Patents by Inventor Atsushi Mizutani
Atsushi Mizutani has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240069047Abstract: A system comprises: a sample analyzing device reading measurements associated with a liquid sample; a display device displaying a graphical user interface (GUI) to a current user of the automated sample analyzer; processing circuitry; and a memory storing: a receiving engine which receives the measurements associated with the liquid sample from the sample analyzing device and storing the received measurements in memory; a configuration control engine which sets a configuration of a user model to correspond to the current user of the automated sample analyzer; a learning engine which detects and collect at least one pattern of interaction of the current user with the GUI; and a user interface engine which configures the GUI according to user-dependent configuration data of the configuration of the user model corresponding to the current user.Type: ApplicationFiled: December 22, 2021Publication date: February 29, 2024Applicant: Beckman Coulter, Inc.Inventors: Atsushi Matsushita, Kevin L. NOWAK, Takayuki MIZUTANI, Aaron P. O'Reilly
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Patent number: 11898123Abstract: This disclosure relates to a cleaning composition that contains 1) at least one redox agent; 2) at least one chelating agent, the chelating agent being a polyaminopolycarboxylic acid; 3) at least one corrosion inhibitor, the corrosion inhibitor being a substituted or unsubstituted benzotriazole; 4) at least one sulfonic acid; and 5) water.Type: GrantFiled: August 27, 2021Date of Patent: February 13, 2024Assignee: Fujifilm Electronic Materials U.S.A., Inc.Inventors: Emil A. Kneer, Thomas Dory, Atsushi Mizutani
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Publication number: 20240002725Abstract: An object of the present invention is to provide a composition that leaves few residues in a case where the composition is brought into contact with a Ru-containing substance to perform an etching treatment on the Ru-containing substance, and to provide a method for treating a substrate. The composition according to an embodiment of the present invention contains one or more periodic acid compounds selected from the group consisting of a periodic acid and a salt thereof, a quaternary ammonium salt represented by Formula (A), and a trialkylamine or a salt thereof.Type: ApplicationFiled: September 15, 2023Publication date: January 4, 2024Applicant: FUJIFILM CorporationInventors: Moe NARITA, Atsushi MIZUTANI
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Publication number: 20230416605Abstract: Provided is a chemical liquid that has an excellent etching ability for an Al oxide on a substrate and excellent etching selectivity between Al oxide and a specific metal oxide. Also provided is a treatment method using the chemical liquid. The chemical liquid contains at least one hydroxy acid selected from the group consisting of a hydroxy acid and a salt thereof, a quaternary ammonium compound, a trialkylamine, and water, and is alkaline.Type: ApplicationFiled: September 7, 2023Publication date: December 28, 2023Applicant: FUJIFILM CorporationInventors: Yuta SHIGENOI, Atsushi MIZUTANI, Tomonori TAKAHASHI
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Publication number: 20230420266Abstract: The present invention provides a composition for treating a semiconductor in which etching of silicon germanium is suppressed and a ratio of an etching rate of silicon to an etching rate of silicon germanium is large. In addition, the present invention provides a method for treating an object to be treated using a composition for treating a semiconductor. The composition for treating a semiconductor according to the present invention is a composition for treating a semiconductor including a quaternary ammonium salt having a hydroxyl group, a polar organic solvent, at least one nitrogen-containing compound selected from the group consisting of a compound represented by Formula (1), a compound represented by Formula (2), and salts thereof, and water, in which the mass ratio of the nitrogen-containing compound to the quaternary ammonium salt is 0.00001 to 0.1.Type: ApplicationFiled: September 8, 2023Publication date: December 28, 2023Applicant: FUJIFILM CorporationInventors: Yuta SHIGENOI, Atsushi Mizutani, Tomonori Takahashi
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Publication number: 20230402275Abstract: An object of the present invention is to provide a washing solution for a semiconductor device, the washing solution being excellent in the dissolution suppressing performance with respect to a metal layer containing tungsten and also being excellent in the washing performance of a dry etching residue. Another object of the present invention is to provide a washing method for a semiconductor substrate. The washing solution for a semiconductor device according to the present invention is a washing solution for a semiconductor device, containing one or more hydroxylamine compounds one selected from the group consisting of hydroxylamine and a hydroxylamine salt, a predetermined component A represented by Formula (1) described later, and water, in which a mass ratio of a content of the hydroxylamine compound to a content of the component A is 5 to 200.Type: ApplicationFiled: August 18, 2023Publication date: December 14, 2023Applicant: FUJIFILM CorporationInventor: Atsushi MIZUTANI
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Publication number: 20230365902Abstract: The present invention provides a composition for a semiconductor device, which is excellent in residue removability. In addition, the present invention provides a substrate washing method using the treatment liquid. The composition for a semiconductor device contains alcohol, an aprotic polar solvent, an azole compound, an alkanolamine, and water.Type: ApplicationFiled: July 24, 2023Publication date: November 16, 2023Applicant: FUJIFILM CorporationInventor: Atsushi MIZUTANI
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Publication number: 20230340326Abstract: A chemical solution, which demonstrates excellent etching performance for transition metal-containing substances and has excellent defect inhibition performance, a method for manufacturing the chemical solution, and a method for treating a substrate. The chemical solution according to an embodiment includes one or more kinds of periodic acids selected from the group consisting of a periodic acid and a salt thereof, one or more kinds of first metal components selected from the group consisting of Ti and Zr, and water. In a case where the chemical solution includes one kind of first metal component, a content of the one kind of first metal component is 1 ppt by mass to 100 ppm by mass with respect to a total mass of the periodic acids.Type: ApplicationFiled: June 27, 2023Publication date: October 26, 2023Applicant: FUJIFILM CorporationInventors: Nobuaki SUGIMURA, Tomonori Takahashi, Hiroyuki Seki, Atsushi Mizutani
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Patent number: 11767595Abstract: The present invention provides a chemical liquid that has an excellent ruthenium dissolving ability and leaves small amounts of residual ruthenium and sodium, a chemical liquid container, and a method for treating a substrate. The chemical liquid according to an embodiment of the present invention is a chemical liquid used for removing a ruthenium-containing substance on a substrate. The chemical liquid contains hypochlorous acid or a salt thereof and bromic acid or a salt thereof, in which a content of the hypochlorous acid or a salt thereof is 0.1% to 9.0% by mass with respect to a total mass of the chemical liquid, and a content of the bromic acid or a salt thereof is 0.001 to 15.0 ppm by mass with respect to the total mass of the chemical liquid.Type: GrantFiled: January 23, 2023Date of Patent: September 26, 2023Assignee: FUJIFILM CorporationInventor: Atsushi Mizutani
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Patent number: 11770657Abstract: A piezo-electric element includes a piezo-electric element part, a support part, and a stretchable film. The piezo-electric element part includes a piezo-electric film and electrodes between which the piezo-electric film is sandwiched in a thickness direction. The support part supports a peripheral portion of the piezo-electric element part. The stretchable film is provided in an oscillation region located inside of the peripheral portion of the piezo-electric element part. The stretchable film also has a higher elasticity than that of the piezo-electric element part.Type: GrantFiled: July 28, 2020Date of Patent: September 26, 2023Assignees: NISSHINBO MICRO DEVICES INC., DENSO CORPORATIONInventors: Hiroyuki Kuchiji, Naoki Masumoto, Hideo Yamada, Akihiko Teshigahara, Atsushi Mizutani
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Publication number: 20230287304Abstract: An object of the present invention to provide a treatment liquid for a semiconductor device, where the treatment liquid has an excellent corrosion prevention property with respect to a metal-containing layer and excellent removability of an object to be removed, and also has excellent solubility in a post-treatment liquid. In addition, an object of the present invention is to provide a substrate treatment method using the treatment liquid. The treatment liquid of the present invention is a treatment liquid for a semiconductor device, which contains water, a removing agent, and a copolymer, and the copolymer has a first repeating unit having at least one group selected from the group consisting of a primary amino group, a secondary amino group, a tertiary amino group, and a quaternary ammonium cation, and a second repeating unit different from the first repeating unit.Type: ApplicationFiled: February 16, 2023Publication date: September 14, 2023Applicant: FUJIFILM CorporationInventors: Tomonori TAKAHASHI, Yasuo SUGISHIMA, Atsushi MIZUTANI
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Patent number: 11732190Abstract: The present invention provides a chemical solution, which demonstrates excellent etching performance for transition metal-containing substances and has excellent defect inhibition performance, a method for manufacturing the chemical solution, and a method for treating a substrate. The chemical solution according to an embodiment of the present invention includes one or more kinds of periodic acids selected from the group consisting of a periodic acid and a salt thereof, one or more kinds of first metal components selected from the group consisting of Ti and Zr, and water. In a case where the chemical solution includes one kind of first metal component, a content of the one kind of first metal component is 1 ppt by mass to 100 ppm by mass with respect to a total mass of the periodic acids.Type: GrantFiled: July 28, 2020Date of Patent: August 22, 2023Assignee: FUJIFILM CorporationInventors: Nobuaki Sugimura, Tomonori Takahashi, Hiroyuki Seki, Atsushi Mizutani
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Publication number: 20230212485Abstract: An object of the present invention is to provide a treatment liquid for a semiconductor device, which is excellent in removal performance for residues present on a substrate, and to provide a substrate washing method using the treatment liquid. The treatment liquid of the present invention is a treatment liquid for a semiconductor device, which includes water, a basic compound, hexylene glycol, and a compound A that is at least one kind selected from the group consisting of isobutene, (E)-2-methyl-1,3-pentadiene, 4-methyl-1,3-pentadiene, 2,2,4-trimethyloxetane, 4-methyl-3-penten-2-ol, and 2,4,4,6-tetramethyl-1,3-dioxane.Type: ApplicationFiled: January 24, 2023Publication date: July 6, 2023Applicant: FUJIFILM CorporationInventors: Yasuo SUGISHIMA, Atsushi MIZUTANI
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Publication number: 20230160072Abstract: The present invention provides a chemical liquid that has an excellent ruthenium dissolving ability and leaves small amounts of residual ruthenium and sodium, a chemical liquid container, and a method for treating a substrate. The chemical liquid according to an embodiment of the present invention is a chemical liquid used for removing a ruthenium-containing substance on a substrate. The chemical liquid contains hypochlorous acid or a salt thereof and bromic acid or a salt thereof, in which a content of the hypochlorous acid or a salt thereof is 0.1% to 9.0% by mass with respect to a total mass of the chemical liquid, and a content of the bromic acid or a salt thereof is 0.001 to 15.0 ppm by mass with respect to the total mass of the chemical liquid.Type: ApplicationFiled: January 23, 2023Publication date: May 25, 2023Applicant: FUJIFILM CorporationInventor: Atsushi MIZUTANI
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Publication number: 20230112048Abstract: A chemical liquid contains phosphoric acid or a salt thereof, a polar aprotic solvent, water, and a compound that has a carboxy group and does not have a hydroxyl group or a salt of the compound, in which a content of the phosphoric acid or a salt thereof is 5.0% by mass or less with respect to a total mass of the chemical liquid, a content of the polar aprotic solvent is 50.0% by mass or more with respect to the total mass of the chemical liquid, and a content of the water is 2.0% by mass or more and less than 50.0% by mass with respect to the total mass of the chemical liquid.Type: ApplicationFiled: August 25, 2022Publication date: April 13, 2023Applicant: FUJIFILM CorporationInventors: Atsushi MIZUTANI, Yuta SHIGENOI
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Publication number: 20230048767Abstract: This disclosure relates to methods and compositions for treating a semiconductor substrate having a pattern disposed on a surface of the substrate.Type: ApplicationFiled: October 19, 2022Publication date: February 16, 2023Inventors: William A. Wojtczak, Kazutaka Takahashi, Atsushi Mizutani, Thomas Dory, Keeyoung Park
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Publication number: 20220406596Abstract: An object of the present invention is to provide a treatment method excellently flattens an object to be treated in a case where the treatment method is applied to an object to be treated having a metal layer. Another object of the present invention is to provide a treatment liquid for an object to be treated. The method for treating an object to be treated according to an embodiment of the present invention is a method for treating an object to be treated having a step A of performing an oxidation treatment on an object to be treated having a metal layer so as to form a metal oxide layer and a step B of bringing a treatment liquid into contact with the object to be treated obtained by the step A so as to dissolve and remove the metal oxide layer, in which the treatment liquid contains an organic solvent and an acidic compound, and a content of the organic solvent is 50% by mass or more with respect to a total mass of the treatment liquid.Type: ApplicationFiled: August 16, 2022Publication date: December 22, 2022Applicant: FUJIFILM CorporationInventors: Atsushi MIZUTANI, Yasuo SUGISHIMA
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Publication number: 20220393104Abstract: A treatment liquid contains orthoperiodic acid and water, and the pH is 11 or more. It is preferable that the content of orthoperiodic acid in the treatment liquid is 0.01% to 5% by mass with respect to the total mass of the treatment liquid.Type: ApplicationFiled: August 16, 2022Publication date: December 8, 2022Inventors: Keeyoung PARK, Atsushi MIZUTANI
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Patent number: 11508569Abstract: This disclosure relates to methods and compositions for treating a semiconductor substrate having a pattern disposed on a surface of the substrate. The methods can include a) supplying a sublimating material to a substrate having a pattern disposed on a surface thereof; b) maintaining the sublimating material on the surface for a time sufficient to modify the surface; c) solidifying the sublimating material on the surface; and d) removing by sublimation the sublimating material disposed on the surface.Type: GrantFiled: August 3, 2020Date of Patent: November 22, 2022Assignee: Fujifilm Electronic Materials U.S.A., Inc.Inventors: William A. Wojtczak, Kazutaka Takahashi, Atsushi Mizutani, Thomas Dory, Keeyoung Park
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Patent number: 11456412Abstract: A treatment liquid contains orthoperiodic acid and water, and the pH is 11 or more. It is preferable that the content of orthoperiodic acid in the treatment liquid is 0.01% to 5% by mass with respect to the total mass of the treatment liquid.Type: GrantFiled: June 2, 2020Date of Patent: September 27, 2022Assignee: FUJIFILM CORPORATIONInventors: Keeyoung Park, Atsushi Mizutani