Abstract: A developer nozzle is moved from a periphery of a wafer toward the central portion while an exposed substrate held at a spin chuck is being rotated about a vertical axis and while a developing solution is being discharged from the developer nozzle, and this way the developing solution is supplied to the surface of the wafer, the developer nozzle having a slit-like ejection port whose longitudinal direction is oriented to the direction perpendicular to the radial direction of the wafer. The movement speed of the nozzle is higher than a case where a nozzle with a small-diameter circular nozzle is used, and this enables a development time to be reduced. Further, the thickness of a developing solution on a substrate can be reduced, so that the developing solution can be saved.

Abstract: A developing apparatus for developing a substrate whose surface is coated with a coating solution and then exposed includes a substrate supporting unit for horizontally supporting the substrate, a rotation driving mechanism for rotating the substrate supporting unit forwardly or backwardly with respect to a vertical axis, a developer nozzle, disposed to face a surface of the substrate supported by the substrate supporting unit, having a strip-shaped injection opening extended along a direction extending from a periphery of the substrate toward a central portion thereof, a moving unit for moving the developer nozzle from an outer portion of the substrate toward the central portion thereof, and a controller for controlling operations such that while the substrate is rotated forwardly by the rotation driving mechanism, a developer is supplied through the injection opening to the surface of the substrate by moving the developer nozzle and, then, the substrate is rotated backwardly by the rotation driving mechanis

Abstract: A resist pattern slimming treatment method of performing a slimming treatment on a resist pattern formed on a substrate includes: a slimming treatment step of performing a slimming treatment on the resist pattern by applying a reactant solubilizing the resist pattern onto the resist pattern, then performing a heat treatment on the resist pattern under a heat treatment condition determined in advance, and then performing a developing treatment on the resist pattern; and a first line width measurement step of measuring a line width of the resist pattern before the slimming treatment step. The heat treatment condition is determined based on a measurement value of the line width measured in the first line width measurement step.

Abstract: A resist pattern slimming treatment method includes: a slimming treatment step of performing a slimming treatment on a resist pattern by applying a solution containing an acid onto a substrate having the resist pattern formed thereon, then performing a heat treatment, and then performing a developing treatment. A database storing kinds of resist material for the resist pattern, concentrations of acid contained in a solution to be applied onto the substrate having the resist pattern formed thereon, and line widths of the resist pattern corresponding to the kinds of resist material and the concentrations of acid is prepared in advance. The concentration of the acid contained in the solution used in the slimming treatment step is based on a concentration of the acid obtained from the database, using, as search keys, the kind of resist material and a target value of the line width of the resist pattern.

Abstract: A developer nozzle is moved from a periphery of a wafer toward the central portion while an exposed substrate held at a spin chuck is being rotated about a vertical axis and while a developing solution is being discharged from the developer nozzle, and this way the developing solution is supplied to the surface of the wafer, the developer nozzle having a slit-like ejection port whose longitudinal direction is oriented to the direction perpendicular to the radial direction of the wafer. The movement speed of the nozzle is higher than a case where a nozzle with a small-diameter circular nozzle is used, and this enables a development time to be reduced. Further, the thickness of a developing solution on a substrate can be reduced, so that the developing solution can be saved.

Abstract: A developing apparatus for developing a substrate whose surface is coated with a coating solution and then exposed includes a substrate supporting unit for horizontally supporting the substrate, a rotation driving mechanism for rotating the substrate supporting unit forwardly or backwardly with respect to a vertical axis, a developer nozzle, disposed to face a surface of the substrate supported by the substrate supporting unit, having a strip-shaped injection opening extended along a direction extending from a periphery of the substrate toward a central portion thereof, a moving unit for moving the developer nozzle from an outer portion of the substrate toward the central portion thereof, and a controller for controlling operations such that while the substrate is rotated forwardly by the rotation driving mechanism, a developer is supplied through the injection opening to the surface of the substrate by moving the developer nozzle and, then, the substrate is rotated backwardly by the rotation driving mechanis

Abstract: A heat processing device that bakes a substrate having a resist coating film containing a volatile substance, includes a hot plate 2, a hot plate temperature control unit 3, a box member 1a, 5, 32 that defines a heat space 30 and a fluid space 31, air supply unit 18, 18A and suction unit 10, 10A that create an air current flowing in a horizontal direction in the fluid space 31, and a controller 22, 22A that controls the hot plate temperature control unit 3, the air supply unit 18, 18A, suction unit 10, 10A and the gas temperature control unit 19 so that a relationship of TF<TH?TS?TP is satisfied where TP represents a temperature of the hot plate, TS represents an upper surface temperature of the substrate W, TH represents a temperature of the heat space and TF represents a temperature of the fluid space.

Abstract: A developer nozzle is moved from a periphery of a wafer toward the central portion while an exposed substrate held at a spin chuck is being rotated about a vertical axis and while a developing solution is being discharged from the developer nozzle, and this way the developing solution is supplied to the surface of the wafer, the developer nozzle having a slit-like ejection port whose longitudinal direction is oriented to the direction perpendicular to the radial direction of the wafer. The movement speed of the nozzle is higher than a case where a nozzle with a small-diameter circular nozzle is used, and this enables a development time to be reduced. Further, the thickness of a developing solution on a substrate can be reduced, so that the developing solution can be saved.

Abstract: The present invention provides a method of supplying a developing solution, stably, onto a substrate, upon providing a developing process to the substrate which has been coated with a resist and subjected to an exposure process. In this method, the developing solution is supplied onto the substrate from a first developing solution nozzle, so as to form a ribbon-like region on the surface of the substrate, while rotating the substrate about a vertical axis via a substrate holding part, wherein one end of the ribbon-like region is oriented toward a central portion of the substrate. At this time, by shifting a position of the ribbon-like region in which the developing solution is supplied, a liquid film of the developing solution can be formed on the surface of the substrate.

Abstract: The temperature of a developing solution is varied depending on the type of resist or the resist pattern. The developing solution is applied while scanning a developer nozzle having a slit-shaped ejection port that has a length matching the width of the effective area of the substrate. After leaving the substrate with the developing solution being coated thereon for a predetermined period of time, a diluent is supplied while scanning a diluent nozzle, thereby substantially stopping the development reaction and causing the dissolved resist components to diffuse. A desired amount of resist can be quickly dissolved through the control of the developing solution temperature, while the development can be stopped before the dissolved resist components exhibit adverse effect through the supply of the diluent a predetermined timing, whereby achieving a pattern having a uniform line width and improved throughput.

Abstract: A heat processing device that bakes a substrate having a resist coating film containing a volatile substance, includes a hot plate 2, a hot plate temperature control unit 3, a box member 1a, 5, 32 that defines a heat space 30 and a fluid space 31, air supply unit 18, 18A and suction unit 10, 10A that create an air current flowing in a horizontal direction in the fluid space 31, and a controller 22, 22A that controls the hot plate temperature control unit 3, the air supply unit 18, 18A, suction unit 10, 10A and the gas temperature control unit 19 so that a relationship of TF<TH?TS?TP is satisfied where TP represents a temperature of the hot plate, TS represents an upper surface temperature of the substrate W, TH represents a temperature of the heat space and TF represents a temperature of the fluid space.

Abstract: A developing apparatus for developing a substrate whose surface is coated with a coating solution and then exposed includes a substrate supporting unit for horizontally supporting the substrate, a rotation driving mechanism for rotating the substrate supporting unit forwardly or backwardly with respect to a vertical axis, a developer nozzle, disposed to face a surface of the substrate supported by the substrate supporting unit, having a strip-shaped injection opening extended along a direction extending from a periphery of the substrate toward a central portion thereof, a moving unit for moving the developer nozzle from an outer portion of the substrate toward the central portion thereof, and a controller for controlling operations such that while the substrate is rotated forwardly by the rotation driving mechanism, a developer is supplied through the injection opening to the surface of the substrate by moving the developer nozzle and, then, the substrate is rotated backwardly by the rotation driving mechanis

Abstract: In a developing processing of a wafer having a resist film low in the dissolving rate in a developing solution formed thereon and subjected to an exposure treatment, a developing solution of a low concentration is supplied first onto a wafer and the wafer is left to stand for a prescribed time to permit a developing reaction to proceed, followed by further supplying a developing solution having a concentration higher than that of the developing solution supplied first onto the wafer, leaving the substrate to stand and subsequently rinsing the wafer, thereby improving the uniformity of the line width in the central portion and the peripheral portion of the wafer.

Abstract: In a developing processing of a wafer having a resist film low in the dissolving rate in a developing solution formed thereon and subjected to an exposure treatment, a developing solution of a low concentration is supplied first onto a wafer and the wafer is left to stand for a prescribed time to permit a developing reaction to proceed, followed by further supplying a developing solution having a concentration higher than that of the developing solution supplied first onto the wafer, leaving the substrate to stand and subsequently rinsing the wafer, thereby improving the uniformity of the line width in the central portion and the peripheral portion of the wafer.

Abstract: In a developing processing of a wafer having a resist film low in the dissolving rate in a developing solution formed thereon and subjected to an exposure treatment, a developing solution of a low concentration is supplied first onto a wafer and the wafer is left to stand for a prescribed time to permit a developing reaction to proceed, followed by further supplying a developing solution having a concentration higher than that of the developing solution supplied first onto the wafer, leaving the substrate to stand and subsequently rinsing the wafer, thereby improving the uniformity of the line width in the central portion and the peripheral portion of the wafer.

Abstract: In a developing processing of a wafer having a resist film low in the dissolving rate in a developing solution formed thereon and subjected to an exposure treatment, a developing solution of a low concentration is supplied first onto a wafer and the wafer is left to stand for a prescribed time to permit a developing reaction to proceed, followed by further supplying a developing solution having a concentration higher than that of the developing solution supplied first onto the wafer, leaving the substrate to stand and subsequently rinsing the wafer, thereby improving the uniformity of the line width in the central portion and the peripheral portion of the wafer.