Patents by Inventor Atsushi Nakane

Atsushi Nakane has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240112918
    Abstract: A plasma processing system includes: first and second processing chambers having respective first and second substrate supports; a transport chamber connected to the first and second processing chambers, and having a transport device; and a controller that executes processing of (a) disposing a substrate including a silicon-containing film having a recess portion and a mask on the silicon-containing film on the first substrate support of the first processing chamber, (b) forming a carbon-containing film on a side wall of the silicon-containing film defining the recess portion in the first processing chamber, (c) transporting the substrate from the first processing chamber to the second processing chamber via the transport chamber and disposing the substrate on the second substrate support, and (d) etching a bottom portion of the recess portion where the carbon-containing film is formed by using a plasma formed from a first processing gas in the second processing chamber.
    Type: Application
    Filed: October 3, 2023
    Publication date: April 4, 2024
    Inventors: Noboru SAITO, Yuta NAKANE, Atsushi TAKAHASHI, Shinya ISHIKAWA, Satoshi OHUCHIDA, Maju TOMURA
  • Publication number: 20240112922
    Abstract: In one exemplary embodiment, there is provided an etching method. The method includes (a) preparing a substrate, the substrate comprising a silicon-containing film and a mask, the silicon-containing film including a recess, the mask being provided on the silicon-containing film and including an opening that exposes the recess; (b) forming a carbon-containing film on a side wall of the silicon-containing film, the side wall defining the recess; and (c) by using a plasma generated from a processing gas, forming a protective film containing tungsten on the carbon-containing film and etching the silicon-containing film in the recess, the processing gas including a fluorine-containing gas and a tungsten-containing gas.
    Type: Application
    Filed: October 2, 2023
    Publication date: April 4, 2024
    Inventors: Ryo MATSUBARA, Atsushi TAKAHASHI, Yuta NAKANE, Noboru SAITO
  • Publication number: 20230275243
    Abstract: A fuel cell includes a discharge structure that discharges water generated in a cathode electrode in association with an electrode reaction in the MEA to the outside. The discharge structure includes a discharge path through which air that is an oxidant flows, a passage that communicably connects an oxidant supply flow path and the discharge path and that moves water generated in the cathode electrode to the discharge path, and a discharge portion that discharges the generated water moved to the discharge path to the outside.
    Type: Application
    Filed: August 25, 2021
    Publication date: August 31, 2023
    Applicants: JTEKT CORPORATION, NATIONAL UNIVERSITY CORPORATION KANAZAWA UNIVERSITY
    Inventors: Takuya TSUJIGUCHI, Yasuhide TAKEDA, Motoo NAKAI, Toshiyuki SAITO, Atsushi KUBO, Mototake FURUHASHI, Ayumi NAKASONE, Atsushi NAKANE, Fumitaka ACHIWA
  • Publication number: 20230094952
    Abstract: An object of the present invention is to provide a method for culturing one or more hematopoietic stem cells applicable to hematopoietic stem cell transplantation, and a method for producing such one or more hematopoietic stem cells.
    Type: Application
    Filed: December 25, 2020
    Publication date: March 30, 2023
    Applicants: Sumitomo Pharma Co., Ltd., NextGeM Inc.
    Inventors: Atsushi Nakane, Hidetaka Nagata, Shigehiro Asano, Masanori Miyanishi, Hitoshi Suda, Yusuke Shioda