Abstract: A treatment liquid contains orthoperiodic acid and water, and the pH is 11 or more. It is preferable that the content of orthoperiodic acid in the treatment liquid is 0.01% to 5% by mass with respect to the total mass of the treatment liquid.

Abstract: An object of the present invention is to provide a chemical liquid for manufacturing a semiconductor, which is capable of forming a film exhibiting a high contact angle of water on a metal region in a case where the chemical liquid is brought into contact with a substrate having a metal region. The chemical liquid of a semiconductor manufacturing method of the present invention is a chemical liquid for manufacturing a semiconductor including a solvent and two or more specific compounds, in which the specific compound is a compound having a polar group and a vertical alignment group.

Abstract: An object of the present invention is to provide a chemical liquid for manufacturing a semiconductor, which is capable of forming an ALD film in a region targeted for ALD film formation and suppressing the formation of an ALD film in a region not targeted for ALD film formation, in a case where an ALD treatment is carried out after bringing the chemical liquid into contact with a predetermined substrate to form a modified film. Another object of the present invention is to provide a manufacturing method of a modified substrate using the above-mentioned chemical liquid, a manufacturing method of a laminate, and a chemical liquid container.

Abstract: The present disclosure is directed to etching compositions that are useful for, e.g., selectively hafnium oxide from a semiconductor substrate as an intermediate step in a multistep semiconductor manufacturing process.

Abstract: A liquid supply container includes a liquid inlet/outlet portion forming member including a cylindrical portion attached to an opening end of a storage portion configured to contain liquid. An inlet/outlet portion of liquid for the storage portion is formed in the cylindrical portion, and an valve is disposed in the inlet/outlet portion. A valve body of the valve is movably accommodated in a holder member. The cylindrical portion of the liquid inlet/outlet portion forming member forms a void portion surrounding the holder member in a circumferential direction between the cylindrical portion and the holder member. A rib or a flange portion is provided for dividing the void portion into at least two portions in the circumferential direction or a moving direction of the valve body.

Abstract: The present invention addresses the problem of providing a tobacco material in which there is limited occurrence of pieces of the tobacco material sticking together. The present invention solves this problem by means of a tobacco material in which the total protein content per 100 mg of the material, in terms of dry weight, is no higher than 5 mg.

Abstract: The present disclosure is directed to etching compositions that are useful for, e.g., selectively removing tantalum nitride (TaN) from a semiconductor substrate.

Abstract: An object of the present invention is to provide a composition having excellent ruthenium removability with respect to tungsten in a case of being applied to an object to be treated containing tungsten and ruthenium. The composition according to an embodiment of the present invention includes: periodic acid or a salt thereof, a quaternary ammonium salt; a resin containing a nitrogen atom; and a solvent.

Abstract: This disclosure relates to methods and compositions for treating a wafer having a pattern disposed on a surface of the wafer.

Abstract: An object of the present invention is to provide a treatment liquid for producing a semiconductor, which is capable of selectively removing Si in a case of being applied to an object to be treated containing SiGe and Si. The treatment liquid for manufacturing a semiconductor according to the present invention includes: a nitrogen-containing polymer; a quaternary ammonium hydroxide; an organic solvent having an SP value of 25 MPa1/2 or more; and water. Polyalkyleneimine is excluded from the nitrogen-containing polymer.

Abstract: An object of the present invention is to provide a composition that exhibits excellent dissolving ability and etching selectivity (particularly, etching selectivity for a Ru-containing substance and other metal-containing substances) to metal-containing substances (particularly, a Ru-containing substance), a kit for preparing the composition, and a method for treating a substrate by using the composition. The composition according to an embodiment of the present invention is a composition for removing metal-containing substances, and contains one or more periodic acid compounds selected from the group consisting of a periodic acid and a salt thereof, an azole compound, and an alkali compound.

Abstract: Provided is a semiconductor etching solution having a large etching ratio of SiGe relative to Si when an object containing Si and SiGe is treated and having excellent storage stability. The semiconductor etching solution includes: a fluoride ion source; a carboxylic acid; a percarboxylic acid; hydrogen peroxide; and bromide ions, and a content of the bromide ions is less than 500 mass ppm with respect to a total mass of the semiconductor etching solution.

Abstract: This disclosure relates to a cleaning composition that contains 1) at least one redox agent; 2) at least one chelating agent, the chelating agent being a polyaminopolycarboxylic acid; 3) at least one corrosion inhibitor, the corrosion inhibitor being a substituted or unsubstituted benzotriazole; 4) at least one sulfonic acid; and 5) water.

Abstract: An object of the present invention is to provide a composition that leaves few residues in a case where the composition is brought into contact with a Ru-containing substance to perform an etching treatment on the Ru-containing substance, and to provide a method for treating a substrate. The composition according to an embodiment of the present invention contains one or more periodic acid compounds selected from the group consisting of a periodic acid and a salt thereof, a quaternary ammonium salt represented by Formula (A), and a trialkylamine or a salt thereof.

Abstract: The present invention provides a composition for treating a semiconductor in which etching of silicon germanium is suppressed and a ratio of an etching rate of silicon to an etching rate of silicon germanium is large. In addition, the present invention provides a method for treating an object to be treated using a composition for treating a semiconductor. The composition for treating a semiconductor according to the present invention is a composition for treating a semiconductor including a quaternary ammonium salt having a hydroxyl group, a polar organic solvent, at least one nitrogen-containing compound selected from the group consisting of a compound represented by Formula (1), a compound represented by Formula (2), and salts thereof, and water, in which the mass ratio of the nitrogen-containing compound to the quaternary ammonium salt is 0.00001 to 0.1.

Abstract: Provided is a chemical liquid that has an excellent etching ability for an Al oxide on a substrate and excellent etching selectivity between Al oxide and a specific metal oxide. Also provided is a treatment method using the chemical liquid. The chemical liquid contains at least one hydroxy acid selected from the group consisting of a hydroxy acid and a salt thereof, a quaternary ammonium compound, a trialkylamine, and water, and is alkaline.

Abstract: An object of the present invention is to provide a washing solution for a semiconductor device, the washing solution being excellent in the dissolution suppressing performance with respect to a metal layer containing tungsten and also being excellent in the washing performance of a dry etching residue. Another object of the present invention is to provide a washing method for a semiconductor substrate. The washing solution for a semiconductor device according to the present invention is a washing solution for a semiconductor device, containing one or more hydroxylamine compounds one selected from the group consisting of hydroxylamine and a hydroxylamine salt, a predetermined component A represented by Formula (1) described later, and water, in which a mass ratio of a content of the hydroxylamine compound to a content of the component A is 5 to 200.

Abstract: The present invention provides a composition for a semiconductor device, which is excellent in residue removability. In addition, the present invention provides a substrate washing method using the treatment liquid. The composition for a semiconductor device contains alcohol, an aprotic polar solvent, an azole compound, an alkanolamine, and water.

Abstract: A chemical solution, which demonstrates excellent etching performance for transition metal-containing substances and has excellent defect inhibition performance, a method for manufacturing the chemical solution, and a method for treating a substrate. The chemical solution according to an embodiment includes one or more kinds of periodic acids selected from the group consisting of a periodic acid and a salt thereof, one or more kinds of first metal components selected from the group consisting of Ti and Zr, and water. In a case where the chemical solution includes one kind of first metal component, a content of the one kind of first metal component is 1 ppt by mass to 100 ppm by mass with respect to a total mass of the periodic acids.

Abstract: A piezo-electric element includes a piezo-electric element part, a support part, and a stretchable film. The piezo-electric element part includes a piezo-electric film and electrodes between which the piezo-electric film is sandwiched in a thickness direction. The support part supports a peripheral portion of the piezo-electric element part. The stretchable film is provided in an oscillation region located inside of the peripheral portion of the piezo-electric element part. The stretchable film also has a higher elasticity than that of the piezo-electric element part.