Patents by Inventor Atsushi Oido

Atsushi Oido has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Process for producing thin film by epitaxial growth
    Patent number: 5662740
    Abstract: In the manufacture of a single crystal film by epitaxial growth method, defects such as cracking are avoided by increasing the deviation of the lattice constant of the resulting film in the direction of growth from the substrate. Preferably, the deviation is increased at the rate of (0.4.about.9).times.10.sup.-4 %/.mu.m.
    Type: Grant
    Filed: October 17, 1994
    Date of Patent: September 2, 1997
    Assignee: TDK Corporation
    Inventors: Kazuhito Yamasawa, Atsushi Oido, Akio Nakata, Nobuya Uchida
  • Process for producing thin film by epitaxial growth
    Patent number: 5434101
    Abstract: In the manufacture of a single crystal film by epitaxial growth method, defects such as cracking are avoided by increasing the deviation of the lattice constant of the resulting film in the direction of growth from the substrate. Preferably, the deviation is increased at the rate of (0.4.about.9).times.10.sup.-4 %/.mu.m.
    Type: Grant
    Filed: March 2, 1993
    Date of Patent: July 18, 1995
    Assignee: TDK Corporation
    Inventors: Kazuhito Yamasawa, Atsushi Oido, Akio Nakata, Nobuya Uchida