Abstract: A feeding reservoir 11 for intermittently or continuously feeding granular raw material into a pulling apparatus 1, a chamber 13 connected to the feeding reservoir 11 through a gate valve 12, a granular raw material supply section 15 by which the granular raw material is supplied to the chamber 13 through a gate valve 14 and a pressure adjustment means 20 which adjusts the inner pressure of the chamber 13 is provided, and the granular raw material is fed to the feeding reservoir 11 while maintaining the inner pressure of the feeding reservoir 11 as the same as the inner pressure of the single crystal pulling apparatus 1. This feeding method and structure makes it possible to feed an additional amount of granular raw material even during the continuous charging process and or the recharging process without interrupting the process and also to pull a heavy single crystal rod with a large diameter without increasing the capacity of the feeding reservoir.

Abstract: A crystal pulling apparatus is disclosed which employs the Czochralski method. The crystal pulling apparatus is operated while a heater for heating a material melt in a crucible is controlled by the main controller of a main system. When maintenance of a heating state is disabled for some reason, a relay of a signal changeover circuit is switched so as to maintain the heating state under control of the backup controller of a backup system, thereby maintaining the material melt in a molten state. Thus, even when it becomes impossible for the main system to heat the material melt within the crucible, the material melt can be prevented from becoming solidified.

Abstract: A method for measuring a diameter of a single crystal ingot pulled up in a single crystal pulling apparatus comprising: calculating the weight of the pulled-up single crystal, calculating the descent amount of the melt surface relative to the crucible wall from the calculated pulled-up weight of the grown single crystal, and then either correcting the value of the ingot diameter actually measured by the optical sensor in response to the descent amount of the melt surface level or raising the crucible by an amount equal to the descent amount of the surface level.

Abstract: The cutting process is executed after the grinding process and for one semiconductor ingot, one grinding device and one inner diameter saw slicing machine are used to perform grinding process and cutting process respectively. During the grinding process, the entirety of the cylindrical body portion of the semiconductor ingot is cylindrically ground, a portion of the tail end is cylindrically ground, the orientation flat position is determined and an orientation flat is formed by surface grinding. During the cutting process the tail portion is cut off and a sample for lifetime measurement is taken and a wafer sample is cut off from the end of the cylindrical body portion on the tail side. The semiconductor ingot is reversed in the direction of the axis and the head portion of the semiconductor ingot is cut off and a wafer sample is cut off from the cylindrical body portion on the head side.

Abstract: A prepreg and a composite prepared from the prepreg having high impact resistance, high interlayer toughness and high tensile strength are disclosed. The prepreg comprises the following elements [A], [B] and [C]:[A]: reinforcing fibers;[B]: a resin composition including a thermosetting resin and a thermoplastic resin which is soluble in said thermosetting resin, which resin composition being capable of forming a micro-phase separation structure; and[C]: fine particles which are insoluble in said element [B] and which do not contain an elastomer component;said element [C] being localized in a surface of said prepreg. The present invention also provides a composite prepared from this prepreg.

Abstract: The diameter, the orientation flat width/notch depth and the length of the block 10p are measured by the measuring devices 71a, 71b and 71c respectively and then the machining errors .DELTA.Dp, .DELTA.Wp and .DELTA.Lp in the measured values against the set values are calculated at the error calculation unit 833. Then .DELTA.Dp, .DELTA.Wp and .DELTA.Lp are stored in memory at the memory unit 834 in correspondence with the identification codes IDi and IDj of the grinding device 5i (i=1-N) and the cutting device 6j (j=1-M) that performed the machining. Then at the average value calculation unit 835, the average values of .DELTA.Dp and .DELTA.Wp for each of the grinding devices 51-5N and the average value of the .DELTA.Lp for each of the cutting devices 61-6M are calculated. The average values of .DELTA.Dp and .DELTA.Wp are supplied to the corresponding grinding device 5i as the diameter correction value and the width/depth correction value respectively and the average value of .DELTA.

Abstract: The present invention provides control of single crystal growth after the recovery from power failure when controlling crystal growth in an automatic mode. A source voltage is supplied to a controller 70 through a no-break power supply 62. At the time of recovery from power failure, the controller continues the automatic operation mode with the same control output as that stored when power failure is detected (84, 85) if the power failure time t is t .ltoreq.t.sub.1 (for example, 1 second), switches the control mode to the manual control mode with the same control output as that stored when the power failure is detected (86, 87) if t.sub.1 <t.ltoreq.t.sub.2 (for example, 5 seconds), stops the crystal growth operation and switches the control mode to the manual control mode (88, 89) if t.sub.2 <t.ltoreq.t.sub.3 (for example, 600 seconds), and separates the grown crystal from a melt 22 by upwardly moving the crystal and upwardly moves a crucible 16 (90) if t>t.sub.3.

Abstract: An improved serial access memory without erroneous reading where a faster reading operation is required. The serial access memory includes a disconnecting circuit connected between a serial bus line pair and a preamplifier. A data signal read out from a memory cell is provided to the preamplifier via the serial bus line pair. The disconnecting circuit electrically disconnects the serial bus line pair from the preamplifier after a predetermined time has elapsed since the preamplifier commences amplifying operation. An equalize circuit commences equalization of a next data signal right after the operation of the disconnecting circuit. Since the equalize timing of the serial bus line pair for reading the next data is made to commence earlier, proper reading operation can be realized even if the frequency of an externally applied serial out clock signal SOC is increased.

Abstract: A conical portion growth control method and an apparatus used in the method grow a conical portion 32B of a single crystal rod 32 by pulling the crystal rod from a melt 16 heated by a heater 14 in the Czochralski method, and aim to enhance reproducibility of the shape of the conical portion 32B and shorten the conical portion 32B. The control method has the steps of presetting a target value pattern 66 of the temperature of a concave portion 46 formed on a heat-insulating material 18 and a target value pattern 64 of the diameter change rate of a growing portion of the crystal rod, measuring the diameter of the crystal growing portion, calculating the change rate of the diameter, measuring the temperature of the concave portion, correcting the target temperature based on a difference between the calculated value and the target value of the diameter change rate, and controlling the amount of electricity supplied to the heater so that the measured temperature becomes equal to the corrected target temperature.

Abstract: A process for purifying crude 2,6-naphthalene dimethyl dicarboxylate (hereinunder referred to as 2,6-NDM) which comprises dissolving the crude 2,6-NDM into a C.sub.6 -C.sub.9 aromatic hydrocarbon, then contacting the solution of 2,6-NDM and the hydrocarbon with an hydrotalcite-like laminar crystalline compound and activated carbon, then carrying out thermal filtration of the solution, and then cooling the solution to separate 2,6-NDM crystal from the solution is disclosed.

Abstract: A method for controlling an oxygen concentration of a single crystal which is pulled up in a Czochralski-method type single crystal pulling apparatus having a hermetical chamber in which the single crystal is pulled up and an inert gas supply and exhaust system by means of which an inert gas is supplied to the hermetical chamber and exhausted therefrom; the method being characterized in that the pneumatic pressure in the hermetical chamber and the supply rate of the inert gas are controlled in accordance with a prepared control pattern with respect to the proportion of the length of the as-grown crystal to the aimed final length thereof or with respect to the passage of time.

Abstract: A semiconductor integrated circuit device for setting operational functions dependent on connection of a first bonding pad (20) to a power supply includes switching transistors (Q11, Q40, Q52, Q32) for resetting an input signal line (30) connected to the first bonding pad to a predetermined potential when there is no power supply potential applied to the first bonding pad immediately after turn-on of an operation power supply, at least one inverter (Q3, Q4, Q13, Q14; Q42, Q43; Q50, Q51) responsive to the turn-on of the power supply for the device, for setting and maintaining the potential on the input signal line, and switching transistors (Q12; Q32; Q41; Q52) to be turned on in response to output of the inverter, for cutting off a current path from the power supply through the bonding pad to the input signal line.

Abstract: Disclosed is a method of controlling the diameter of a single crystal produced by the Czochralski method. The diameter of a tapered portion of the single crystal is controlled by controlling the temperature of a melt in a crucible and the rotational speed of the crucible. The control range of the rotational speed of the crucible is made narrower as the diameter of the tapered portion approaches closer to that of a body portion, and the rotational speed is made constant while the body portion is grown.

Abstract: A melt-surface initial position adjusting apparatus which is suitable for use in a monocrystal growing system employing the Czochralski method to adjust the vertical position of the melt surface before the growing of a monocrystal. The apparatus can ensure a highly precise measurement of a crystal-diameter measuring device, thereby enabling a reduction in the costs of producing a monocrystal bar. Before the growing of a crystal, the vertical position (H) of the surface (16A) of a melt within a crucible is measured. The crucible is moved vertically on the basis of the measured value in such a manner as to maintain the distance (L) between the melt surface (16A) and an image sensor (28) for measuring the crystal diameter at a predetermined value.

Abstract: An apparatus for measuring the diameter of a crystal in which an optical sensor scans along a sensing line which crosses at one point a luminous ring formed at the interface between a crystalline rod and a melt; the picture element position corresponding to a maximum luminance is discriminated when the optical sensor scans; the mean value of the picture element position is calculated over at least one revolution of the crystalline rod; and the diameter D of the crystalline rod at a portion thereof interfacing with the melt is calculated from the mean value and the level of the melt. Similarly, the minimum crystal diameter can be calculated by obtaining the picture element position corresponding to the minimum crystal diameter instead of obtaining the mean of the picture element position.