Patents by Inventor Atsushi Tajika

Atsushi Tajika has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Phase shift mask blank, phase shift mask, and method of manufacture
    Patent number: 7179567
    Abstract: In a phase shift mask blank comprising a transparent substrate and a phase shift film thereon, after the phase shift film is formed on the substrate, it is surface treated with ozone water having an ozone concentration of at least 1 ppm. The resulting phase shift film is of quality in that it experiences minimized changes of phase difference and transmittance upon immersion in chemical liquid during subsequent mask cleaning step or the like.
    Type: Grant
    Filed: June 27, 2003
    Date of Patent: February 20, 2007
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Yukio Inazuki, Masayuki Nakatsu, Tsuneo Numanami, Atsushi Tajika, Hideo Kaneko, Satoshi Okazaki
  • Phase shift mask blank, phase shift mask, and method of manufacture
    Publication number: 20030235767
    Abstract: In a phase shift mask blank comprising a transparent substrate and a phase shift film thereon, after the phase shift film is formed on the substrate, it is surface treated with ozone water having an ozone concentration of at least 1 ppm. The resulting phase shift film is of quality in that it experiences minimized changes of phase difference and transmittance upon immersion in chemical liquid during subsequent mask cleaning step or the like.
    Type: Application
    Filed: June 27, 2003
    Publication date: December 25, 2003
    Applicant: Shin-Etsu Chemical Co., Ltd.
    Inventors: Yukio Inazuki, Masayuki Nakatsu, Tsuneo Numanami, Atsushi Tajika, Hideo Kaneko, Satoshi Okazaki
  • Phase shift mask blank, phase shift mask, and method of manufacture
    Publication number: 20030025216
    Abstract: In a phase shift mask blank comprising a transparent substrate and a phase shift film thereon, after the phase shift film is formed on the substrate, it is surface treated with ozone water having an ozone concentration of at least 1 ppm. The resulting phase shift film is of quality in that it experiences minimized changes of phase difference and transmittance upon immersion in chemical liquid during subsequent mask cleaning step or the like.
    Type: Application
    Filed: August 6, 2002
    Publication date: February 6, 2003
    Inventors: Yukio Inazuki, Masayuki Nakatsu, Tsuneo Numanami, Atsushi Tajika, Hideo Kaneko, Satoshi Okazaki