Abstract: A method of fabricating an acoustic wave resonator includes forming a dielectric layer on an upper surface of a substrate, forming a lower electrode on an upper surface of the dielectric layer, forming a layer of piezoelectric material on an upper surface of the lower electrode, forming a dielectric material layer via in the dielectric layer subsequent to forming the lower electrode and the layer of piezoelectric material, and forming a conductive through substrate via passing through the substrate and the dielectric material layer via and contacting a lower surface of the lower electrode.

Abstract: An electronic device package comprises an electrical device disposed on a base substrate, a conductive column in electrical communication with the electrical device and having a first end bonded to the base substrate, a cap substrate disposed over the electrical device and bonded to a second end of the conductive column, a layer of organic dielectric buffer coat material on the lower surface of the base substrate, a through substrate via in electrical communication with the conductive column and passing through the base substrate and the layer of organic dielectric buffer coat material, a redistribution layer disposed on the layer of organic dielectric buffer coat material, and a contact pad formed on the redistribution layer and in electrical communication with the through substrate via through the redistribution layer, the contact pad being horizontally displaced from a position directly below the through substrate via.

Abstract: Aspects of this disclosure relate to methods of manufacturing bulk acoustic wave components. Such methods include plasma dicing to singulate individual bulk acoustic wave components. A buffer layer can be formed over a substrate of bulk acoustic wave components such that streets are exposed.

Abstract: A multi-layer piezoelectric substrate silicon package comprises a bottom filter including a cap wafer of the bottom filter, and a device wafer of the bottom filter, the cap wafer of the bottom filter and the device wafer of the bottom filter each having a first through silicon via configured to provide an electrical path from a first bottom terminal of the device wafer of the bottom filter to a first top terminal of the cap wafer of the bottom filter.

Abstract: Aspects of this disclosure relate to methods of manufacturing bulk acoustic wave components. Such methods include plasma dicing to singulate individual bulk acoustic wave components. A buffer layer can be formed over a substrate of bulk acoustic wave components such that streets are exposed. The bulk acoustic wave components can be plasma diced along the exposed streets to thereby singulate the bulk acoustic wave components.

Abstract: A combined acoustic wave device package is provided comprising: a first substrate having a bulk acoustic wave (BAW) resonator formed thereon; a second substrate having a surface acoustic wave (SAW) resonator formed thereon; and at least one bonding element connecting the first substrate and second substrate. A method for forming such a combined acoustic wave device package is also provided. A radio frequency (RF) device comprising such a combined acoustic wave device package, and a wireless device comprising an antenna and a such a combined acoustic wave device package are also provided.

Abstract: A stacked filter package is disclosed. The stacked filter package can include a first acoustic wave device having a first device type. The first acoustic wave device includes a first substrate having a first coefficient of thermal expansion. The stacked filter package can include a second acoustic wave device having a second device type different from the first device type. The second acoustic wave device includes a second substrate having a second coefficient of thermal expansion. The second coefficient of thermal expansion is at least double the first coefficient of thermal expansion. The stacked filter package can include a bonding structure between the first and second substrates. The bonding structure couples the first and second substrate.

Abstract: An electronic device package comprises an electrical device disposed on a base substrate, a conductive column in electrical communication with the electrical device and having a first end bonded to the base substrate, a cap substrate disposed over the electrical device and bonded to a second end of the conductive column, a layer of dielectric material disposed on the lower surface of the base substrate, a through substrate via in electrical communication with the conductive column and passing through the base substrate and the layer of dielectric material, a redistribution layer disposed on the layer of dielectric material, and a contact pad formed on the redistribution layer and in electrical communication with the through substrate via through the redistribution layer, the contact pad being horizontally displaced from a position directly below the through substrate via.

Abstract: A method of marking information on a substrate for use in a semiconductor component is provided. The method comprises providing a substrate for use in a semiconductor component, providing a metal layer on a surface of the substrate, and providing a marking within the metal layer. A method of making a die, a radio-frequency module and a wireless mobile device; as well as a substrate, a die, a radio-frequency module and a wireless mobile device is also provided.

Abstract: Aspects of this disclosure relate to methods of manufacturing bulk acoustic wave components. Such methods include plasma dicing to singulate individual bulk acoustic wave components. A buffer layer can be formed over a substrate of bulk acoustic wave components such that streets are exposed.

Abstract: A packaged acoustic wave component is disclosed. The packaged acoustic wave component can include a first acoustic wave resonator that includes a first interdigital transducer electrode that is positioned over a first piezoelectric layer. The packaged acoustic wave component can also include a second acoustic wave resonator including a second interdigital transducer electrode positioned over a second piezoelectric layer. The second piezoelectric layer is bonded to the first piezoelectric layer. The packaged acoustic wave component can further include a stopper structure that is positioned over the first piezoelectric layer. The first stopper structure is positioned above a via and extends through the first piezoelectric layer. The stopper structure is in electrical communication with the first interdigital transducer electrode and includes a material which reflects at least fifty percent of light having a wavelength of 355 nanometers.

Abstract: An electronic component comprises a substrate including a main surface on which a functional unit is formed and a cap layer defining a cavity enclosing and covering the functional unit. The cap layer is provided with holes communicating an inside of the cavity with an outside of the cavity. A resin layer covers the cap layer and the main surface and includes one or more bores and a solder layer having a thickness less than a thickness of the resin layer disposed within the one or more bores.

Abstract: Aspects of this disclosure relate to methods of manufacturing bulk acoustic wave components. Such methods include plasma dicing to singulate individual bulk acoustic wave components. A buffer layer can be formed over a substrate of bulk acoustic wave components such that streets are exposed.

Abstract: A packaged acoustic wave component has an acoustic wave device mounted on a device substrate and a cap substrate spaced above the device substrate. The packaged acoustic wave component also has a shield structure including a metal plate disposed on a bottom surface of the cap substrate that faces the device substrate, the metal plate being spaced above the acoustic wave device, and a peripheral metal wall attached to the metal plate that extends to the device substrate. The shield structure encloses and electrically shields the acoustic wave device.

Abstract: A method of manufacturing a packaged acoustic wave component includes forming or providing a cap substrate. The method also includes forming a metal shield plate on a surface of the cap substrate. The cap substrate is attached to a device substrate that has an acoustic wave device on a surface thereof such that the metal shield plate is spaced from and faces the acoustic wave device and so that a peripheral metal wall extends between the device substrate and the metal plate. The metal shield plate and peripheral metal wall enclose and electrically shield the acoustic wave device.

Abstract: Aspects of this disclosure relate to bulk acoustic wave components. A bulk acoustic wave component can include a substrate, at least one bulk acoustic wave resonator on the substrate, and a cap enclosing the at least one bulk acoustic wave resonator. The cap can include a sidewall spaced apart from an edge of the substrate. The sidewall can be 5 microns or less from the edge of the substrate.

Abstract: An electronic device includes a first substrate and a second substrate. A side wall joins the first substrate to the second substrate. The side wall includes a first alloy layer of a first metal and a second metal bonded directly to an upper surface of the first substrate and a second alloy layer of the first metal and a third metal disposed on top of the first alloy layer and bonded directly to a lower surface of the second substrate, the second metal and the third metal being different from each other and from the first metal. An electronic circuit is disposed on the lower surface of the second substrate within a cavity defined by the lower surface of the first substrate, the upper surface of the second substrate, and the side wall.

Abstract: A packaged acoustic wave component is disclosed. The packaged acoustic wave component can include a first acoustic wave resonator that includes a first interdigital transducer electrode that is positioned over a first piezoelectric layer. The packaged acoustic wave component can also include a second acoustic wave resonator including a second interdigital transducer electrode positioned over a second piezoelectric layer. The second piezoelectric layer is bonded to the first piezoelectric layer. The packaged acoustic wave component can further include a stopper structure that is positioned over the first piezoelectric layer. The first stopper structure is positioned above a via and extends through the first piezoelectric layer. The stopper structure is in electrical communication with the first interdigital transducer electrode and includes a material which reflects at least fifty percent of light having a wavelength of 355 nanometers.

Abstract: A method of manufacturing an electronic device includes preparing an electronic component including a first substrate on a main surface of which a functional unit and a first resin layer are formed. The first resin layer has a first surface facing the main surface of the first substrate, a second surface opposed to the first surface, a cavity on the first surface enclosing the functional unit, and a portion defining a wall of the cavity. The first resin layer defines a recess provided with a solder layer on the second surface. The method further includes preparing a second substrate having an electrode pad formed on a main surface, aligning the electronic component with the second substrate to layer the solder layer and the electrode pad in contact with the solder layer, and forming the electronic component and the second substrate into the electronic device.

Abstract: A packaged acoustic wave component is disclosed. The packaged acoustic wave component can include a first acoustic wave resonator that includes a first interdigital transducer electrode that is positioned over a first piezoelectric layer. The packaged acoustic wave component can also include a second acoustic wave resonator including a second interdigital transducer electrode positioned over a second piezoelectric layer. The second piezoelectric layer is bonded to the first piezoelectric layer. The packaged acoustic wave component can further include a stopper structure that is positioned over the first piezoelectric layer. The first stopper structure is positioned above a via and extends through the first piezoelectric layer. The stopper structure is in electrical communication with the first interdigital transducer electrode and includes a material which reflects at least fifty percent of light having a wavelength of 355 nanometers.