Abstract: There is disclosed an alignment method comprising the steps of irradiating an alignment light toward an alignment mark whose surface has a high reflectance, the alignment mark being coated by a resist film, and performing alignment on the basis of the resultant intensity of reflected light from the surface of the resist and reflected light from an interface between the resist and the mark portion. The resist comprises a chemical material having a light absorption characteristic in a wavelength band of the alignment light, and is irrespective of that of an exposure light used to expose the resist.