Abstract: Provided is an optical lens formed by integrally molding a lens part that is an optically effective portion and has a light incidence/emission surface, and a lens edge part that is an optically ineffective portion and has a surface thereof except the light incidence/emission surface. The lens edge part includes a non-transparent region in part or all thereof, the lens part and the lens edge part include a thermoplastic resin, and the non-transparent region in the lens edge part contains a total of 0.1-5 mass % of one or more of a black dye and a black pigment.

Abstract: A rotary electric machine includes a rotor core and a stator core. The rotor core includes a steel plate laminated in an axial direction of a rotation shaft of a rotor. The stator core is provided outside an outer periphery of the rotor core and includes a steel plate laminated in the axial direction. An average plate thickness of the steel plate of the stator core is smaller than an average plate thickness of the steel plate of the rotor core. In the steel plate of the stator core, a plate thickness of a portion between a predetermined position and a radially outer edge in a radial direction around the rotation axis is smaller than a plate thickness of a portion between the predetermined position and a radially inner edge in the radial direction.

Abstract: When a controller performs a defrosting operation in which frost on an outdoor heat exchanger is caused to be melted, the controller is configured to perform a first defrosting control in which a switching state of a switching device is set to a first state, after the controller performs the first defrosting control, perform a second defrosting control in which the switching state of the switching device is set to a second state, and after the controller performs the second defrosting control, perform a third defrosting control in which the switching state of the switching device is set to the first state.

Abstract: A refrigeration cycle apparatus includes: a compressor; an indoor heat exchanger; an outdoor heat exchanger including first and second outdoor heat exchangers; a bypass flow passage causing a discharge side of the compressor to communicate with the first or second outdoor heat exchanger; a flow control valve at the bypass flow passage; and a controller performing a heating operation in which the first and second outdoor heat exchangers operate as an evaporator and the indoor heat exchanger operates as a condenser and a simultaneous heating and defrosting operation in which part of refrigerant the compressor discharges is supplied to one of the first and second outdoor heat exchangers through the bypass flow passage, the other of the outdoor heat exchangers operates as an evaporator, the indoor heat exchanger operates as a condenser, and an upper limit frequency of the compressor changes to a value higher than in the heating operation.

Abstract: According to one embodiment, a memory device includes a first nonvolatile memory die, a second nonvolatile memory die, a controller, and a first temperature sensor and a second temperature sensor incorporated respectively in the first nonvolatile memory die and the second nonvolatile memory die. The controller reads temperatures measured by the first and second temperature sensors, from the first and second nonvolatile memory dies. When at least one of the temperatures read from the first and second nonvolatile memory dies is equal to or higher than a threshold temperature, the controller reduces a frequency of issue of commands to the first and second nonvolatile memory dies or a seed of access to the first and second nonvolatile memory dies.

Abstract: According to one embodiment, an information processing apparatus includes a connector into which a first-type semiconductor storage device operating with n types of power supply voltages or a second-type semiconductor storage device operating with m types of power supply voltages less than the n types of power supply voltages is capable of being placed. The apparatus checks whether or not a notch is formed at a predetermined position of a semiconductor storage device placed into the connector, and supplies the m types of power supply voltages to the semiconductor storage device when the notch is formed at the predetermined position.

Abstract: An air-conditioning apparatus includes a main circuit in which a compressor, a flow switching device, an indoor heat exchanger, a pressure reducing device, and a plurality of parallel heat exchangers connected in parallel with each other are connected by pipes, a bypass pipe, a flow control device provided to the bypass pipe and configured to adjust a flow rate of refrigerant flowing through the bypass pipe, an evaporating pressure sensor configured to measure an evaporating pressure of the refrigerant, and a controller. The air-conditioning apparatus is configured to operate in a normal heating operation mode and a heating-defrosting operation mode. When an operation associated with the normal heating operation mode is switched to an operation associated with the heating-defrosting operation mode, the controller adjusts an opening degree of the flow control device using the evaporating pressure in the parallel heat exchanger and a driving frequency of the compressor.

Abstract: A sensor element includes an element body and a porous protective layer arranged to cover a part of a surface of the element body. The protective layer includes an inlet protective layer arranged to cover a gas inlet formed in the surface of the element body, and at least a part of a face included in the surface of the element body, the face on which the gas inlet is opens, and an arithmetic average roughness Rap of an inner peripheral surface of an internal space of the inlet protective layer satisfies at least one of conditions below: the arithmetic average roughness Rap is 8 ?m or more, and the arithmetic average roughness Rap is higher than an arithmetic average roughness Rac of a bonding surface of the protective layer, the bonding surface at which the protective layer is bonded to the element body.

Abstract: A molded bale of a rubber-like block copolymer, the rubber-like block copolymer containing 5% by mass or more and 95% by mass or less of a polymer block (a) having a content of a vinyl aromatic monomer unit of 22% by mass or less; and 5% by mass or more and 95% by mass or less of a polymer block (b) having a content of a vinyl aromatic monomer unit of 23% by mass or more and less than 50% by mass, in which the rubber-like block copolymer has an iodine value of 10 to 250, an ethylene structure content of 3% by mass or more, and a vinyl aromatic monomer block content of less than 10% by mass.

Abstract: An electronic component according to an aspect of the present disclosure includes an element body and a terminal electrode. The element body includes an outer surface provided with a depression. The terminal electrode is disposed on the element body. The terminal electrode includes a first electrode portion and a second electrode portion. The first electrode portion is disposed in the depression. The second electrode portion protrudes from the depression. The second electrode portion is thicker than the first electrode portion.

Abstract: According to one embodiment, a memory device is disclosed. The memory device includes a substrate, an on-volatile memory, a memory controller, an interconnect including one end and another end. The one end is connected to the memory controller. A footprint is on the substrate and connected to the another end of the interconnect. An ESD protection element is on the substrate and connected to the footprint. A connection terminal is on the substrate and connectable to a host device. A via plug is in the substrate. One end of the via plug is connected to the another end of the interconnect and another end of the first plug is connected to the connection terminal.

Abstract: According to one embodiment, when a current consumption class supported by a removable memory device is another current consumption class different from a first current consumption class with a largest current consumption value among plural types of current consumption classes, the first current consumption value consumed from a first power by the removable memory device is smaller than or equal to a third permissible current value for a first power defined in the other current consumption class; and a second current consumption value consumed from a second power by the removable memory device is smaller than or equal to a fourth permissible current value for the second power defined in the other current consumption class.

Abstract: According to one embodiment, an information processing apparatus includes a connector into which a first-type semiconductor storage device operating with n types of power supply voltages or a second-type semiconductor storage device operating with m types of power supply voltages less than the n types of power supply voltages is capable of being placed. The apparatus checks whether or not a notch is formed at a predetermined position of a semiconductor storage device placed into the connector, and supplies the m types of power supply voltages to the semiconductor storage device when the notch is formed at the predetermined position.

Abstract: According to one embodiment, an information processing apparatus includes a connecting portion connectable to a removable memory device and a power supply circuit configured to apply a first voltage and a second voltage to the removable memory device. When the removable memory device is connected to the connecting portion, one of a pair of first feedback wires is electrically connected to one of the first power supply terminals to which the first voltage is applicable, and the other of the pair of first feedback wires is electrically connected to one of the power supply ground terminals connectable to a ground level, the power supply circuit is configured to control the first voltage, based on a voltage between the pair of first feedback wires.

Abstract: A swing measuring attachment includes a base portion and a protrusion protruding from the base portion, in which the protrusion is provided with a screw thread, the protrusion including a projection at a front end of the protrusion.

Abstract: According to one embodiment, an information processing apparatus includes a connector into which a first-type semiconductor storage device operating with n types of power supply voltages or a second-type semiconductor storage device operating with m types of power supply voltages less than the n types of power supply voltages is capable of being placed. The apparatus checks whether or not a notch is formed at a predetermined position of a semiconductor storage device placed into the connector, and supplies the m types of power supply voltages to the semiconductor storage device when the notch is formed at the predetermined position.

Abstract: A washing pipe is mounted on a washing guide provided on an outer side of an outer cylinder screen of the screw press and includes a washing pipe body and washing nozzles provided in the washing pipe body and configured to discharge washing liquid flowing from an inside of the washing pipe body toward the outer cylinder screen. A washing pipe swing supporter is configured to support the washing guide to allow the washing pipe to swing between a discharge position and a separation position. The discharge position is a position where the washing pipe is mounted on the washing guide and the washing liquid is discharged from the washing nozzles toward the outer cylinder screen. The separation position is a position where the washing nozzles are farther away from the outer cylinder screen than in a state where the washing pipe is positioned at the discharge position.

Abstract: According to one embodiment, a memory device includes a first nonvolatile memory die, a second nonvolatile memory die, a controller, and a first temperature sensor and a second temperature sensor incorporated respectively in the first nonvolatile memory die and the second nonvolatile memory die. The controller reads temperatures measured by the first and second temperature sensors, from the first and second nonvolatile memory dies. When at least one of the temperatures read from the first and second nonvolatile memory dies is equal to or higher than a threshold temperature, the controller reduces a frequency of issue of commands to the first and second nonvolatile memory dies or a seed of access to the first and second nonvolatile memory dies.

Abstract: According to one embodiment, a semiconductor storage device includes a plurality of terminals. The plurality of terminals form at least a first row and a second row. The first row includes a plurality of terminals arranged in a first direction at intervals from each other at locations closer to a first end edge than to a second end edge. The second row includes a plurality of terminals arranged in the first direction at intervals from each other at locations closer to the second end edge than to the first end edge. An area between the first row and the second row on a first surface includes a contact area that is in contact with a heat-conducting member, which is disposed on a printed circuit board in a host device that is electrically connected to the semiconductor storage device.