Abstract: In an apparatus for forming an aluminum thin film, or an aluminum alloy thin film useful to an interconnecting material of an electronic device, there are provided: a processing chamber capable of keeping a vacuum condition therein; a substrate holder mounted within said processing chamber, for holding a substrate and performing a temperature adjustment; a first temperature adjusting mechanism for performing the temperature adjustment of said substrate via said substrate holder whereby a part of element consisting said predetermined gas is deposited on the surface of said substrate; a gas conducting mechanism for conducting a predetermined gas into said processing chamber; an exhausting mechanism for exhausting an interior of said processing chamber; a distributing plate provided within said processing chamber, for uniformly supplying said predetermined gas to a surface of said substrate; and a second temperature adjusting mechanism for adjusting the temperature of said distributing plate.

Abstract: In an apparatus for forming an aluminum thin film, or an aluminum alloy thin film useful to an interconnecting material of an electronic device, there are provided:a processing chamber capable of keeping a vacuum condition therein;a substrate holder mounted within said processing chamber, for holding a substrate and performing a temperature adjustment;a first temperature adjusting mechanism for performing the temperature adjustment of said substrate via said substrate holder;whereby a part of element consisting said predetermined gas is deposited on the surface of said substrate;a gas conducting mechanism for conducting a predetermined gas into said processing chamber;an exhausting mechanism for exhausting an interior of said processing chamber;a distributing plate provided within said processing chamber, for uniformly supplying said predetermined gas to a surface of said substrate; anda second temperature adjusting mechanism for adjusting the temperature of said distributing plate.

Abstract: For processing an object by the use of gas plasma generated in a predetermined gas, such as nitrogen, in cooperation of an electromagnetic wave with a static, an alternating, and a rotating magnetic field, an apparatus comprises a magnet around a first part of a reaction vessel to produce the magnetic field substantially parallel to an interface at which the first part is contiguous with a second part of the reaction vessel so as to confine the gas plasma within the first part. The interface may be open ultraviolet rays and charged or neutral particles produced by the gas plasma. Alternatively, an optical window may be disposed at the interface to use only the ultraviolet rays with the object held within the second part.

Abstract: In a surface processing apparatus, the LTE (Local Thermal Equilibrium) plasma is produced, instead of the glow discharge, in the discharge chamber. Then the LTE plasma is conducted into the reaction chamber. The surface of the substrate positioned in the reaction chamber is exposed to at least one of the radiation and the active species generated from the LTE plasma for performing the surface processing.