Patents by Inventor Atsushi Mimura

Atsushi Mimura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10443986
    Abstract: The present invention provides a smoke screen generator with a high diffusion rate of a smoke screen. Ends at both sides of a cylindrical housing are closed by a first closure 20 and a second closure 30 respectively, and a flow path changing member 60 is attached at an interval in an axial direction from the second closure 30. At the time of actuation, a smoke screen source passes through a smoke screen source discharge port 38, first discharge flow paths 44, 45 and 46, and a second discharge flow path 47 and is discharged from a final discharge port 48. Since the smoke screen source is radially discharged from the final discharge port 48, a diffusion rate of a smoke screen increases.
    Type: Grant
    Filed: October 4, 2016
    Date of Patent: October 15, 2019
    Assignee: DAICEL CORPORATION
    Inventors: Katsuhiro Nakahashi, Takao Kuroda, Atsushi Mimura, Yuji Higuchi
  • Patent number: 10145658
    Abstract: The present invention provides a smoke screen generator with a high diffusion rate of a smoke screen. Openings at both ends of a cylindrical housing are closed by a first closure 20 including an igniter and a second closure 30 having a smoke screen source discharge port 38 respectively. A porous cylindrical body 50 is arranged between the first closure 20 and the second closure 30. When an igniter 5 is actuated, a smoke screen generating agent 56 in a smoke screen generating agent-accommodating chamber 55 is ignited and burned, and a smoke screen source is generated. The smoke screen source moves and passes through the porous cylindrical body 50 and, after passing through a smoke screen source discharge port 38, the smoke screen source is discharged to the outside to generate a smoke screen.
    Type: Grant
    Filed: October 4, 2016
    Date of Patent: December 4, 2018
    Assignee: DAICEL CORPORATION
    Inventors: Atsushi Mimura, Yuji Higuchi, Takao Kuroda, Katsuhiro Nakahashi
  • Publication number: 20180259301
    Abstract: The present invention provides a smoke screen generator with a high diffusion rate of a smoke screen. Openings at both ends of a cylindrical housing are closed by a first closure 20 including an igniter and a second closure 30 having a smoke screen source discharge port 38 respectively. A porous cylindrical body 50 is arranged between the first closure 20 and the second closure 30. When an igniter 5 is actuated, a smoke screen generating agent 56 in a smoke screen generating agent-accommodating chamber 55 is ignited and burned, and a smoke screen source is generated. The smoke screen source moves and passes through the porous cylindrical body 50 and, after passing through a smoke screen source discharge port 38, the smoke screen source is discharged to the outside to generate a smoke screen.
    Type: Application
    Filed: October 4, 2016
    Publication date: September 13, 2018
    Applicant: DAICEL CORPORATION
    Inventors: Atsushi MIMURA, Yuji HIGUCHI, Takao KURODA, Katsuhiro NAKAHASHI
  • Publication number: 20180252502
    Abstract: The present invention provides a smoke screen generator with a high diffusion rate of a smoke screen. Ends at both sides of a cylindrical housing are closed by a first closure 20 and a second closure 30 respectively, and a flow path changing member 60 is attached at an interval in an axial direction from the second closure 30. At the time of actuation, a smoke screen source passes through a smoke screen source discharge port 38, first discharge flow paths 44, 45 and 46, and a second discharge flow path 47 and is discharged from a final discharge port 48. Since the smoke screen source is radially discharged from the final discharge port 48, a diffusion rate of a smoke screen increases.
    Type: Application
    Filed: October 4, 2016
    Publication date: September 6, 2018
    Applicant: DAICEL CORPORATION
    Inventors: Katsuhiro NAKAHASHI, Takao KURODA, Atsushi MIMURA, Yuji HIGUCHI
  • Publication number: 20050196924
    Abstract: A first gate insulating film is formed on an SOI layer made of semiconductor of an SOI substrate stacking a supporting substrate, a buried insulting layer and the SOI layer in this order recited. A first gate electrode is formed on the first gate insulating film. The buried insulating layer positioned below the first gate electrode is removed to expose a bottom of the SOI layer. A second gate insulating film is formed on the exposed bottom of the SOI layer. A second gate electrode is formed on a surface of the second gate insulating film.
    Type: Application
    Filed: May 6, 2005
    Publication date: September 8, 2005
    Applicant: FUJITSU LIMITED
    Inventor: Atsushi Mimura