Abstract: A plasma processing apparatus includes: a processing container; a substrate holder disposed within the processing container and configured to hold a substrate thereon; a dielectric window disposed below the substrate holder; and a plurality of phased array antennas disposed below the dielectric window and configured to irradiate a plurality of electromagnetic waves.

Abstract: A battery cleaning device for cleaning a battery cell to be roller pressed, the battery cell having at least one flat surface, the battery cleaning device includes a cleaning unit configured to clean the flat surface of a battery cell prior to or simultaneously with roller-pressing the flat surface of the battery cell.

Abstract: A server for distributing information provided by an information provider as an information element group consisting of one or more information elements connected, to a user terminal. The server includes means for creating a hierarchical structure between the information elements via an image, means for receiving an access to an image related to the first information element, means for searching a second information element constituting a hierarchical structure with the first information element via the image, and means for arranging the second information element on the image and distributing it to the user terminal.

Abstract: An image forming apparatus and an image processing apparatus form N copies of image data that fit a single physical page of print medium. A data receiving section receives print data from an external apparatus. An image reducing section produces a first item of image data based on the print data by reducing a size of an image that corresponds to the print data by a factor of N, N being an integer greater than 1. An image data producing section produces a second item of image data containing N copies of the first item of image data, the N copies of image data fitting a single physical page of print medium. An image printing section prints the second item of image data on the single physical page of print medium.

Abstract: A server for distributing information provided by an information provider as an information element group consisting of one or more information elements connected, to a user terminal. The server includes means for creating a hierarchical structure between the information elements via an image, means for receiving an access to an image related to the first information element, means for searching a second information element constituting a hierarchical structure with the first information element via the image, and means for arranging the second information element on the image and distributing it to the user terminal.

Abstract: A composite material substrate comprises a matrix material and a skeleton structure of a fibrous material. The matrix material exclusively participates in the thermal expansion of the substrate and the fibrous material in the mechanical strength thereof. The fibrous material constituting the skeleton structure has no influence on the thermal expansion profile of the matrix material, and the skeleton structure is loosely bonded to the matrix material at their interface. The substrate is used for solar cells. Photoelectric transfer layers of semiconductors are formed on the substrate to fabricate large-sized solar cells.

Abstract: A method of forming a polycrystalline silicon thin layer, which comprises the steps of forming a silicon thin film on a surface of a heat resistant substrate by making use of polycrystalline silicon fine particles as a raw material, and heating the silicon thin film thereby to recrystallize the silicon thin film and hence to enlarge an average particle diameter of the polycrystalline silicon fine particles. The silicon thin film is formed by depositing the polycrystalline silicon fine particles directly on the surface of the substrate, and meets a relationship represented by the following formula (1)W.sub.A /(V.sub.S .multidot.d.sub.S).gtoreq.0.95 (1)wherein W.sub.A is the weight of the polycrystalline silicon fine particles which is actually deposited on the surface of the substrate, V.sub.S is a volume of the silicon thin film which is deposited on the surface of the substrate, and d.sub.S is a density of silicon (Si).

Abstract: Compounds having potent antimicrobial effects over Gram-positive bacteria and Gram-negative bacteria, a high stability to .beta.-lactamases and DHP-I and a high safety for the human body and a process for producing the same. Carbapenem compounds represented by the following general formula (I) or salts thereof: ##STR1## wherein the ring A represents a 3- to 7-membered non-aromatic ring containing at least one nitrogen atom and optionally having a substituent other than R.sup.6 ; R.sup.1 represents hydrogen or methyl; R.sup.2 and R.sup.5 are the same or different and each represents hydrogen or a protecting group of the hydroxyl group; R.sup.3 represents hydrogen or a protecting group of the carboxyl group; R.sup.4 represents hydrogen, lower alkyl or a protecting group of the amino group; R.sup.6 represents: (1) hydrogen, (2) lower alkyl, optionally substituted by an optionally protected hydroxy, carbamoyl, formimidoyl, acetimidoyl or ##STR2## wherein R.sup.7 and R.sup.

Abstract: A silicon thin film is formed by coating on a substrate a solution of polysilane represented by the general formula --(SiR.sup.1.sub.2).sub.n --, where R.sup.1 substituents are selected from the group consisting of hydrogen, an alkyl group having two or more carbon atoms and a .beta.-hydrogen, a phenyl group and a silyl group, and thermally decomposing the polysilane to deposit silicon.

Abstract: A 7-acyl-3-substituted carbamoyloxy cephem compound represented by the following formula (1): ##STR1## wherein A means a --CH.dbd. or --N.dbd. group; R.sup.1 denotes a hydroxyl, lower alkoxyl, fluorine-substituted lower alkoxyl or protected hydroxyl group; R.sup.2 and R.sup.3 are the same or different and individually represent a lower alkyl, hydroxyl-substituted lower alkyl, a carbamoyl-substituted lower alkyl group or cyano-substituted lower alkyl group, R.sup.2 is a hydrogen atom and R.sup.3 is a lower alkoxyl or alkyl group optionally substituted by one or more halogen atoms, or the group ##STR2## means a 4-6 membered heterocyclic group, which contains one nitrogen atom, or a morpholino group, said heterocyclic group or morpholino group being optionally substituted by one or more lower alkyl, hydroxyl and/or hydroxyl-substituted lower alkyl groups; and R.sup.

Abstract: A light-emitting semiconductor device comprising an n-type cladding layer provided on a surface of a substrate and having concentric first and second parts, a first electrode mounted on the first part of the n-type cladding layer, a p-type cladding layer provided above the surface of the substrate and surrounding the first electrode and the second part of the n-type cladding layer, and a second electrode provided on the p-type cladding layer.

Abstract: A 7-acyl-3-substituted carbamoyloxy cephem compound represented by the following formula (1): ##STR1## wherein A means a --CH.dbd. or --N.dbd. group; R.sup.1 denotes a hydroxyl, lower alkoxyl, fluorine-substituted lower alkoxyl or protected hydroxyl group; R.sup.2 and R.sup.3 are the same or different and individually represent a lower alkyl, hydroxyl-substituted lower alkyl, a carbamoyl-substituted lower alkyl group or cyano-substituted lower alkyl group, R.sup.2 is a hydrogen atom and R.sup.3 is a lower alkoxyl or alkyl group optionally substituted by one or more halogen atoms or the group ##STR2## means a 4-6 membered heterocyclic group, which contains one nitrogen atom, or a morpholino group, said heterocyclic group or morpholino group being optionally substituted by one or more lower alkyl, hydroxyl and/or hydroxyl-substituted lower alkyl groups; and R.sup.

Abstract: A 7-acyl-3-substituted carbamoyloxy cephem compound represented by the following formula (1): ##STR1## wherein A means a --CH.dbd. or --N.dbd. group; R.sup.1 denotes a hydroxyl, lower alkoxyl, fluorine-substituted lower alkoxyl or protected hydroxyl group; R.sup.2 and R.sup.3 are the same or different and individually represent a lower alkyl, hydroxyl-substituted lower alkyl, a carbamoyl-substituted lower alkyl group or cyano-substituted lower alkyl group, R.sup.2 is a hydrogen atom and R.sup.3 is a lower alkoxyl or alkyl group optionally substituted by one or more halogen atoms, or the group ##STR2## means a 4-6 membered heterocyclic group, which contains one nitrogen atom, or a morpholino group, said heterocyclic group or morpholino group being optionally substituted by one or more lower alkyl, hydroxyl and/or hydroxyl-substituted lower alkyl groups; and R.sup.

Abstract: A 7-acyl-3-substituted carbamoyloxy cephem compound represented by the following formula (1): ##STR1## wherein A means a --CH.dbd. or --N.dbd. group; R.sup.1 denotes a hydroxyl, lower alkoxyl, fluorine-substituted lower alkoxyl or protected hydroxyl group; R.sup.2 and R.sup.3 are the same or different and individually represent a lower alkyl, hydroxyl-substituted lower alkyl, a carbamoyl-substituted lower alkyl group or cyano-substituted lower alkyl group, R.sup.2 is a hydrogen atom and R.sup.3 is a lower alkoxyl or alkyl group optionally substituted by one or more halogen atoms, or the group ##STR2## means a 4-6 membered heterocyclic group, which contains one nitrogen atom, or a morpholino group, said heterocyclic group or morpholino group being optionally substituted by one or more lower alkyl, hydroxyl and/or hydroxyl-substituted lower alkyl groups; and R.sup.

Abstract: A 7-acyl-3-substituted carbamoyloxy cephem compound represented by the following formula (1): ##STR1## wherein A means a --CH.dbd. or --N.dbd. group; R.sup.1 denotes a hydroxyl, lower alkoxyl or protected hydroxyl group; R.sup.2 and R.sup.3 are the same or different and individually represent a lower alkyl, hydroxyl-substituted lower alkyl, a carbamoyl-substituted lower alkyl group or cyano-substituted lower alkyl group, R.sup.2 is a hydrogen atom and R.sup.3 is a lower alkoxyl or alkyl group optionally substituted by one or more halogen atoms, or the group ##STR2## means a 4-6 membered heterocyclic group, which contains one nitrogen atom, or a morpholino group, said heterocyclic group or morpholino group being optionally substituted by one or more lower alkyl, hydroxyl and/or hydroxyl-substituted lower alkyl groups; and R.sup.

Abstract: A light-emitting diode has a GaAs substrate, and two ZnSe layers formed on the substrate and having a pn junction. An AuZn electrode is formed on the upper one of the ZnSe layers with a (ZnSe).sub.x (GaAs).sub.(1-x) ohmic contact layer interposed therebetween. The coefficient x of the composition formula is substantially continuously varied from 1.0 to 0 from the ZnSe layer side. An AuGe electrode is formed on the lower surface of the GaAs substrate. The (ZnSe).sub.x (GaAs).sub.(1-x) layer reduces the resistance between the ZnSe layer and AuZn electrode, and also prevents Ga atoms from diffusing into the ZnSe layer.

Abstract: AlN is added to a SiC light emitting layer of an optical semiconductor device in a molecular state, and an association of AlN is formed between crystal lattice points, which are close to each other in said light emitting layer. Said association is largely different from said SiC in degree of electron negativity so that said association traps a carrier in said light emitting layer, and forms an exciton.

Abstract: An optical semiconductor device is provided with a p-type ZnSe semiconductor layer. Si, Cl and O atoms are added, as dopants, to the ZnSe semiconductor layer. Associations of the Si, Cl and O atoms are formed to define a shallow acceptor level in the semiconductor layer. Each of the associations comprises one Si atom, one Cl atom and one O atom by which the lattice points of Se are displaced between those crystal lattice points in the semiconductor layer which are adjacent to one another.

Abstract: A semiconductor light emitting device is disclosed which comprises a compound semiconductor substrate, an n type ZnS.sub.x Se.sub.1-x crystal layer (0.ltoreq.x.ltoreq.1) formed on the substrate and containing a Group VII element as a donor impurity, and a p type ZnS.sub.y Se.sub.1-y crystal layer (0.ltoreq.y.ltoreq.1) formed on the n type crystal layer and containing a Group I element as an acceptor impurity, where a pn junction is formed between the n type crystal layer and the p type crystal layer.