Abstract: According to an aspect of the present invention, there is provided a steel containing, by unit mass %, C: 0.08% to 0.12%, Si: 0.05% to 0.50%, Mn: 1.50% to 3.00%, P: 0.040% or less, S: 0.020% or less, V: 0.010% or less, Ti: 0.010% or less, Nb: 0.005% or less, Cr: 1.00% to 2.50%, Cu: 0.01% to 0.50%, Ni: 0.75% to 1.60%, Mo: 0.10% to 0.50%, Al: 0.025% to 0.050%, N: 0.0100% to 0.0200%, Ca: 0% to 0.0100%, Zr: 0% to 0.0100%, Mg: 0% to 0.0100%, and a remainder including Fe and impurities, in which a ratio of an Al content to a N content is 2.6 or less, a ratio of a Mn content to a Ni content is 1.5 or more and 3.0 or less.

Abstract: According to an aspect of the present invention, there is provided a steel containing, by mass %, C: 0.08% to 0.12%, Si: 0.05% to 0.50%, Mn: 1.00% to 3.00%, P: 0.040% or less, S: 0.020% or less, Cr: 1.0% to 2.5%, Cu: 0.01% to 0.50%, Ni: 0.75% to 3.20%, Mo: 0.10% to 0.50%, Nb: 0.005% to 0.050%, Al: 0.010% to 0.100%, N: 0.0050% to 0.0150%, V: 0% to 0.300%, Ca: 0% to 0.0100%, Zr: 0% to 0.0100%, Mg: 0% to 0.0100%, and a remainder including Fe and impurities, in which a number density of Mn sulfides having an equivalent circle diameter of more than 5 m is 0 pieces/mm2 to 10 pieces/mm2, and an average aspect ratio of the Mn sulfides having an equivalent circle diameter of 1.0 m to 5.0 ?m is 1.0 or more and 10.0 or less.

Abstract: A steel bar according to one embodiment of the present invention includes predetermined chemical composition, wherein a quenching deflection in a cross section is 1.5 mm or less, wherein ?max and ?min is 1.5 mm or less, wherein a structure in a surface layer area includes 10 area % or less of ferrite and a remainder including one or more selected from a group consisting of a bainite and a martensite, wherein an average value of the grain size of a bcc phase in the surface layer area is 1.0 to 10.0 ?m, wherein an average value of the grain size of the bcc phase in a center area is 1.0 to 15.0 ?m, wherein a hardness of a region of which a depth from the surface is 50 ?m is Hv200 to Hv500, and wherein a total decarburized layer thickness DM-T is 0.20 mm or less.

Abstract: A steel wire rod or steel bar as hot-rolled, including: by mass %: C: 0.1 to 0.6%, Si: 0.01 to 1.5%, Mn: 0.05 to 2.5%, Al: 0.015 to 0.3%, and N: 0.0040 to 0.0150%, and P: limited to 0.035% or less and S: limited to 0.025% or less, and the balance substantially consisting of iron and unavoidable impurities, wherein a depth of d (mm) from the surface of the surface layer region with 20 HV 0.2 or more higher, relative to HV 0.2 that is the average hardness in the region where the depth from the surface is from sectional radius R×0.5 (mm) to the center satisfies the formula (1); the steel structure of the surface layer region has a ferrite fraction of 10% or less by area ratio, with the balance being one or two or more of martensite, bainite and pearlite; the steel structure where the depth from the surface is from the sectional radius R×0.

Abstract: A steel bar according to one embodiment of the present invention includes predetermined chemical composition, wherein a quenching deflection in a cross section is 1.5 mm or less, wherein ?max and ?min is 1.5 mm or less, wherein a structure in a surface layer area includes 10 area % or less of ferrite and a remainder including one or more selected from a group consisting of a bainite and a martensite, wherein an average value of the grain size of a bcc phase in the surface layer area is 1.0 to 10.0 ?m, wherein an average value of the grain size of the bcc phase in a center area is 1.0 to 15.0 ?m, wherein a hardness of a region of which a depth from the surface is 50 ?m is Hv200 to Hv500, and wherein a total decarburized layer thickness DM-T is 0.20 mm or less.

Abstract: A photoelectric conversion device that includes a work electrode, an opposed electrode, and an electrolyte-containing layer. In the work electrode, a metal oxide semiconductor layer supporting a dye is provided. The dye contains a cyanine compound that has a methine chain, an indolenine skeleton bonded with both ends of the methine chain, and anchor groups introduced to a nitrogen atom included in the indolenine skeleton. Electron injection efficiency to the metal oxide semiconductor layer is improved, and the dye is hardly exfoliated from the metal oxide semiconductor layer.

Abstract: The photoelectric conversion device described herein includes a working electrode having a dye-supported metal oxide electrode in which a dye is supported on a metal oxide layer. The dye includes a structure represented by general formula (I) wherein A is a structure having a maximum absorption wavelength ?max of 350 to 500 nm in a methanol solution; B is a cyanine skeleton having a maximum absorption wavelength ?max of 500 to 700 nm in a methanol solution; Z1 is any one divalent linking group selected from —CONR—, —NRCO—, —SO2NR—, and —NRSO2—; R in Z1 is a hydrogen atom, an alkyl group having 1 to 8 carbon atoms, or an arylalkyl group having 7 to 20 carbon atoms; Y1 and Y2 are each independently an alkylene group having 1 to 8 carbon atoms, or a single bond, and may be the same or different; r is 1 or 2; m and n are each independently an integer of 0 to 2; and (m+n) is 1 or more.

Abstract: A steel wire rod or steel bar as hot-rolled, including: by mass %: C: 0.1 to 0.6%, Si: 0.01 to 1.5%, Mn: 0.05 to 2.5%, Al: 0.015 to 0.3%, and N: 0.0040 to 0.0150%, and P: limited to 0.035% or less and S: limited to 0.025% or less, and the balance substantially consisting of iron and unavoidable impurities, wherein a depth of d (mm) from the surface of the surface layer region with 20 HV 0.2 or more higher, relative to HV 0.2 that is the average hardness in the region where the depth from the surface is from sectional radius R×0.5 (mm) to the center satisfies the formula (1); the steel structure of the surface layer region has a ferrite fraction of 10% or less by area ratio, with the balance being one or two or more of martensite, bainite and pearlite; the steel structure where the depth from the surface is from the sectional radius R×0.

Abstract: A photoelectric conversion device that includes a work electrode, an opposed electrode, and an electrolyte-containing layer. In the work electrode, a metal oxide semiconductor layer supporting a dye is provided. The dye contains a cyanine compound that has a methine chain, an indolenine skeleton bonded with both ends of the methine chain, and anchor groups introduced to a nitrogen atom included in the indolenine skeleton. Electron injection efficiency to the metal oxide semiconductor layer is improved, and the dye is hardly exfoliated from the metal oxide semiconductor layer.

Abstract: A photoelectric conversion device capable of improving conversion efficiency is provided. The photoelectric conversion device includes a work electrode, a counter electrode, and an electrolyte-containing layer. In the work electrode, a metal oxide semiconductor layer supporting a dye is provided. The dye contains a cyanine compound. The cyanine compound has heterocyclic skeletons containing indolenine skeletons bonded with both ends of a methine chain, an anchor group introduced to a nitrogen atom contained in the indolenine skeletons, and a phenanthrene skeleton contained in one of the heterocyclic skeletons. In the case where light enters the dye, electron injection efficiency to the metal oxide semiconductor layer is improved.

Abstract: A photoelectric conversion device capable of improving conversion efficiency is provided. The photoelectric conversion device includes a work electrode, an opposed electrode, and an electrolyte-containing layer. In the work electrode, a metal oxide semiconductor layer supporting a dye is provided. The dye contains a cyanine compound that has a methine chain, an indolenine skeleton bonded with both ends of the methine chain, and anchor groups introduced to a nitrogen atom included in the indolenine skeleton. Electron injection efficiency to the metal oxide semiconductor layer is improved, and the dye is hardly exfoliated from the metal oxide semiconductor layer.

Abstract: A photoelectric conversion element includes a working electrode having a dye-supported metal oxide electrode in which a dye is supported on a metal oxide layer, a compound having a structure represented by the following general formula (1): is used as the dye. wherein R1 to R4 are each independently a linear alkyl group having 4 to 20 carbon atoms and may be the same or different; A1 and A2 are each any one selected from the following aromatic ring group A (a pyrrole ring in the formula (1) is represented by an arc a to show a condensation position with the pyrrole ring), may be the same or different, and may have a substituent in an aromatic ring; Anp- is a p-valent anion; p is 1 or 2; and q is a coefficient for keeping a charge of the entire dye neutral.

Abstract: The photoelectric conversion device described herein includes a working electrode having a dye-supported metal oxide electrode in which a dye is supported on a metal oxide layer. The dye includes a structure represented by general formula (I) wherein A is a structure having a maximum absorption wavelength ?max of 350 to 500 nm in a methanol solution; B is a cyanine skeleton having a maximum absorption wavelength ?max of 500 to 700 nm in a methanol solution; Z1 is any one divalent linking group selected from —CONR—, —NRCO—, —SO2NR—, and —NRSO2—; R in Z1 is a hydrogen atom, an alkyl group having 1 to 8 carbon atoms, or an arylalkyl group having 7 to 20 carbon atoms; Y1 and Y2 are each independently an alkylene group having 1 to 8 carbon atoms, or a single bond, and may be the same or different; r is 1 or 2; m and n are each independently an integer of 0 to 2; and (m+n) is 1 or more.

Abstract: A photoelectric conversion element includes a working electrode having a dye-supported metal oxide electrode in which a dye is supported on a metal oxide layer, a compound having a structure represented by the following general formula (1): is used as the dye. wherein R1 to R4 are each independently a linear alkyl group having 4 to 20 carbon atoms and may be the same or different; A1 and A2 are each any one selected from the following aromatic ring group A (a pyrrole ring in the formula (1) is represented by an arc a to show a condensation position with the pyrrole ring), may be the same or different, and may have a substituent in an aromatic ring; Anp- is a p-valent anion; p is 1 or 2; and q is a coefficient for keeping a charge of the entire dye neutral.

Abstract: A photoelectric conversion device capable of improving conversion efficiency is provided. The photoelectric conversion device includes a work electrode, a counter electrode, and an electrolyte-containing layer. In the work electrode, a metal oxide semiconductor layer supporting a dye is provided. The dye contains a cyanine compound. The cyanine compound has heterocyclic skeletons containing indolenine skeletons bonded with both ends of a methine chain, an anchor group introduced to a nitrogen atom contained in the indolenine skeletons, and a phenanthrene skeleton contained in one of the heterocyclic skeletons. In the case where light enters the dye, electron injection efficiency to the metal oxide semiconductor layer is improved.

Abstract: A photoelectric conversion device capable of improving conversion efficiency is provided. The photoelectric conversion device includes a work electrode, an opposed electrode, and an electrolyte-containing layer. In the work electrode, a metal oxide semiconductor layer supporting a dye is provided. The dye contains a cyanine compound that has a methine chain, an indolenine skeleton bonded with both ends of the methine chain, and anchor groups introduced to a nitrogen atom included in the indolenine skeleton. Electron injection efficiency to the metal oxide semiconductor layer is improved, and the dye is hardly exfoliated from the metal oxide semiconductor layer.

Abstract: Provided is a photoelectric conversion device capable of improving a conversion efficiency. In a dye-sensitized photoelectric conversion device including a working electrode and a facing electrode, and an electrolyte inclusion, a dye is carried on a metal-oxide semiconductor layer of the working electrode. The dye includes cyanine dye having a benzyl group and an indolenine skeleton. Therefore, crystallization of the dye on the surface of the metal-oxide semiconductor layer is suppressed.

Abstract: Provided are a metal oxide electrode for dye-sensitized solar cell excellent in the mechanical strength of the metal oxide layer and capable of improving durability of the cell without excessively damaging the cell characteristics; a dye-sensitized solar cell excellent in cell characteristics and durability; and the like. A metal oxide electrode for dye-sensitized solar cell has a substrate and a metal oxide layer provided on the substrate, the metal oxide layer containing a metal oxide and a phosphoric acid based surfactant. The phosphoric acid based surfactant is contained in an amount of preferably from 0.1 to 30 wt % relative to the metal oxide.

Abstract: An electrode for photoelectric conversion elements having high initial characteristics and excellent durability, a manufacturing method of the electrode for photoelectric conversion elements, and a dye-sensitized solar cell are provided. An electrode for photoelectric conversion elements according to the present invention has a structure in which a metal oxide layer containing zinc oxide is provided on a base. The metal oxide layer has a plurality of bump-like protrusions formed so as to protrude radially from the base side, and also has an emission peak in a region of 350 to 400 nm in cathodoluminescence measurement. The metal oxide layer is preferably heat treated at 220 to 500° C.

Abstract: The present invention provides a photoelectric conversion device capable of improving conversion efficiency. The photoelectric conversion device includes a working electrode and a facing electrode, and a semi-solid electrolyte containing layer supported between the working electrode and the facing electrode. The electrolyte containing layer contains a particle, an organic solvent, and ionic liquid. An electron is efficiently injected from dye excited by absorbing light to a metal oxide semiconductor layer, and the electron quickly travels from the metal oxide semiconductor layer to an external circuit in comparison with the case where the electrolyte containing layer does not contain the organic solvent.