Abstract: Provided is a semiconductor device in which a leakage current is reduced, the semiconductor device which is particularly useful for power devices. A semiconductor device including at least: an n+-type semiconductor layer, which contains a crystalline oxide semiconductor as a major component; an n?-type semiconductor layer that is placed on the n+-type semiconductor layer, the n?-type semiconductor layer containing a crystalline oxide semiconductor as a major component; a high-resistance layer with at least a part thereof being embedded in the n?-type semiconductor layer, the high-resistance layer having a bottom surface located at a distance of less than 1.5 ?m from an upper surface of the n+-type semiconductor layer; and a Schottky electrode that forms a Schottky junction with the n?-type semiconductor layer, the Schottky electrode having an edge located on the high-resistance layer.

Abstract: Provided is a semiconductor device in which a leakage current is reduced, the semiconductor device which is particularly useful for power devices. A semiconductor device including at least: an n+-type semiconductor layer, which contains a crystalline oxide semiconductor as a major component; an n?-type semiconductor layer that is placed on the n+-type semiconductor layer, the n?-type semiconductor layer containing a crystalline oxide semiconductor as a major component; a high-resistance layer with at least a part thereof being embedded in the n?-type semiconductor layer, a depth d (?m) of the part embedded in the n?-type semiconductor layer satisfying d?1.4; and a Schottky electrode that forms a Schottky junction with the n?-type semiconductor layer, the Schottky electrode having an edge located on the high-resistance layer.