electrode includes three or more silicon members having an arc shape and a joining part joining the silicon members. The joining part contains boron oxide.Type: ApplicationFiled: July 28, 2017Publication date: May 30, 2019Inventors: Atsushi Ikari, Satoshi Fujii
-
Patent number: 8524001Abstract: Silicon wafers having excellent voltage resistance characteristics of an oxide film and high C-mode characteristics are derived from single crystal silicon ingots doped with nitrogen and hydrogen, characterized in that a plurality of voids constituting a bubble-like void aggregates are present ?50% relative to total voids; a V1 region having a void density of over 2×104/cm3 and below 1×105/cm3 is ?20% of the total area of wafer; a V2 region having a void density of 5×102 to 2×104/cm3 occupies ?80% of the total area of the wafer; and bulk microdefect density is ?5×108/cm3.Type: GrantFiled: December 16, 2009Date of Patent: September 3, 2013Assignee: Siltronic AGInventors: Katsuhiko Nakai, Atsushi Ikari, Masamichi Ohkubo
-
Patent number: 8241421Abstract: The epitaxial layer defects generated from voids of a silicon substrate wafer containing added hydrogen are suppressed by a method for producing an epitaxial wafer by: growing a silicon crystal by the Czochralski method comprising adding hydrogen and nitrogen to a silicon melt and growing from the silicon melt a silicon crystal having a nitrogen concentration of from 3×1013 cm?3 to 3×1014 cm?3, preparing a silicon substrate by machining the silicon crystal, and forming an epitaxial layer at the surface of the silicon substrate.Type: GrantFiled: October 1, 2010Date of Patent: August 14, 2012Assignee: Siltronic AGInventors: Katsuhiko Nakai, Timo Mueller, Atsushi Ikari, Wilfried von Ammon, Martin Weber
-
Patent number: 8043929Abstract: Hetero-semiconductor structures possessing an SOI structure containing a silicon-germanium mixed crystal are produced at a low cost and high productivity. The semiconductor substrates comprise a first layer formed of silicon having germanium added thereto, a second layer formed of an oxide and adjoined to the first layer, and a third layer derived from the same source as the first layer, but having an enriched content of germanium as a result of thermal oxidation and thinning of the third layer.Type: GrantFiled: May 14, 2008Date of Patent: October 25, 2011Assignee: Siltronic AGInventors: Josef Brunner, Hiroyuki Deai, Atsushi Ikari, Martin Grassl, Atsuki Matsumura, Wilfried von Ammon
-
Publication number: 20110084366Abstract: The epitaxial layer defects generated from voids of a silicon substrate wafer containing added hydrogen are suppressed by a method for producing an epitaxial wafer by: growing a silicon crystal by the Czochralski method comprising adding hydrogen and nitrogen to a silicon melt and growing from the silicon melt a silicon crystal having a nitrogen concentration of from 3×1013 cm?3 to 3×1014 cm?3, preparing a silicon substrate by machining the silicon crystal, and forming an epitaxial layer at the surface of the silicon substrate.Type: ApplicationFiled: October 1, 2010Publication date: April 14, 2011Applicant: SILTRONIC AGInventors: Katsuhiko Nakai, Timo Mueller, Atsushi Ikari, Wilfried von Ammon, Martin Weber
-
Publication number: 20100164071Abstract: Silicon wafers having excellent voltage resistance characteristics of an oxide film and high C-mode characteristics are derived from single crystal silicon ingots doped with nitrogen and hydrogen, characterized in that a plurality of voids constituting a bubble-like void aggregates are present ?50% relative to total voids; a V1 region having a void density of over 2×104/cm3 and below 1×105/cm3 is ?20% of the total area of wafer; a V2 region having a void density of 5×102 to 2×104/cm3 occupies ?80% of the total area of the wafer; and bulk microdefect density is ?5×108/cm3.Type: ApplicationFiled: December 16, 2009Publication date: July 1, 2010Applicant: Siltronic AGInventors: Katsuhiko Nakai, Atsushi Ikari, Masamichi Ohkubo
-
Patent number: 7470323Abstract: The Czochralski method is used for producing p?-doped and epitaxially coated semiconductor wafers from silicon, wherein a silicon single crystal is pulled, and during the pulling is doped with boron, hydrogen and nitrogen, and the single crystal thus obtained is processed to form p?-doped semiconductor wafers which are epitaxially coated.Type: GrantFiled: October 11, 2007Date of Patent: December 30, 2008Assignee: Siltronic AGInventors: Wilfried von Ammon, Katsuhiko Nakai, Martin Weber, Herbert Schmidt, Atsushi Ikari