Patents by Inventor Atsushi Masagaki
Atsushi Masagaki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11961862Abstract: A solid-state imaging element of an embodiment of the present disclosure includes: a semiconductor substrate including a photoelectric conversion section for each pixel; a pixel transistor provided on one surface of the semiconductor substrate; and an element separation section provided in the semiconductor substrate and including a first element separation section and a second element separation section that have mutually different configurations, the element separation section defining an active region of the pixel transistor, in which the second element separation section has, on a side surface, a first semiconductor region and a second semiconductor region that have mutually different impurity concentrations in a depth direction of the second element separation section.Type: GrantFiled: June 3, 2019Date of Patent: April 16, 2024Assignee: Sony Semiconductor Solutions CorporationInventor: Atsushi Masagaki
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Publication number: 20240088189Abstract: To provide an imaging device capable of further suppressing noise in a pixel signal. An imaging device includes: a semiconductor substrate (30) that includes a photoelectric conversion portion (31) configured to photoelectrically convert incident light, or a charge holding portion (32) configured to hold charge photoelectrically converted by the photoelectric conversion portion; a field effect transistor provided on the photoelectric conversion portion, or on the semiconductor substrate near the charge holding portion; a contact plug (26) that extends in a direction normal to one main surface of the semiconductor substrate from a gate electrode (25) of the field effect transistor; and a projecting portion (27) that extends in an in-plane direction of the one main surface of the semiconductor substrate from the contact plug.Type: ApplicationFiled: April 23, 2020Publication date: March 14, 2024Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Hironori HOSHI, Atsushi MASAGAKI
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Publication number: 20230387154Abstract: The present disclosure relates to a solid-state image pickup device and an electronic apparatus that are capable of preventing leakage of charges between adjacent pixels. A plurality of pixels perform photoelectric conversion on light incident from a back surface via different on-chip lenses for each pixel. A pixel separation wall is formed between pixels adjacent to each other, and includes a front-side trench formed from a front surface and a backside trench formed from the back surface. A wiring layer is provided on the front surface. The present disclosure is applicable to, for example, a backside illuminated CMOS image sensor.Type: ApplicationFiled: July 21, 2023Publication date: November 30, 2023Applicant: SONY GROUP CORPORATIONInventors: Atsushi MASAGAKI, Yusuke TANAKA
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Patent number: 11776978Abstract: The present disclosure relates to a solid-state image pickup device and an electronic apparatus that are capable of preventing leakage of charges between adjacent pixels. A plurality of pixels perform photoelectric conversion on light incident from a back surface via different on-chip lenses for each pixel. A pixel separation wall is formed between pixels adjacent to each other, and includes a front-side trench formed from a front surface and a backside trench formed from the back surface. A wiring layer is provided on the front surface. The present disclosure is applicable to, for example, a backside illuminated CMOS image sensor.Type: GrantFiled: July 13, 2022Date of Patent: October 3, 2023Assignee: Sony Group CorporationInventors: Atsushi Masagaki, Yusuke Tanaka
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Patent number: 11688753Abstract: An imaging device includes a first chip (72). The first chip includes first and second pixels including respective first and second photoelectric conversion regions (PD) that convert incident light into electric charge. The first chip includes a first connection region for bonding the first chip to a second chip (73) and including a first connection portion (702, 702d) overlapped with the first photoelectric conversion region in a plan view, and a second connection portion overlapped with the second photoelectric conversion region in the plan view. The first photoelectric region receives incident light of a first wavelength, and the second photoelectric conversion region receives incident light of a second wavelength that is greater than the first wavelength. The first connection portion overlaps an area of the first photoelectric conversion region that is larger than an area of the second photoelectric conversion region overlapped by the second connection portion.Type: GrantFiled: February 9, 2018Date of Patent: June 27, 2023Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Tomomi Ito, Atsuhiko Yamamoto, Atsushi Masagaki
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Publication number: 20230197753Abstract: The present disclosure relates to a solid-state image element and an electronic device provided as a solid-state image element and an electronic device capable of suppressing the occurrence of a strong electrical field near a transistor while being compact. The solid-state image element includes a photoelectric conversion element that performs photoelectric conversion, an element isolation that penetrates from a first main surface to a second main surface of a substrate and that is formed between pixels including the photoelectric conversion element, and a conductor part provided in close contact with a first main surface side of the element isolation. The present technology can be applied to, for example, a solid-state image element and an electronic device including the solid-state image element.Type: ApplicationFiled: March 15, 2021Publication date: June 22, 2023Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Shin IWABUCHI, Tomomi ITO, Atsushi MASAGAKI, Yoshiharu KUDOH
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Publication number: 20230005981Abstract: Provided is a solid-state image sensor and an electronic device capable of suppressing the occurrence of a strong electrical field near a transistor while being compact. The solid-state image sensor includes a photoelectric conversion element that performs photoelectric conversion, an element isolation that penetrates from a first main surface to a second main surface of a substrate and that is formed between pixels including the photoelectric conversion element, and a conductive part provided in close contact with a first main surface side of the element isolation.Type: ApplicationFiled: November 27, 2020Publication date: January 5, 2023Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Tomomi ITO, Atsushi MASAGAKI, Yoshiharu KUDOH
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Patent number: 11496716Abstract: A solid state imaging device includes a pixel array unit in which color filters of a plurality of colors are arrayed with four pixels of vertical 2 pixels×horizontal 2 pixels as a same color unit that receives light of the same color, shared pixel transistors that are commonly used by a plurality of pixels are intensively arranged in one predetermined pixel in a unit of sharing, and a color of the color filter of a pixel where the shared pixel transistors are intensively arranged is a predetermined color among the plurality of colors. The present technology can be applied, for example, to a solid state imaging device such as a back-surface irradiation type CMOS image sensor.Type: GrantFiled: July 20, 2021Date of Patent: November 8, 2022Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventor: Atsushi Masagaki
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Publication number: 20220352225Abstract: The present disclosure relates to a solid-state image pickup device and an electronic apparatus that are capable of preventing leakage of charges between adjacent pixels. A plurality of pixels perform photoelectric conversion on light incident from a back surface via different on-chip lenses for each pixel. A pixel separation wall is formed between pixels adjacent to each other, and includes a front-side trench formed from a front surface and a backside trench formed from the back surface. A wiring layer is provided on the front surface. The present disclosure is applicable to, for example, a backside illuminated CMOS image sensor.Type: ApplicationFiled: July 13, 2022Publication date: November 3, 2022Applicant: SONY GROUP CORPORATIONInventors: Atsushi MASAGAKI, Yusuke TANAKA
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Patent number: 11444112Abstract: The present disclosure relates to a solid-state image pickup device and an electronic apparatus that are capable of preventing leakage of charges between adjacent pixels. A plurality of pixels perform photoelectric conversion on light incident from a back surface via different on-chip lenses for each pixel. A pixel separation wall is formed between pixels adjacent to each other, and includes a front-side trench formed from a front surface and a backside trench formed from the back surface. A wiring layer is provided on the front surface. The present disclosure is applicable to, for example, a backside illuminated CMOS image sensor.Type: GrantFiled: May 4, 2021Date of Patent: September 13, 2022Assignee: SONY GROUP CORPORATIONInventors: Atsushi Masagaki, Yusuke Tanaka
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Publication number: 20220246666Abstract: Leakage of incident light to a charge holding part is reduced in a back surface irradiation type imaging element. The imaging element includes a photoelectric conversion part, a reflection part, and a reflection part formation member. The photoelectric conversion part is formed in a semiconductor substrate and performs photoelectric conversion of incident light. The reflection part is disposed in a front surface of the semiconductor substrate, which is different from a surface on which the incident light is incident, to reflect transmitted light transmitted through the photoelectric conversion part to the photoelectric conversion part. The reflection part formation member has a bottom surface disposed adjacent to the front surface of the semiconductor substrate and a side on which the reflection part is formed.Type: ApplicationFiled: April 9, 2020Publication date: August 4, 2022Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Sachihito KUNITAKE, Shinichiro NOUDO, Atsushi MASAGAKI
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Publication number: 20220139992Abstract: There is provided an image sensor including a first substrate including a plurality of pixels and a plurality of vertical signal lines and a plurality of first wiring layers and a second substrate including a plurality of second wiring layers. The first and second substrates are secured together between the pluralities of first and second wiring layers. First pads are provided between one of the plurality of first wiring layers and one of the plurality of second wiring layers and second pads are provided between another of the plurality of first wiring layers and another of the plurality of second wiring layers. First vias and second vias connect the first pads and the one of the plurality of first wiring layers and the one of the plurality of second wiring layers together.Type: ApplicationFiled: February 28, 2020Publication date: May 5, 2022Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Tomomi ITO, Kazuyoshi YAMASHITA, Atsushi MASAGAKI, Shinobu ASAYAMA, Shinya ITOH, Haruyuki NAKAGAWA, Kyohei MIZUTA, Susumu OOKI, Osamu OKA, Kazuto KAMIMURA, Takuji MATSUMOTO, Kenju NISHIKIDO
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Publication number: 20210352248Abstract: A solid state imaging device includes a pixel array unit in which color filters of a plurality of colors are arrayed with four pixels of vertical 2 pixels×horizontal 2 pixels as a same color unit that receives light of the same color, shared pixel transistors that are commonly used by a plurality of pixels are intensively arranged in one predetermined pixel in a unit of sharing, and a color of the color filter of a pixel where the shared pixel transistors are intensively arranged is a predetermined color among the plurality of colors. The present technology can be applied, for example, to a solid state imaging device such as a back-surface irradiation type CMOS image sensor.Type: ApplicationFiled: July 20, 2021Publication date: November 11, 2021Applicant: Sony Semiconductor Solutions CorporationInventor: Atsushi Masagaki
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Publication number: 20210272987Abstract: A solid-state imaging element of an embodiment of the present disclosure includes: a semiconductor substrate including a photoelectric conversion section for each pixel; a pixel transistor provided on one surface of the semiconductor substrate; and an element separation section provided in the semiconductor substrate and including a first element separation section and a second element separation section that have mutually different configurations, the element separation section defining an active region of the pixel transistor, in which the second element separation section has, on a side surface, a first semiconductor region and a second semiconductor region that have mutually different impurity concentrations in a depth direction of the second element separation section.Type: ApplicationFiled: June 3, 2019Publication date: September 2, 2021Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventor: Atsushi MASAGAKI
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Publication number: 20210265406Abstract: The present disclosure relates to a solid-state image pickup device and an electronic apparatus that are capable of preventing leakage of charges between adjacent pixels. A plurality of pixels perform photoelectric conversion on light incident from a back surface via different on-chip lenses for each pixel. A pixel separation wall is formed between pixels adjacent to each other, and includes a front-side trench formed from a front surface and a backside trench formed from the back surface. A wiring layer is provided on the front surface. The present disclosure is applicable to, for example, a backside illuminated CMOS image sensor.Type: ApplicationFiled: May 4, 2021Publication date: August 26, 2021Applicant: SONY GROUP CORPORATIONInventors: Atsushi MASAGAKI, Yusuke TANAKA
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Patent number: 11095860Abstract: A solid state imaging device includes a pixel array unit in which color filters of a plurality of colors are arrayed with four pixels of vertical 2 pixels×horizontal 2 pixels as a same color unit that receives light of the same color, shared pixel transistors that are commonly used by a plurality of pixels are intensively arranged in one predetermined pixel in a unit of sharing, and a color of the color filter of a pixel where the shared pixel transistors are intensively arranged is a predetermined color among the plurality of colors. The present technology can be applied, for example, to a solid state imaging device such as a back-surface irradiation type CMOS image sensor.Type: GrantFiled: April 24, 2020Date of Patent: August 17, 2021Assignee: Sony Semiconductor Solutions CorporationInventor: Atsushi Masagaki
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Patent number: 11024661Abstract: The present disclosure relates to a solid-state image pickup device and an electronic apparatus that are capable of preventing leakage of charges between adjacent pixels. A plurality of pixels perform photoelectric conversion on light incident from a back surface via different on-chip lenses for each pixel. A pixel separation wall is formed between pixels adjacent to each other, and includes a front-side trench formed from a front surface and a backside trench formed from the back surface. A wiring layer is provided on the front surface. The present disclosure is applicable to, for example, a backside illuminated CMOS image sensor.Type: GrantFiled: April 15, 2020Date of Patent: June 1, 2021Assignee: SONY CORPORATIONInventors: Atsushi Masagaki, Yusuke Tanaka
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Publication number: 20200260054Abstract: A solid state imaging device includes a pixel array unit in which color filters of a plurality of colors are arrayed with four pixels of vertical 2 pixels×horizontal 2 pixels as a same color unit that receives light of the same color, shared pixel transistors that are commonly used by a plurality of pixels are intensively arranged in one predetermined pixel in a unit of sharing, and a color of the color filter of a pixel where the shared pixel transistors are intensively arranged is a predetermined color among the plurality of colors. The present technology can be applied, for example, to a solid state imaging device such as a back-surface irradiation type CMOS image sensor.Type: ApplicationFiled: April 24, 2020Publication date: August 13, 2020Applicant: Sony Semiconductor Solutions CorporationInventor: Atsushi Masagaki
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Publication number: 20200243581Abstract: The present disclosure relates to a solid-state image pickup device and an electronic apparatus that are capable of preventing leakage of charges between adjacent pixels. A plurality of pixels perform photoelectric conversion on light incident from a back surface via different on-chip lenses for each pixel. A pixel separation wall is formed between pixels adjacent to each other, and includes a front-side trench formed from a front surface and a backside trench formed from the back surface. A wiring layer is provided on the front surface. The present disclosure is applicable to, for example, a backside illuminated CMOS image sensor.Type: ApplicationFiled: April 15, 2020Publication date: July 30, 2020Applicant: Sony CorporationInventors: Atsushi MASAGAKI, Yusuke TANAKA
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Patent number: 10666914Abstract: A solid state imaging device includes a pixel array unit in which color filters of a plurality of colors are arrayed with four pixels of vertical 2 pixels×horizontal 2 pixels as a same color unit that receives light of the same color, shared pixel transistors that are commonly used by a plurality of pixels are intensively arranged in one predetermined pixel in a unit of sharing, and a color of the color filter of a pixel where the shared pixel transistors are intensively arranged is a predetermined color among the plurality of colors. The present technology can be applied, for example, to a solid state imaging device such as a back-surface irradiation type CMOS image sensor.Type: GrantFiled: September 9, 2019Date of Patent: May 26, 2020Assignee: Sony Semiconductor Solutions CorporationInventor: Atsushi Masagaki