Abstract: A mesa portion is formed on a substrate. An insulating film including an organic layer is disposed on the mesa portion. A conductor film is disposed on the insulating film. A cavity provided in the organic layer has side surfaces extending in a first direction. A shorter distance out of distances in a second direction perpendicular to the first direction from the mesa portion to the side surfaces of the cavity in plan view is defined as a first distance. A shorter distance out of distances in the first direction from the mesa portion to side surfaces of the cavity in plan view is defined as a second distance. A height of a first step of the mesa portion is defined as a first height. At least one of the first distance and the second distance is greater than or equal to the first height.

Abstract: A semiconductor device has a semiconductor substrate, at least one first transistor that has a mesa structure including one or more semiconductor layers, a first bump that overlaps the first transistor and extends in a first direction, and a second bump, in which the mesa structure has a first end portion on one end side in a second direction and a second end portion on the other end side in the second direction. The opening has a first opening end portion and a second opening end portion that are adjacent in the second direction. In plan view, the first opening end portion is closer to the second bump than the second opening end portion and the first end portion and the second end portion of the mesa structure are disposed between the first opening end portion and the second opening end portion.

Abstract: An aluminum alloy brazing sheet having a core material, a brazing filler material provided on one surface of the core material, and an intermediate material provided between the core material and the brazing filler material. The core material contains, in mass%, Mn: 0.20% to 2.00%, Si: 0.20% to 1.50%, Cu: 0.20% to 1.50%, and Mg: 0.10% to 0.90%, with the remainder being Al and unavoidable impurities. The intermediate material contains, in mass%, Zn: 0.50% to 8.00%, and Mg: 0.10% to 0.90%, with the remainder being Al and unavoidable impurities. The brazing filler material contains, in mass%, Si: 5.00% to 15.00%, Mg: 0.10% to 0.90%, Bi: 0.10% to 0.50%, and Cu: 0.05% to 0.50%, with the remainder being Al and unavoidable impurities. The aluminum alloy brazing sheet satisfies the formula 10.0?[Zn]/[Cu]?40.0.

Abstract: An aluminum alloy brazing sheet including a core material and a brazing material provided on at least one surface of the core material. The brazing material includes 5.0-9.0 mass % Si, 0.10-0.90 mass % Mg, and 0.05-0.60 mass % Bi, and further includes at least one of 0.80 mass % or less Mn and 0.60 mass % or less Ti, with the remainder being Al and inevitable impurities.

Abstract: Provided is an aluminum alloy fin stock for a heat exchanger which is free from brazing defects due to fin deformation during brazing and is excellent in strength, electric conductivity, corrosion resistance, and brazability, and a heat exchanger. An aluminum alloy fin stock for a heat exchanger is made of an aluminum alloy having a composition including, by mass %, Mn: 1.2% to 2.0%, Si: 0.5% to 1.3%, Cu: 0.001% to less than 0.05%, Fe: 0.1% to 0.5%, Zn: 0.5% to 2.5%, and a balance consisting of Al and inevitable impurities, in which, at a room temperature after brazing heating, the aluminum alloy fin stock has a tensile strength of 140 MPa or more, a 0.2% proof stress of 50 MPa or more, a electric conductivity of 42% IACS or more, an electric potential of ?800 mV or more and ?710 mV or less, and a corrosion weight loss of 120 mg/dm2 or less after 16 weeks in a neutral salt spray test.