Abstract: A light detection device includes: a TFT having a semiconductor layer supported on a substrate, a source electrode, a drain electrode, and a gate electrode; a photodiode having a bottom electrode electrically connected to the drain electrode, a semiconductor laminate structure, and a top electrode; and an electrode made of the same conductive film as the bottom electrode and arranged on the semiconductor layer with an insulating layer interposed therebetween.

Abstract: The present invention has an object of improving the operation stability of a semiconductor device that detects radiations without decreasing the yield thereof. A semiconductor device includes an active matrix substrate (50) including a plurality of TFTs (10) and a plurality of pixel electrode (20); a photoelectric conversion substrate (62) located to face the active matrix substrate (50); an upper electrode (64) provided on a surface of the photoelectric conversion substrate (62) opposite to the active matrix substrate (50); and a plurality of connection electrodes (72) provided between the active matrix substrate (50) and the photoelectric conversion substrate(62), the plurality of connection electrodes (72) being formed of metal material.

Abstract: A photosensor substrate (10) includes a plurality of sensor units (1). The sensor units (1) each include a switching element (2), a lower electrode (3) connected to the switching element (2), and a photoelectric conversion element (4). The photosensor substrate (10) includes lines (G and D) connected to the switching elements of the plurality of sensor units and led out of a sensor area (SA), and terminal parts (TG and TD) connected to the lines (G and D) led out of the sensor area (SA). The terminal parts (TG and TD) each include a protective layer (4a) overlapped with the line (G or D) led out of the sensor area and containing a material for the photoelectric conversion element (4), and a terminal conductor (6) connected to the line (G or D) via an opening (CH1) provided in the protective layer (4a).

Abstract: The present invention has an object of improving the operation stability of a semiconductor device that detects radiations without decreasing the yield thereof. A semiconductor device includes an active matrix substrate (50) including a plurality of TFTs (10) and a plurality of pixel electrode (20); a photoelectric conversion substrate (62) located to face the active matrix substrate (50); an upper electrode (64) provided on a surface of the photoelectric conversion substrate (62) opposite to the active matrix substrate (50); and a plurality of connection electrodes (72) provided between the active matrix substrate (50) and the photoelectric conversion substrate(62), the plurality of connection electrodes (72) being formed of metal material.

Abstract: A light detection device includes: a TFT having a semiconductor layer supported on a substrate, a source electrode, a drain electrode, and a gate electrode; a photodiode having a bottom electrode electrically connected to the drain electrode, a semiconductor laminate structure, and a top electrode; and an electrode made of the same conductive film as the bottom electrode and arranged on the semiconductor layer with an insulating layer interposed therebetween.

Abstract: A transparent conductive substrate (1) in which a transparent conductive film (12) is placed on a light-transmissive base plate (11) is brought into a reaction chamber of a plasma apparatus without being rinsed (Step (a)) and the transparent conductive film (12) is treated with plasma using a CH4 gas and an H2 gas (Step (b)). After Step (b), semiconductor devices are deposited on the transparent conductive film (12) in series (Steps (c) and (d)) and a semiconductor device (10) is manufactured (Step (e)).

Abstract: A method of manufacturing a silicon-containing film includes a first step of drying cleaning a chamber with a fluorine-containing gas, a second step of loading a substrate into the chamber, a third step of purging the chamber with a silane-based gas, with the substrate being provided in the chamber, and a fourth step of forming the silicon-containing film on the substrate after the third step.

Abstract: A method for manufacturing a silicon-containing film includes the steps of loading a substrate, depositing a silicon-containing unloading the substrate, dry cleaning, reducing fluoride and exhausting gas. In the step of reducing fluoride, a reducing gas is supplied into a chamber in such a way that a partial pressure of CF4 gas in the chamber is A×(2.0×10?4) Pa or less at the end of the step of exhausting gas.

Abstract: Silicon dots are formed at a relatively low temperature, while suppressing occurrence of defects and clustering of silicon dots and damages caused by plasma, with high controllability of particle diameter and high reproducibility between substrates. Moreover, silicon dots and insulating film are formed at a relatively low temperature, with high controllability of the particle diameter of the silicon dots, high controllability of the thickness of the insulating film and high reproducibility between substrates.

Abstract: There are provided a method and an apparatus which form silicon dots having substantially uniform particle diameters and exhibiting a substantially uniform density distribution directly on a substrate at a low temperature. A hydrogen gas (or a hydrogen gas and a silane-containing gas) is supplied into a vacuum chamber (1) provided with a silicon sputter target (e.g., target 30), or the hydrogen gas and the silane-containing gas are supplied into the chamber (1) without arranging the silicon sputter target therein, a high-frequency power is applied to the gas(es) so that plasma is generated such that a ratio (Si(288 nm)/H?) between an emission intensity Si(288 nm) of silicon atoms at a wavelength of 288 nm and an emission intensity H? of hydrogen atoms at a wavelength of 484 nm in plasma emission is 10.0 or lower, and preferably 3.0 or lower, or 0.

Abstract: A silicon object formation target substrate is arranged in a first chamber, a silicon sputter target is arranged in a second chamber communicated with the first chamber, plasma for chemical sputtering is formed from a hydrogen gas in the second chamber, chemical sputtering is effected on the silicon sputter target with the plasma thus formed, producing particles contributing to formation of silicon object, whereby a silicon object is formed, on the substrate, from the particles moved from the second chamber to the first chamber.

Abstract: A method for forming silicon dots which can form silicon dots at a relatively low temperature, with good controllability of the particle diameter of silicon dots depending on the particle diameter of silicon dots to be formed. The method for forming silicon dots comprises producing inductively coupled plasma from a gas for forming silicon dots provided within the plasma producing chamber by applying a high-frequency power to an antenna with reduced inductance placed within the plasma producing chamber to form silicon dots on a substrate S disposed within the chamber in the presence of the inductively coupled plasma. Conditions for a pretreatment of the substrate prior to the formation of silicon dots, the temperature of the substrate in forming silicon dots and the gas pressure in the plasma producing chamber during the formation of silicon dots are controlled depending on the particle diameter of the silicon dots.

Abstract: A silicon object formation target substrate is arranged in a first chamber, a silicon sputter target is arranged in a second chamber communicated with the first chamber, plasma for chemical sputtering is formed from a hydrogen gas in the second chamber, chemical sputtering is effected on the silicon sputter target with the plasma thus formed, producing particles contributing to formation of silicon object, whereby a silicon object is formed, on the substrate, from the particles moved from the second chamber to the first chamber.

Abstract: A silicon sputter target is arranged in a silicon dot forming chamber, and a silicon dot formation target substrate is arranged in the chamber. Plasma is formed from a sputtering gas (typically a hydrogen gas) supplied into the chamber, and chemical sputtering is effected on the target with the plasma thus formed to form silicon dots on the substrate S. Optionally, with the plasma formed from a hydrogen gas and a silane-containing gas at a plasma emission intensity ratio (Si(288 nm)/H?) of 10.0 or lower, the silicon dots are formed on the substrate S. The silicon dots are terminally treated with the plasma derived from a terminally treating gas such as an oxygen gas.

Abstract: A substrate having silicon dots wherein at least one insulating layer and at least one group of silicon dots are formed on a substrate selected from a non-alkali glass substrate and a substrate made of a polymer material.

Abstract: A substrate is accommodated in a vacuum chamber provided with a silicon sputter target, a sputtering gas (typically a hydrogen gas) is supplied into the vacuum chamber, a high-frequency power is applied to the gas to form plasma in the chamber, a bias voltage is applied to the target for control of chemical sputtering, and the chemical sputtering is effected on the target by the plasma to form silicon dots on the substrate.

Abstract: There are provided a method and an apparatus which form silicon dots having substantially uniform particle diameters and exhibiting a substantially uniform density distribution directly on a substrate at a low temperature. A hydrogen gas (or a hydrogen gas and a silane-containing gas) is supplied into a vacuum chamber (1) provided with a silicon sputter target (e.g., target 30), or the hydrogen gas and the silane-containing gas are supplied into the chamber (1) without arranging the silicon sputter target therein, a high-frequency power is applied to the gas(es) so that plasma is generated such that a ratio (Si(288 nm)/H?) between an emission intensity Si(288 nm) of silicon atoms at a wavelength of 288 nm and an emission intensity H? of hydrogen atoms at a wavelength of 484 nm in plasma emission is 10.0 or lower, and preferably 3.0 or lower, or 0.

Abstract: A silicon film forming apparatus includes a deposition chamber (10), a silicon sputter target (2) arranged in the chamber, a hydrogen gas supply circuit (102 or 102?) supplying a hydrogen gas into the chamber, and a high-frequency power applying device (antenna 1, 1?, power source PW and others) generating inductively coupled plasma by applying high-frequency power to the gas supplied into the deposition chamber (10). Chemical sputtering is effected on the target (2) by the plasma to form a silicon film on a substrate S. A silane gas may be used. A silane gas supply circuit (101) may be provided with a gas reservoir unit (GR). The silicon film can be formed inexpensively and fast at a relatively low temperature.

Abstract: A hydrogen gas is supplied into a deposition chamber (10) accommodating a silicon sputter target (2) and a deposition target substrate (S), a high-frequency power is applied to the gas to generate plasma exhibiting H?/SiH* from 0.3 to 1.3 in the deposition chamber, and chemical sputtering is effected on the silicon sputter target (2) by the plasma to form a crystalline silicon thin film on the substrate (2). A crystalline silicon thin film of a good quality can be formed inexpensively and safely at a relatively low temperature.