Abstract: A duplicating photosensitive material film is placed into close contact with a thin flexible ND glass or an ND glass coated with a cushioning layer through an optical contacting liquid containing a surface active agent. A spacer is interposed between a hologram original plate and the duplication photosensitive material, and the space defined by the spacer is filled with an optical contacting liquid, the spacer thereby regulating the thickness of the optical contacting liquid layer. In addition, a cushioning layer is provided on the inner side of an AR coated ND glass or on the upper side of the photosensitive material film, and another cushioning layer is provided on the side of an original plate protecting glass of the hologram original plate which is closer to the optical contacting liquid or on the lower side of the photosensitive material film. With this arrangement, even if dust enters, it can be effectively held inside the cushioning layers.

Abstract: Herein is disclosed a method of improving or producing an oxide superconductor. An oxide superconductor or starting material of oxide superconductor as an object material is irradiated with active oxygen species. The irradiation process is carried out while keeping the object material at a temperature at which the object material is effectively oxidized with the active oxygen species. The active oxygen species are formed on the inside or in the peripheral portion of a nonequilibrium or equilibrium, high-temperature plasma.

Abstract: Introducing a raw material organic substance onto a substrate surface, causing polymerization of the raw material organic substance on the substrate surface and causing deposition of the resultant polymer on the substrate surface, previously forming a pattern on the substrate surface with at least two kinds of substances and/or through surface modification, and selectively forming an organic thin film only on this pattern or only on a portion other than the pattern. By this procedure, it is possible to directly deposit and form a thin pattern of an organic thin film, such as a film having a thickness up to 10 .mu.m.

Abstract: In an apparatus for forming an aluminum thin film, or an aluminum alloy thin film useful to an interconnecting material of an electronic device, there are provided: a processing chamber capable of keeping a vacuum condition therein; a substrate holder mounted within said processing chamber, for holding a substrate and performing a temperature adjustment; a first temperature adjusting mechanism for performing the temperature adjustment of said substrate via said substrate holder whereby a part of element consisting said predetermined gas is deposited on the surface of said substrate; a gas conducting mechanism for conducting a predetermined gas into said processing chamber; an exhausting mechanism for exhausting an interior of said processing chamber; a distributing plate provided within said processing chamber, for uniformly supplying said predetermined gas to a surface of said substrate; and a second temperature adjusting mechanism for adjusting the temperature of said distributing plate.

Abstract: In an apparatus for forming an aluminum thin film, or an aluminum alloy thin film useful to an interconnecting material of an electronic device, there are provided:a processing chamber capable of keeping a vacuum condition therein;a substrate holder mounted within said processing chamber, for holding a substrate and performing a temperature adjustment;a first temperature adjusting mechanism for performing the temperature adjustment of said substrate via said substrate holder;whereby a part of element consisting said predetermined gas is deposited on the surface of said substrate;a gas conducting mechanism for conducting a predetermined gas into said processing chamber;an exhausting mechanism for exhausting an interior of said processing chamber;a distributing plate provided within said processing chamber, for uniformly supplying said predetermined gas to a surface of said substrate; anda second temperature adjusting mechanism for adjusting the temperature of said distributing plate.

Abstract: For processing an object by the use of gas plasma generated in a predetermined gas, such as nitrogen, in cooperation of an electromagnetic wave with a static, an alternating, and a rotating magnetic field, an apparatus comprises a magnet around a first part of a reaction vessel to produce the magnetic field substantially parallel to an interface at which the first part is contiguous with a second part of the reaction vessel so as to confine the gas plasma within the first part. The interface may be open ultraviolet rays and charged or neutral particles produced by the gas plasma. Alternatively, an optical window may be disposed at the interface to use only the ultraviolet rays with the object held within the second part.

Abstract: In a surface processing apparatus, the LTE (Local Thermal Equilibrium) plasma is produced, instead of the glow discharge, in the discharge chamber. Then the LTE plasma is conducted into the reaction chamber. The surface of the substrate positioned in the reaction chamber is exposed to at least one of the radiation and the active species generated from the LTE plasma for performing the surface processing.