Patents by Inventor Atsushi Kishida

Atsushi Kishida has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9293166
    Abstract: There is disclosed a sputtering target material for producing an intermediate layer film of a perpendicular magnetic recording medium, which is capable of dramatically reducing the crystal grain size of a thin film formed by sputtering. The sputtering target material comprises, in at %, 1 to 20% of W; 0.1 to 10% in total of one or more elements selected from the group consisting of P, Zr, Si and B; and balance Ni.
    Type: Grant
    Filed: April 30, 2009
    Date of Patent: March 22, 2016
    Assignee: Sanyo Special Steel Co., Ltd.
    Inventors: Toshiyuki Sawada, Atsushi Kishida, Akihiko Yanagitani
  • Patent number: 9208812
    Abstract: There is provided a soft magnetic alloy for a perpendicular magnetic recording medium having a low coercive force, high amorphous properties, high corrosion resistance, and a high hardness; and a sputtering target for producing a thin film of the alloy. The alloy comprises in at. %: 6 to 20% in total of one or two of Zr and Hf; 1 to 20% of B; and 0 to 7% in total of one or two or more of Ti, V, Nb, Ta, Cr, Mo, W, Ni, Al, Si, and P; and the balance Co and/or Fe and unavoidable impurities. The alloy further satisfies 6?2×(Zr%+Hf%)?B%?16 and 0?Fe%/(Fe%+Co%)<0.20.
    Type: Grant
    Filed: August 19, 2011
    Date of Patent: December 8, 2015
    Assignee: Sanyo Special Steel Co., Ltd.
    Inventors: Toshiyuki Sawada, Hiroyuki Hasegawa, Atsushi Kishida
  • Publication number: 20130224067
    Abstract: There is provided a soft magnetic alloy for a perpendicular magnetic recording medium having a low coercive force, high amorphous properties, high corrosion resistance, and a high hardness; and a sputtering target for producing a thin film of the alloy. The alloy comprises in at. %: 6 to 20% in total of one or two of Zr and Hf; 1 to 20% of B; and 0 to 7% in total of one or two or more of Ti, V, Nb, Ta, Cr, Mo, W, Ni, Al, Si, and P; and the balance Co and/or Fe and unavoidable impurities. The alloy further satisfies 6?2×(Zr%+Hf%)?B%?16 and 0?Fe%/(Fe%+Co%)<0.20.
    Type: Application
    Filed: August 19, 2011
    Publication date: August 29, 2013
    Applicant: SANYO SPECIAL STEEL CO., LTD.
    Inventors: Toshiyuki Sawada, Hiroyuki Hasegawa, Atsushi Kishida
  • Publication number: 20110020169
    Abstract: There is disclosed a sputtering target material for producing an intermediate layer film of a perpendicular magnetic recording medium, which is capable of dramatically reducing the crystal grain size of a thin film formed by sputtering. The sputtering target material comprises, in at %, 1 to 20% of W; 0.1 to 10% in total of one or more elements selected from the group consisting of P, Zr, Si and B; and balance Ni.
    Type: Application
    Filed: April 30, 2009
    Publication date: January 27, 2011
    Applicant: SANYO SPECIAL STEEL CO., LTD.
    Inventors: Toshiyuki Sawada, Atsushi Kishida, Akihiko Yanagitani