Abstract: A color filter array is provided. The array comprises a first color filter, a second color filter, and a third color filter that are arranged on a base member and respectively have different colors. The first color filter and the third color filter are arranged adjacent to each other, the second color filter includes a portion placed between an end portion of the third color filter and the base member, and the end portion of the third color filter and the portion of the second color filter are in contact with the first color filter.

Abstract: A semiconductor device includes a plurality of wirings each having a damascene structure on a semiconductor layer, wherein the plurality of wirings includes a first wiring and a second wiring adjacent to each other, wherein the first wiring includes, along a direction in which the first wiring extends, a first portion, a second portion, and a third portion located between the first portion and the second portion, and wherein a width of the third portion is larger than each of a width of the first portion and a width of the second portion.

Abstract: A solid-state imaging device has a first area in which a plurality of pixels are provided, a second area provided on an outer side with respect to the first area, and a third area provided on the outer side with respect to the second area. An inner-lens layer provided over the first to third areas has an opening. An insulating film provided below the inner-lens layer also has an opening.

Abstract: A solid-state imaging device has a first area in which a plurality of pixels are provided, a second area provided on an outer side with respect to the first area, and a third area provided on the outer side with respect to the second area. An inner-lens layer provided over the first to third areas has an opening. An insulating film provided below the inner-lens layer also has an opening.

Abstract: A method of manufacturing a semiconductor device, comprising forming an insulating member on a structure having a height difference, and forming openings in the insulating member, the forming openings including first etching under a condition with a microloading phenomenon and second etching under a condition with a reverse microloading phenomenon, wherein the first etching is stopped before an upper face of the structure is exposed and then the second etching is started.

Abstract: A method for manufacturing a semiconductor device comprising, forming a first photoresist pattern by exposing and then developing a first photoresist film formed on a substrate, irradiating the first photoresist pattern with UV light to cure its surface, forming a second photoresist film so as to cover the substrate and the first photoresist pattern, forming a second photoresist pattern and performing ion implantation in the substrate using the second photoresist pattern. The second photoresist pattern is not subjected to UV irradiation after the second photoresist film has been developed and before the ion implantation is performed, or is irradiated with the UV light, after the second photoresist film has been developed and before the ion implantation is performed, under a reduced condition relative to that for the first photoresist pattern.

Abstract: A method of manufacturing a semiconductor device, comprising forming an insulating member on a structure having a height difference, and forming openings in the insulating member, the forming openings including first etching under a condition with a microloading phenomenon and second etching under a condition with a reverse microloading phenomenon, wherein the first etching is stopped before an upper face of the structure is exposed and then the second etching is started.

Abstract: A method for manufacturing a semiconductor device comprising, forming a first photoresist pattern by exposing and then developing a first photoresist film formed on a substrate, irradiating the first photoresist pattern with UV light to cure its surface, forming a second photoresist film so as to cover the substrate and the first photoresist pattern, forming a second photoresist pattern and performing ion implantation in the substrate using the second photoresist pattern. The second photoresist pattern is not subjected to UV irradiation after the second photoresist film has been developed and before the ion implantation is performed, or is irradiated with the UV light, after the second photoresist film has been developed and before the ion implantation is performed, under a reduced condition relative to that for the first photoresist pattern.

Abstract: A method of planarizing a member is provided. The method includes forming the member and polishing a top face of the member. The forming the member includes forming a resist layer which varies in thickness and performing an etch-back process. The etch-back process removes the resist layer and adjusts amounts to be removed by the polishing from respective locations of the member.

Abstract: A photomask for exposing a region on a substrate, with a mask pattern, including a first line pattern, a second line pattern, a first connection pattern for a peripheral portion of the region and a second connection pattern for the peripheral portion, wherein the first connection pattern is wider than the first line pattern and the second connection pattern is wider than the second line pattern, a distance from a virtual line between the first line pattern and the second line pattern to a center line of the first connection pattern is larger than a distance from the virtual line to a center line of the first line pattern and a distance from the virtual line to a center line of the second connection pattern is larger than a distance from the virtual line to a center line of the second line pattern.