Abstract: A memory block area in a semiconductor memory includes program segments. Each program segment includes a group of memory cells arranged at positions where word lines and bit lines intersect and connected to a common source line. The word lines are shared by the program segments. At program operation time source line switches are used for supplying first voltage to a source line in a program segment, of the program segments, including a memory cell to be programmed and supplying second voltage to a source line in a program segment, of the program segments, not including the memory cell to be programmed.

Abstract: An electronic device includes a substrate; and a plurality of thin-film elements formed on the substrate. Further, the thin-film element includes a thin-film section having a function selected from a group including piezoelectric effect, inverse piezoelectric effect, charge storage, semiconductivity, and conductivity, and the plurality of thin-film elements includes the thin-film sections having two or more different functions.

Abstract: A method of fabricating an electromechanical transducer film includes applying a precursor solution on a support substrate, heating the substrate at a first temperature to form a ceramic thin-film in amorphous state, applying a sol-gel solution onto the ceramic thin-film, and heating the ceramic thin-film at a second temperature to form an electromechanical transducer thin-film in amorphous state. The method further includes heating the ceramic and transducer thin-films at a third temperature to thermally decompose an organic substance in the sol-gel solution and form a unitary thin-film, processing the unitary thin-film to form a patterned unitary thin-film, modifying an area on which the patterned film is not formed, discharging the sol-gel solution onto a surface of the patterned film by a liquid discharge head to apply the sol-gel solution to the surface of the patterned film, and heating the patterned film at a fourth temperature to crystallize the patterned film.

Abstract: A method of making a liquid discharge head which includes a nozzle to discharge liquid, a pressure chamber communicating with the nozzle, a pressure chamber substrate to form surfaces of the pressure chamber, and a piezoelectric actuator to apply pressure to liquid in the pressure chamber having a lower electrode, a ferroelectric film, and an upper electrode, includes a silicon wafer supplying process, a position adjustment process, a surface treatment process to reform a surface of the lower electrode, a liquid applying process to apply ferroelectric precursor on the lower electrode by an inkjet method, a heating process to heat the ferroelectric precursor film, and a cooling process. A series of processes from the position adjustment process to the cooling process is iterated to form a ferroelectric film having a predetermined thickness. The series of processes is performed with certain waiting times inserted between key processes.

Abstract: A precursor sol-gel solution is provided that has been subjected to a partial hydrolysis process and is used for forming an oxide dielectric film having a perovskite structure represented by the general formula ABO3. The precursor sol-gel solution is subjected to a stabilization process for controlling a viscosity change resulting from the partial hydrolysis process to be less than or equal to 50%, and water contained in the precursor sol-gel solution is controlled to be greater than or equal to 0.50 times and less than or equal to 10 times by molar ratio with respect to a B site atom contained in the precursor sol-gel solution.

Abstract: An optical information recording medium includes a substrate that has a recessed portion on a surface thereof, a recording layer, and a reflective layer. By combination of ranges of an optical density of the recording layer and a depth of the recessed portion of the substrate, degradation of reflectance is suppressed.

Abstract: An actuator includes a base member and an electro-mechanical transducer element including a first electrode, an electro-mechanical transducer film, and a second electrode. Further, the base member includes a thin wall part having a concave shape, the electro-mechanical transducer film is formed in a manner such that a film thickness of the electro-mechanical transducer film is gradually reduced from a center part of the electro-mechanical transducer film to both end parts of the electro-mechanical transducer film in at least one direction crossing a film thickness direction of the electro-mechanical transducer film.

Abstract: According to one embodiment, a protective relaying device includes a phase difference calculating unit configured to calculate a phase difference between a phase obtained by shifting a phase of first current data by 180°, and a phase of second current data, a setting unit configured to calculate a target value of elimination of a sampling synchronization error caused by a difference between a transmission delay time of up-transmission, and a transmission delay time of down-transmission on the basis of the phase difference, and to set the calculated target value, and a sampling synchronization control unit configured to carry out control of sampling synchronization such that a difference between a time TM and a time TF.

Abstract: Disclosed is a method of fabricating an electromechanical transducer film. The method includes treating a surface of a first electrode to be liquid-repellent, the first electrode being formed on one surface of a substrate, irradiating the surface of the first liquid-repellent electrode with an energy ray while moving an irradiation position in accordance with a shape of the electromechanical transducer film to be formed and a shape of an alignment mark to be formed, and forming the alignment mark by applying an application liquid to an area including a portion irradiated with the energy ray in accordance with the shape of the alignment mark in the irradiating step, the application liquid being applied by an inkjet method.

Abstract: A semiconductor memory device includes a memory block as a code storage memory area which has a large memory capacity and in which the number of bits to be written at once is large, and a memory block as a work memory area which has a small memory capacity and in which the number of bits to be written at once is small, in which in writing to the code storage memory area a first voltage is supplied to a source line of this memory block, and in writing to the work memory area a second voltage higher than the first voltage is supplied to a source line of this memory block.

Abstract: An optical information recording medium includes a substrate that has a recessed portion on a surface thereof, a recording layer, and a reflective layer. By combination of ranges of an optical density of the recording layer and a depth of the recessed portion of the substrate, degradation of reflectance is suppressed.

Abstract: An actuator includes a base member and an electro-mechanical transducer element including a first electrode, an electro-mechanical transducer film, and a second electrode. Further, the base member includes a thin wall part having a concave shape, the electro-mechanical transducer film is formed in a manner such that a film thickness of the electro-mechanical transducer film is gradually reduced from a center part of the electro-mechanical transducer film to both end parts of the electro-mechanical transducer film in at least one direction crossing a film thickness direction of the electro-mechanical transducer film.

Abstract: A thin film forming apparatus which automatically forms, on an electrode layer formed on a substrate, a functional thin film which is crystallized from a precursor layer is disclosed, including a water-repellant film forming unit which forms, on a region other than a region on which is to be formed the functional thin film on the electrode layer, a water-repellant film which includes a self-assembled monolayer; an inkjet coating unit which coats, on the region on which is to be formed the functional thin film on the electrode layer, the precursor layer by an inkjet method; and a controller which controls, to within a predetermined time, a time from forming the water-repellant film with the water-repellant film forming unit to coating the precursor layer with the inkjet coating unit.

Abstract: According to one embodiment, a protective relay performs the following steps. A/D converter 11 acquires an electric current of a power transmission line 4 via a CT 5. A computing part 12 performs various protection computations such as current differential computation using a current data measured at the end of itself and a current data measured at the opposite end. A transmitting and receiving circuit 13 transmits the current data of itself to the other protective relay 1 at the opposite end via a transmission path 3. A received level detection part 14 detects the received level of the transmission data that has been transmitted from the opposite end and received by the transmitting and receiving circuit 13.

Abstract: An electronic device includes a substrate; and a plurality of thin-film elements formed on the substrate. Further, the thin-film element includes a thin-film section having a function selected from a group including piezoelectric effect, inverse piezoelectric effect, charge storage, semiconductivity, and conductivity, and the plurality of thin-film elements includes the thin-film sections having two or more different functions.

Abstract: Disclosed is a method of manufacturing an electromechanical transducer layer on a surface of a substrate, including discharging a solution including a source material to form the electromechanical transducer layer from a nozzle of a nozzle plate to coat the solution on the surface of the substrate while applying voltage between the nozzle plate and the substrate to charge the nozzle plate at a first polarity and the substrate at a second polarity opposite to the first polarity such that a split droplet split from a main droplet which is coated on the surface of the substrate becomes charged at the second polarity and is attracted and collected by the nozzle plate; and applying a heat treatment to the substrate on which the solution is coated to crystallize the solution to form the electromechanical transducer layer.

Abstract: A coupled analysis simulation apparatus includes a coupled analysis processing unit configured to perform coupled analysis by performing electromagnetic field analysis and circuit analysis in coordination with each other, the electromagnetic field analysis being performed on a space including conductive layers to which an electronic circuit module is connected, the circuit analysis being performed on the electronic circuit module; a first generating unit configured to generate a virtual conductive part in a section or a region including connection parts connecting the electronic circuit module with the conductive layers; and a second generating unit configured to generate virtual connection parts that virtually connect the virtual conductive part with the conductive layers at positions where the connection parts are connected to the conductive layers.

Abstract: A transmission includes a controller being provided with a change-speed stage anticipator. The controller adopts a time, which one of the transmission's gear-mechanism selectors requires in shifting a current change-speed stage to another change-speed stage, as a pre-shift time for selecting the latter change-speed stage. The change-speed stage anticipator operates the one of the gear-mechanism selectors while adopting a temporary change-speed stage as a subsequent change-speed stage when the temporary change-speed stage, which is estimated from a state of vehicle after the pre-shift time, the state of vehicle being relevant to each element of an anticipated change-speed stage group that is made up of one or more of the change-speed stages that can be selected by the one of the gear-mechanism selectors being set on one of the transmission's input shafts that is disconnected from a power source, coincides with an anticipated change-speed stage that corresponds to the pre-shift time.

Abstract: A memory block area in a semiconductor memory includes program segments. Each program segment includes a group of memory cells arranged at positions where word lines and bit lines intersect and connected to a common source line. The word lines are shared by the program segments. At program operation time source line switches are used for supplying first voltage to a source line in a program segment, of the program segments, including a memory cell to be programmed and supplying second voltage to a source line in a program segment, of the program segments, not including the memory cell to be programmed.

Abstract: A semiconductor memory device includes a memory block as a code storage memory area which has a large memory capacity and in which the number of bits to be written at once is large, and a memory block as a work memory area which has a small memory capacity and in which the number of bits to be written at once is small, in which in writing to the code storage memory area a first voltage is supplied to a source line of this memory block, and in writing to the work memory area a second voltage higher than the first voltage is supplied to a source line of this memory block.