Abstract: An injection blow molding system includes an injection molding station 22, a first delivery section 24, a cooling station 26, a heating station 30, a second delivery section 32 and a plurality of blow molding stations 34. The injection molding station 22 is designed to simultaneously injection mold M rows of N preforms 36 arranged in a second direction B perpendicular to a first direction A in which the preforms 36 are carried. The first delivery section 24 is designed to remove the M rows of preforms 36 injection molded by the injection molding station 22 through a removing mechanism 102 in their upright state while decreasing the pitch in the rows. The preforms 36 are inverted with the column pitch being changed by an inverting mechanism 104 before they are delivered to the cooling station in their inverted state. The cooling and heating stations 26, 30 are designed to cool and heat one row of N preforms 36 while parallel carrying them along a first carrying chain 200.

Abstract: A ferroelectric thin-film device comprises: a single crystal substrate; a conductive thin film formed on the single crystal substrate; and an oriented ferroelectric oxide thin film having a perovskite structure formed on the conductive thin film. The oriented ferroelectric thin film comprises a first layer having a composition changing from the interface with the conductive thin film in the thickness direction and a second layer having a constant composition formed on the first layer. The composition of the first layer and the composition of the second layer are substantially the same at the boundary between the first layer and the second layer.

Abstract: A protective circuit for protecting a circuit from a destructive voltage or current, comprising a MIS transistor, and at least one resistor connected in series with the MIS transistor for limiting current flow through the MIS transistor, wherein a resistance value R of the at least one resistor connected in series with the MIS transistor satisfies the relation R>(A-B)/C, wherein A is a surge voltage against which protection is provided, B is a hold voltage at a breakdown of the MIS transistor, and C is a maximum allowable current of the MIS transistor. The at least one resistor is connected in series with a source of the MIS transistor, a drain of the MIS transistor, or both the source and the drain of the MIS transistor, and the resistance value of the resistance is preferably smallest value that satisfies the relation R>(A -B)/C.

Abstract: To improve operation reliability of a charge and discharge control circuit and a chargeable power supply unit using it, and to improve the life of secondary cell. In the charge and discharge control circuit of the chargeable power supply unit, the circuit surely keeps control operation during voltage of the cell falls down because of discharge current and, over-current state and over-discharge state occur at the same time.

Abstract: By using a dual ion-beam sputtering apparatus, an aluminum thin-film is formed on a glass substrate made of an amorphous material. While radiating an ion beam for assisting the film formation from an ion source onto the glass substrate, the aluminum thin-film is formed by depositing the sputtering ions which are generated by radiating an ion beam onto an aluminum target.

Abstract: A heat-resistant container molding apparatus and method which are compact and inexpensive and can reliably increase the crystallinity, reduce the residual stress in a container filled with a hot content such as thermally sterilized fruit juice, and prevent a thermal deformation with improved container stability at a raised temperature. The apparatus has a receiving and removing unit for receiving primary moldings obtained by blow-molding preforms and for removing final products, a heat treatment section for heating the primary moldings by bringing the primary moldings into contact with the inner wall of a heat treatment mold while pressurizing the interior of the primary moldings within the heat treatment mold, a final molding section for blow molding intermittent moldings into final products within a final blow mold, and a rotary plate, neck support fixing plate and neck support member for conveying the moldings through the receiving and removing unit, heat treatment section and final molding section.

Abstract: Speech recognition is achieved using a normalized cumulative distance. A normalized Dynamic Programming (DP) value is calculated by dividing a cumulative path distance by an optimal integral path length. The path length is calculated iteratively by adding 2 if the warping path is diagonal or by adding 3 if the warping path is horizontal or vertical. Distance may be calculated by measuring a difference between input power and average power. The power difference is weighted by a coefficient (.lambda.) between 0 and 1. A Mahalanobis distance is then weighted by (1-.lambda.) and added to the weighted power difference.

Abstract: The speech processing apparatus and method includes a microphone, an analyzer, a selector, and a memory. The microphone converts input speech into an electrical signal representing speech data. The analyzer converts the speech data into non-linear frequency converted speech data in accordance with a non-linear frequency conversion. The selector selects a coefficient of the non-linear frequency conversion suitable for each of the phonemes or frames of the speech. The memory stores the speech data.

Abstract: A voice recognizing method apparatus in which an input voice is recognized by obtaining a similar pattern by comparing the input voice and voice standard patterns. Voice standard patterns are stored into a memory. A voice is inputted. Voice duration lengths and distances are calculated by performing matching processes between the input voice and the standard patterns. The distance is corrected in accordance with the voice duration length so that the voice duration length having the best matching result is used as a reference, or such that the distance is small as the voice duration length is long. A recognition result is determined in accordance with the corrected distance. The matching is executed by a word spotting method. The input voice to be matched and the voice standard patterns are expressed by voice characteristic parameters.

Abstract: A voice output device includes a processor for setting a time limit for waiting for the performing of a key input operation. The device also includes a timer for measuring a waiting time for the performing of a key input operation to detect the lapse of the time limit. The device further includes voice processing circuitry for outputting voice instructions to the operator when the lapse of the time limit is detected by the timer.

Abstract: An electrode forming method for a surface acoustic wave device is adapted to form a film of an electrode material on a piezoelectric substrate to be crystallographically oriented in a constant direction while carrying out ion assistance at prescribed ion energy, in a film formation process employing a film forming method such as evaporation, sputtering, IBS (ion beam sputtering), CVD (chemical vapor deposition), plasma CVD, MBE (molecular beam epitaxy), ICB (ionized cluster beam) or laser ablation.

Abstract: An apparatus and method for recognizing speech includes a memory for storing data representing a reference pattern composed of the combination of a word reference pattern and a silence pattern, and a calculator for calculating the differences between data representing the reference pattern and data representing input speech. The use of such a silence pattern in the reference pattern permits a word such as "other" to be distinguished from the word "mother".

Abstract: A method and apparatus for reading out a feature parameter and a driver sound source stored in a VCV (vowel-consonant-vowel) speech segment file, sequentially connecting the readout parameter and the readout sound source information in accordance with a predetermined rule, and supplying connected data to a speech synthesizer, thereby generating a speech output, includes a memory for storing the average power of each vowel, and a power controller for controlling the apparatus to normalize a VCV speech segment so that powers at both ends of each VCV segment coincide with the average power of each vowel.

Abstract: A method for encoding syllables of a language, particularly the Japanese language, and for facilitating the extraction of sound codes from the input syllables, for voice recognition or voice synthesis includes the step of providing a syllable classifying table, in which each syllable is represented by an upper byte code indicating the consonant part of the syllable and a lower byte code indicating the non-consonant part of the syllable. The consonants constitute a first category of data classified by phonetic features, while the non-consonants constitute a second category of data classified by phonetic features, so that the extraction of consonant or non-consonant sounds can be made by a search in only the first or the second categories.

Abstract: A voice processing apparatus capable of varying the speed of speech, in which a voice of a predetermined duration is represented by feature parameters and propriety information indicating whether a change in the speech speed is permitted or not. During voice synthesis, the speech speed is varied by skipping or repeating only the feature parameters for which the variation in speech speed is permitted by the associated propriety information.

Abstract: Interdigital transducers (3, 4) and reflectors (5, 6) are formed on a piezoelectric substrate (2) by an aluminum film. The aluminum film is crystallographically oriented in a constant direction, whereby stressmigration of the aluminum film is suppressed.

Abstract: Interdigital transducers and reflectors are formed on a piezoelectric substrate from an aluminum film. The aluminum film is formed by electron beam deposition at a film forming rate which is controlled to be at least 20 .ANG. per second. The aluminum film formed in this way is crystallographically oriented in a constant direction, whereby stressmigration of the aluminum film is suppressed.

Abstract: A surface accoustic wave device includes a substrate which is made up of single-crystalline dielectric member and a piezoelectric thin film epitaxially grown thereon. An aluminum electrode defining an interdigital electrode is formed along the interface between the dielectric member and the piezoelectric thin film. This aluminum electrode is formed of an aluminum film which is crystallographically oriented in a constant direction, whereby stressmigration of the aluminum electrode is suppressed, while enabling epitaxial growth of the piezoelectric thin film over the entire surface insert.

Abstract: Horizontal synchronizing signals included in a video signal are inputted to a PLL circuit. A counter as a divider in the PLL circuit outputs signals which are synchronized with the horizontal synchronizing signals. A gate pulse generator counts the output pulses of counter and produces a control signal for controlling a phase comparator as one of elements of the PLL circuit. The operation of phase comparator is stopped in vertical intervals in accordance with the control signal so that the phase comparator is not affected by signals which are included in the video signal and are not synchronized with the horizontal synchronizing signals. Thus, the PLL circuit produces pulses which are synchronized with the horizontal synchronizing signals in a wide frequency range.

Abstract: A voice subtractor/recognizer which prevents interference from a voice output device by inputting via one input device both a sound to be recognized and any sound being output by the output device, and inputting at a second input device a signal representing the output of the output device. The latter signal is analyzed, and the result is used to inversely filter a signal representing the sounds input via the first-mentioned input device.