Abstract: An internal potential generation circuit operates with the potential levels of an output node N.sub.H1 of a first boosting circuit and an output node N.sub.H2 of a second boosting circuit maintained in common in response to a high voltage switch circuit attaining a conductive state at the initial stage of the operation of the internal potential generation circuit. After the output potential level of the second boosting circuit arrives at a predetermined potential level, the high voltage switch circuit is cut off, whereby the first and second boosting circuits drive independently the potential level of corresponding output nodes.

Abstract: A reset power down mode designating signal and first and second write protect signals are provided to a control circuit. According to the states of these external control signals, the status of unconditional inhibition, unconditional permission, and lock bit (LB) dependency for the protect status of data rewrite is set for each memory block group of a memory array. Therefore, the write protect status can be set in a flexible manner for a nonvolatile semiconductor memory device.

Abstract: A cartridge type feeding container for a cosmetics stick has a structure such that the diameter can be easily reduced, the product can be easily assembled, and the number of parts employed therein can be reduced. A cartridge (5) in the main body (1) has a push spring (17) which urges a chuck (13) toward a retracting direction. The push spring (17) is mounted between the rear end of a bar (15) of the chuck (13) and a partition member (47) of a cartridge cylinder (11). On the cartridge cylinder (11) and on a push rod (23) are provided synchronously engageable sections (59 and 71) which are engageable with each other to render the cartridge cylinder (11) and the push rod (23) non-rotatable relative to each other.

Abstract: A mechanism for feeding a core material such as a stick type cosmetic material includes an internal thread member having a spirally grooved inner surface and a push rod provided with a group of protrusions which engage with the spiral groove of the internal thread member; wherein the push rod is advanced or retracted by turning the internal thread member and the push rod engaged therewith relative to each other to feed the core material housed in a container to be slidably moved the push rod. Since the protrusions on the surface of the push rod can be of a simple shape, the push rod can be produced easily, and this effect manifests particularly in a comparison with the case where a thread must be formed on the push rod over the entire length thereof, requiring laborious thread machining or die making.

Abstract: A cosmetic container having a coil-spring shaped holding portion, which is provided at the front end of a push rod, for holding a stick type cosmetic material. The rear end of a stick type cosmetic material is inserted into the center hollow-portion of the coil-spring holding portion. Ribs are optionally provided on the inner surface of the coil-spring holding portion for biting into a stick type cosmetic material to more securely hold the stick type cosmetic material. Even without these ribs, the spring-type holding portion holds a stick type cosmetic material elastically tight by making the inner diameter of the coil-spring smaller, because the coil-spring shaped holding portion holds a stick type cosmetic material elastically. If pressure is applied to a held stick type cosmetic material from the side, the coil-spring shaped holding portion bends and prevents damage to the held stick type cosmetic material.

Abstract: In a semiconductor storage device wherein data lines connected to a plurality of memory cells selected by a select operation of word lines are sequentially selected by using an address signal generated by an address counter to serially read data in individual unit of at least one word line: redundancy data lines disposed perpendicular to the word lines are provided; a column select circuit receiving a Y address signal selects one of the data lines or redundancy data lines; a redundancy memory circuit stores, in the order of the selection operation by the column select circuit, a defect address signal of a defect data line among the data lines and a redundancy address signal of a corresponding redundancy data line; an address comparator circuit compares one defect address signal read from the redundancy memory circuit with an address signal generated by the address counter; an address signal for the redundancy memory circuit is generated by performing a count operation in response to a coincidence signal gener

Abstract: A nonvolatile semiconductor memory device is provided including a DINOR (Divided Bit Line NOR) type cell that allows further reduction of the cell size while ensuring immunity from drain-disturb. In the nonvolatile semiconductor memory device, a sub-bit line is formed to have a length corresponding to the length of 16-1024 memory cell transistors. Memory cell transistors corresponding to the length of that sub-bit line are connected to the sub-bit line. Thus, the effective cell size is reduced while ensuring immunity from drain-disturb.

Abstract: An NAND gate for outputting an output establishment detection signal in response to the fact that a complementary output of a latch type sense amplifier has been established is provided. When a tristate buffer is activated by signal, a word line which has been in a selected state is rendered non-selected state. Accordingly, current can be prevented from leaking from a power supply line to a ground line in tristate buffer. In addition, column current Ic flowing through memory cells can be minimized in response to the fact that word line has been set to a selected state.

Abstract: A bit line reset transistor resets every second bit line of a plurality of bit lines to be write-verified. At this time, a transfer gate disconnects a column latch from the unreset bit line. Then, the unreset bit line is precharged in accordance with data of the column latch, while applying a verify voltage to a word line. Then, a source line transistor grounds a source line, and the bit line is connected to the column latch, so that data corresponding to a value of a threshold voltage of the memory cell is held by the column latch, and a write verifying operation is performed.

Abstract: A BiMOS amplifier device includes one stage which can function as both a level-shift and buffer stage and an amplifier stage. The amplifier includes first and second bipolar transistors having their bases connected to first and second input terminals, respectively, having their collectors connected to a point of first potential, and having their emitters connected to the sources of first and second MOS transistors, respectively. The drains of the first and second MOS transistors are connected through respective impedance means to a point of second potential. The gate of each of the MOS transistors is connected to the drain of the other MOS transistor. An output terminal is connected to the drain of at least one of the MOS transistors.

Abstract: A semiconductor memory device includes a memory cell array divided into a plurality of block. In one region on the memory chip, four blocks, two input/output circuits, and two data buses are arranged. In the other region on the chip, four blocks, two input/output circuits, and two data buses are arranged. Each block in each region is divided into two sub-blocks corresponding to the two input/output circuits. Each data bus is connected between the corresponding input/output circuit in the same region and the corresponding two sub-blocks.

Abstract: A level converting circuit has a function of converting an input signal of a first logic level into an output signal of a second logic level. The level converting circuit includes a first transistor responsive to an input signal IN for charging an output node to the ground potential, a second transistor responsive to the input signal IN for lowering the potential of the output node to the negative potential VEE, a third transistor responsive to the potential of the output node for controlling operations of the second transistor, and fourth and fifth transistors responsive to a delay signal with delay to an output of the level converting circuit for controlling the amount of current flowing through the output node. An inverted, amplified signal of the output node is applied to the gate of the fourth transistor, and a non-inverted, amplified signal of the output node is applied to the gate of the fifth transistor.

Abstract: A divided word line driving circuit applicable to a static random access memory (SRAM) employing a divided word line method is disclosed. When a divided word line is activated, the potential at the input of an inverter for driving the word line is brought to a low level. When the input signals S1 and S2 are both at a low level, the divided word line is brought to an inactive state. The input of the inverter is charged by a transistor 101 in addition to a transistor 102 which is always on. In other words, transistor 101 contributes to accelerating charging of the input of the inverter. Consequently, the potential of the divided word line is made to rise at high speed, so that access operation at high speed can be achieved. The circuit is implemented with a small number of transistors, so that it becomes also possible to enhance the degree of integration of a SRAM.

Abstract: An amplifier circuit of a symmetrical type is implemented with load transistors 1, 3, 5, 6 and input transistors 2, 4. Load transistors 1, 5 and input transistor 2 constitute a first inverter, and load transistors 3, 6 and input transistor 4 constitute a second inverter. A change in the output potential of each inverter is transmitted to a load transistor of the other inverter and increases the fluctuation of the potential of an output signal. A transistor 9 or 10 for current control is arranged between an input transistor and ground or between a load transistor and a power supply. The transistor 9 or 10 for current control interrupts through current when operation of the amplifier circuit is unnecessary and enhances the gain when the amplifier circuit is on operation. The gain is enhanced by setting the conductance of the load transistor and the conductance of the input transistor on predetermined conditions.

Abstract: Readout data amplified by each local sense amplifier is provided to the corresponding readout data bus. Each readout data bus is connected to a plurality of main sense amplifiers (for example, a main sense amplifier for x1 and a main sense amplifier for x2). Each main sense amplifier includes a clamp transistor for clamping the potential of the readout data bus always to a constant potential, whereby increase in speed of readout data is performed by the clamp transistor. The base potential of the clamp transistor in each main sense amplifier is controlled in response to a switching control signal. As a result, a plurality of main sense amplifiers connected to one readout data bus are switched selectively.

Abstract: A semiconductor integrated circuit includes a plurality of emitter-coupled logic (ECL) circuits (10) and circuitry (5, 6a, 6b) generating a reference potential to determine the logic threshold value of the ECL circuits. The reference potential generating circuitry is provided near a first pad (2) for a first supply voltage (VCC) and includes a circuit (5) for generating a first reference potential from the first supply voltage, and a circuit (6a, 6b) provided one for each the group of ECL circuits and provided near an associated ECL circuit group for generating a second reference potential from the first reference potential to generate a reference potential as the logic threshold potential of a corresponding ECL circuit.

Abstract: Disclosed is a sense amplifier employing an emitter coupled logic (ECL) circuit. A constant voltage generating circuit independent of a change or a fluctuation of a power supply voltage level is provided. Two current-mirror circuits supply constant currents to the ECL circuit based on a generated constant voltage. Since a constant current independent of the change of power supply voltage level is supplied to the ECL circuit, the ECL circuit reliably converts a small potential difference generated between I/O lines into a current signal. Accordingly, no erroneous reading operation is performed.

Abstract: An ECL buffer circuit includes an input portion for receiving an input signal at an ECL level, a current switch portion and an output portion. The input portion includes a bipolar transistor (Q1), a level-shift diode (D1) and a constant current source (CS1). The current switch portion includes a first and a second switch circuits and a constant current source (CS2). Each switch circuit includes a resistor (R1, R2) and a bipolar transistor (Q2, Q3). The output portion includes a first and a second output circuits and a constant current source (CS3). Each output circuit includes an emitter follower transistor (Q4, Q5) and a bipolar transistor (Q6, Q7). The first output circuit receives an input signal from the input portion, and the second output circuit receives a reference voltage (V.sub.BB). A by-pass resistor (R3, R4) is connected between the base and the emitter of an emitter follower transistor (Q4, Q5) of each output circuit.

Abstract: An ECL buffer circuit includes an input portion for receiving an input signal at an ECL level, a current switch portion and an output portion. The input portion includes a bipolar transistor (Q1), a level-shift diode (D1) and a constant current source (CS1). The current switch portion includes a first and a second switch circuits and a constant current source (CS2). Each switch circuit includes a resistor (R1, R2) and a bipolar transistor (Q2, Q3). The output portion includes a first and a second output circuits and a constant current source (CS3). Each output circuit includes an emitter follower transistor (Q4, Q5) and a bipolar transistor (Q6, Q7). The first output circuit receives an input signal from the input portion, and the second output circuit receives a reference voltage (V.sub.BB). A by-pass resistor (R3, R4) is connected between the base and the emitter of an emitter follower transistor (Q4, Q5) of each output circuit.

Abstract: Disclosed is a sense amplifier employing an emitter coupled logic (ECL) circuit. A constant voltage generating circuit independent of a change or a fluctuation of a power supply voltage level is provided. Two current-mirror circuits supply constant currents to the ECL circuit based on a generated constant voltage. Since a constant current independent of the change of power supply voltage level is supplied to the ECL circuit, the ECL circuit reliably converts a small potential difference generated between I/O lines into a current signal. Accordingly, no erroneous reading operation is performed.